射頻高效率功率放大器設(shè)計(jì)
發(fā)布時(shí)間:2018-04-13 03:26
本文選題:高效率 + E類放大器; 參考:《電子科技大學(xué)》2017年碩士論文
【摘要】:近年來,由于通信系統(tǒng)的發(fā)展,對(duì)發(fā)射機(jī)中功率放大器的各項(xiàng)指標(biāo)要求越來越高,設(shè)計(jì)出高效率、小型化、低成本和寬帶的功率放大器對(duì)通信系統(tǒng)有重要意義,其次隨著第三代半導(dǎo)體技術(shù)的發(fā)展,也為設(shè)計(jì)出高功率高效率的放大器奠定了基礎(chǔ)。本文主要研究設(shè)計(jì)高效率和寬帶放大器,具體工作總結(jié)如下:本文先具體地介紹了功率放大器的各項(xiàng)指標(biāo)和分類,以及功率放大器設(shè)計(jì)的一般流程。其中F類放大器作為諧波控制類放大器,相比其他高效率放大器有諸多優(yōu)勢(shì)且設(shè)計(jì)簡(jiǎn)便,因此先具體分析了F類功放的傳統(tǒng)結(jié)構(gòu)及其與實(shí)際設(shè)計(jì)的差異,進(jìn)而對(duì)傳統(tǒng)F類功放稍加改進(jìn),并基于此設(shè)計(jì)了一款2.14GHz的高效率F類放大器,通過ADS原理圖仿真得出在輸入功率28dBm時(shí),PAE高達(dá)83%,輸出功率40.1dBm,并經(jīng)加工測(cè)試PAE最高為77.1%,漏級(jí)效率最高為81.9%。驗(yàn)證了改進(jìn)設(shè)計(jì)的可行性。介紹傳統(tǒng)的E類功率放大器傳統(tǒng)結(jié)構(gòu),使用GaN晶體管設(shè)計(jì)了一款2.1GHz的高效率E類放大器,其中輸出匹配網(wǎng)絡(luò)在E類功放傳統(tǒng)結(jié)構(gòu)基礎(chǔ)上增加了諧波控制電路,而輸入匹配網(wǎng)絡(luò)基于源牽引設(shè)計(jì)。測(cè)試結(jié)果顯示在輸入功率為26dBm時(shí),PAE最大為76.28%,此時(shí)輸出功率為38.8dBm。介紹了幾種寬帶匹配方法,其中的切比雪夫低通濾波器匹配法雖然計(jì)算較為繁瑣,但是設(shè)計(jì)相對(duì)簡(jiǎn)單方便,因此使用切比雪夫低通濾波器匹配法設(shè)計(jì)了一款工作在0.7-2.3GHz寬帶放大器,仿真結(jié)果顯示當(dāng)輸入功率28dBm,漏級(jí)電壓28V,柵極電壓-2.7V時(shí),在帶寬0.8-2.3GHZ內(nèi)PAE64%,輸出功率大于40dBm。在功放的實(shí)際設(shè)計(jì)中,為了減小最后實(shí)測(cè)和仿真的差距,本文十分注重原理圖仿真和版圖仿真的結(jié)合,并在電磁聯(lián)合仿真時(shí)考慮實(shí)際直流潰電線以及接地孔的影響,最大化地減小仿真結(jié)果與實(shí)際測(cè)試的誤差,實(shí)際測(cè)試也證明這種方案的可行性。
[Abstract]:In recent years, due to the development of the communication system, the request of the transmitter power amplifier is more and more high, to design a high efficiency, miniaturization, low cost and broadband power amplifier is important for the communication system, then with the development of the third generation of semiconductor technology, but also laid the foundation for the design of high efficiency power amplifier this paper mainly studies design of high efficiency and wide band amplifier, the specific work are summarized as follows: This paper first introduces in detail the indicators and classification of power amplifier, power amplifier and the general design process. The class F amplifier as harmonic control amplifier, amplifier has many advantages compared to other high efficiency and simple design, so the first detailed analysis of the the traditional structure of class F power amplifier and the difference between actual design, then the traditional class F power amplifier is improved, and based on the design of a 2 .14GHz high efficiency class F amplifier, the input power of 28dBm through the ADS simulation principle diagram, PAE up to 83%, the output power of 40.1dBm, and processed by testing PAE up to 77.1%, the drain efficiency was up to 81.9%. to verify the feasibility of improving the design. The class E power amplifier on the traditional traditional structure, high efficiency a class E amplifier is used to design the 2.1GHz GaN transistor, the output matching network in the traditional class E power amplifier structure based on the increase of harmonic control circuit, and the input source design based on traction matching network. Test results show that when the input power is 26dBm, the maximum is 76.28% PAE, the output power of 38.8dBm. is introduced, and several methods broadband Chebyshev low-pass filter which, although the law is complicated in calculation, but the design is relatively simple and convenient, so the use of Chebyshev low-pass filter, a method of design Working in 0.7-2.3GHz broadband amplifier, the simulation results show that when the input power is 28dBm, the drain voltage 28V, gate voltage of -2.7V, PAE64% in 0.8-2.3GHZ bandwidth, the output power is more than 40dBm. in the actual design of the power amplifier, in order to reduce the gap between the measured and simulated at last, this paper emphasizes on combination principle diagram simulation and layout simulation, and consider the actual current collapse effect of ground wire and the hole in the joint simulation of electromagnetic, minimizing error simulation results and actual test, the actual test also proved the feasibility of this scheme.
【學(xué)位授予單位】:電子科技大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2017
【分類號(hào)】:TN722.75
【參考文獻(xiàn)】
相關(guān)碩士學(xué)位論文 前4條
1 謝樹義;高效率與寬帶功率放大器研制[D];電子科技大學(xué);2013年
2 雷奇;射頻功率放大器中效率提升技術(shù)的研究[D];電子科技大學(xué);2012年
3 李彥伯;E類高效率功率放大器設(shè)計(jì)及實(shí)現(xiàn)[D];電子科技大學(xué);2011年
4 牛吉凌;高效率Doherty功率放大器的研制[D];電子科技大學(xué);2009年
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