發(fā)布時(shí)間：2018-04-10 10:58

  本文選題：IPM + IGBT��；參考：《西安理工大學(xué)》2017年碩士論文

【摘要】：作為電力電子行業(yè)的核心處理單元,功率器件在國(guó)民經(jīng)濟(jì)和生活中扮演著至關(guān)重要的角色。在當(dāng)今多種功率器件當(dāng)中,由于IGBT (Insulated Gate Bipolar Transistor)所具有的性能優(yōu)勢(shì),其應(yīng)用幾乎涵蓋了從幾十瓦到幾兆瓦的功率范圍,成為當(dāng)今電力電子技術(shù)應(yīng)用的核心器件。IPM (Intelligent Power Module)作為IGBT進(jìn)一步發(fā)展的產(chǎn)物,將驅(qū)動(dòng)保護(hù)電路與IGBT芯片等進(jìn)行了集成,減小了體積、重量以及寄生參數(shù)的影響,提高了集成度和可靠性,是未來(lái)電力電子功率器件的重要發(fā)展方向。本文在詳細(xì)分析IGBT工作過(guò)程的基礎(chǔ)上,針對(duì)IPM中IGBT驅(qū)動(dòng)保護(hù)電路的特點(diǎn),設(shè)計(jì)了大功率IPM驅(qū)動(dòng)保護(hù)集成電路,主要包括驅(qū)動(dòng)模塊,保護(hù)模塊以及輔助功能模塊。驅(qū)動(dòng)模塊內(nèi)針對(duì)IGBT的開關(guān)過(guò)程的特點(diǎn),設(shè)計(jì)了三種驅(qū)動(dòng)方式,可通過(guò)端口靈活配置;保護(hù)模塊內(nèi)包含了 VCE退飽和檢測(cè),基于寄生電感LeE的di/dt檢測(cè),以及針對(duì)IPM模塊特點(diǎn)的分流器檢測(cè)方式,在檢測(cè)到故障發(fā)生后對(duì)IGBT實(shí)施軟關(guān)斷。為了保證驅(qū)動(dòng)保護(hù)電路的正常運(yùn)行,本文還設(shè)計(jì)了輔助功能模塊,輔助功能模塊內(nèi)包含了LDO,振蕩器等電路。驅(qū)動(dòng)保護(hù)集成電路既可適用于大功率IPM模塊也可適用于一般IGBT模塊。該驅(qū)動(dòng)保護(hù)電路基于CSMC 0.25μm BCD工藝設(shè)計(jì),經(jīng)過(guò)Candence spectre軟件仿真驗(yàn)證,顯示該驅(qū)動(dòng)保護(hù)電路具有良好的驅(qū)動(dòng)功能及可靠的保護(hù)效果。
[Abstract]:As the core processing unit of power electronics industry, power devices play an important role in national economy and daily life.In today's power devices, due to the performance advantages of IGBT Insulated Gate Bipolar Transistor, its applications almost cover the power range from tens of watts to several megawatts.As the product of the further development of IGBT, the driver protection circuit is integrated with the IGBT chip, which reduces the influence of volume, weight and parasitic parameters.Improving the integration and reliability is an important development direction of power electronic power devices in the future.Based on the detailed analysis of the working process of IGBT and the characteristics of the IGBT driver and protection circuit in IPM, this paper designs a high-power IPM driver protection IC, which mainly includes the driver module, the protection module and the auxiliary function module.According to the characteristics of IGBT switch process, three driving modes are designed in the driver module, which can be configured flexibly through ports. The protection module includes VCE desaturation detection and di/dt detection based on parasitic inductor LeE.According to the characteristics of IPM module, the shunt detection method is used to turn off the IGBT after the fault is detected.In order to ensure the normal operation of the driver protection circuit, the auxiliary function module is designed, which includes LDO, oscillator and so on.The drive protection integrated circuit can be used not only in high power IPM module but also in general IGBT module.The driver protection circuit is based on CSMC 0.25 渭 m BCD process design. The simulation of Candence spectre software shows that the driver protection circuit has good driving function and reliable protection effect.
【學(xué)位授予單位】：西安理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN322.8

【參考文獻(xiàn)】

相關(guān)期刊論文 前7條

1 趙雙;劉云濤;;恒跨導(dǎo)軌對(duì)軌CMOS運(yùn)算放大器的設(shè)計(jì)[J];微電子學(xué);2016年03期

2 劉海紅;楊媛;劉海鋒;;大功率IGBT驅(qū)動(dòng)保護(hù)方法研究進(jìn)展綜述[J];電子設(shè)計(jì)工程;2015年07期

3 柳舟洲;同向前;;大功率IGBT短路保護(hù)機(jī)理的分析[J];電氣傳動(dòng);2015年03期

4 馬晉;王富珍;王彩琳;;IGBT失效機(jī)理與特征分析[J];電力電子技術(shù);2014年03期

5 陳崴;施隆照;;一種基于CMOS工藝的高精度片內(nèi)振蕩器的設(shè)計(jì)[J];中國(guó)集成電路;2011年11期

6 高鵬;蔡世俊;常昌遠(yuǎn);;基于電平檢測(cè)的上電復(fù)位電路[J];電子器件;2006年04期

7 郭鵬;沈相國(guó);;LDO的三種頻率補(bǔ)償方案實(shí)現(xiàn)[J];電子器件;2006年03期

相關(guān)碩士學(xué)位論文 前1條

1 吳了;帶LDO模式的Buck型DC/DC變換器研究與設(shè)計(jì)[D];湖南大學(xué);2010年

，

本文編號(hào)：1730911