本文選題：SM-JTE　切入點(diǎn)：H-Si　出處：《微電子學(xué)》2017年04期

【摘要】：介紹了高壓空間調(diào)制結(jié)終端擴(kuò)展(SM-JTE)結(jié)構(gòu)及其優(yōu)勢(shì)。結(jié)合實(shí)際的MOSFET工藝和已有的理論模型,定義了全新的4H-Si C器件TCAD仿真模型參數(shù)。首次提出了確定SM-JTE最優(yōu)長(zhǎng)度的方法�；赟M-JTE結(jié)構(gòu)的4H-Si C器件具有優(yōu)良的擊穿特性。SM-JTE結(jié)構(gòu)的長(zhǎng)度為230μm時(shí),SM-JTE的擊穿電壓可以達(dá)到16 k V。針對(duì)界面電荷對(duì)擊穿特性的影響進(jìn)行了系統(tǒng)仿真研究。仿真結(jié)果表明,正界面電荷相比負(fù)界面電荷對(duì)擊穿電壓的影響更大,且界面態(tài)電荷會(huì)引起擊穿電壓明顯下降。該SM-JTE結(jié)構(gòu)可以采用更短的結(jié)終端,在同樣尺寸的芯片上能制作更多的器件,從而提高生產(chǎn)效率,降低器件成本。
[Abstract]:This paper introduces the structure and advantages of SM-JTE (high voltage spatial modulation junction terminal).Combined with the actual MOSFET process and the existing theoretical model, a new TCAD simulation model parameter of 4H-Si C device is defined.A method for determining the optimal length of SM-JTE is proposed for the first time.The breakdown voltage of SM-JTE based on SM-JTE structure is 16 kV when the length of SM-JTE is 230 渭 m.The influence of interface charge on breakdown characteristics is studied by simulation.The simulation results show that the positive interface charge has more influence on the breakdown voltage than the negative interface charge, and the interface state charge will cause the breakdown voltage to decrease obviously.The SM-JTE structure can use shorter junction terminals, and can make more devices on the same size chip, thus improving the production efficiency and reducing the device cost.
【作者單位】： 南京電子器件研究所寬禁帶功率半導(dǎo)體器件國(guó)家重點(diǎn)實(shí)驗(yàn)室;
【分類號(hào)】：TN386
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本文編號(hào)：1725351