本文選題：離子注入　切入點(diǎn)：飛秒激光　出處：《電子科技大學(xué)》2017年碩士論文

【摘要】：受限于單晶硅的禁帶寬度,傳統(tǒng)的硅基探測(cè)器不能滿足近紅外波段的探測(cè)需求,近年來(lái),國(guó)內(nèi)外學(xué)者進(jìn)行了大量的研究和嘗試來(lái)提高硅基器件的性能。1998年,在SF6氣氛下采用飛秒激光輻照法制備的硫族元素超摻雜硅在可見-近紅外波段的光吸收率高達(dá)90%,這一材料的出現(xiàn)受到了廣泛關(guān)注和深入研究,目前該材料可用于硅基器件的制備來(lái)提高器件的性能,如太陽(yáng)能電池、光電探測(cè)器等。在高能脈沖激光輻照下,單晶硅表面會(huì)發(fā)生快速融化和再凝固,利用SF6氣氛摻雜在高能量情況下超過(guò)了硫元素在硅中的固溶度。摻雜的硫元素在硅的禁帶中引入了雜質(zhì)能帶,相當(dāng)于變相使禁帶變窄,從而使材料可以吸收近紅外波段的光。此外,激光燒蝕使得硅表面重構(gòu)并產(chǎn)生了一系列的尖錐陣列,樣品表面尖錐高度為微米數(shù)量級(jí),當(dāng)光輻照到材料表面,會(huì)在尖錐中多次反射,使得材料對(duì)可見光的吸收也有顯著的提高。雖然在SF6氣氛下采用飛秒激光制備的重?fù)诫s硅在可見-近紅外波段有很高的吸收,但是由于表面尖錐陣列高度較高,對(duì)器件制備造成了一定的障礙。離子注入輔以飛秒激光的工藝很好地解決了這個(gè)問題,先通過(guò)離子注入將硫元素?fù)诫s到單晶硅表面,再使用較低的脈沖能量和脈沖數(shù)目的激光掃描硅片,在激活雜質(zhì)電學(xué)特性的同時(shí),使得硅材料表面尖錐在數(shù)微米甚至納米量級(jí)。用該方法制備的重?fù)诫s硅材料對(duì)可見光的吸收率仍有90%,對(duì)近紅外波段的光的吸收率則下降到60%,但仍大幅度高于普通單晶硅。通過(guò)對(duì)比不同離子注入濃度下制備的重?fù)诫s硅在可見-近紅外波段的吸收率,分析材料的吸收率和摻雜濃度的關(guān)系。通過(guò)霍爾測(cè)試表征材料的電學(xué)性能,摻雜濃度最高時(shí),載流子面密度接近1015cm-2,但載流子遷移率則隨摻雜濃度升高而降低到77cm2v-1s-1,這主要是由超高的摻雜濃度所引起。將重?fù)诫s硅材料制成N+/P光電二極管,測(cè)試器件的伏安特性曲線和光電響應(yīng)。分析不同離子注入劑量對(duì)探測(cè)器響應(yīng)度的影響,摻雜劑量低的材料雖然吸收率相對(duì)較低,但由于較高的載流子遷移率,在可見-近紅外波段仍擁有更高的響應(yīng)度。飛秒激光結(jié)合離子注入的工藝提供了一種制備低成本、寬光譜響應(yīng)近紅外硅基探測(cè)器的方法,利用該方法制備的新型光電探測(cè)器件的優(yōu)異性能使其在硅基近紅外光電探測(cè)器領(lǐng)域有著巨大的應(yīng)用潛力。
[Abstract]:The band gap is limited to single crystal silicon, silicon photodetector tradition can not meet the need of the detection, near infrared band in recent years, domestic and foreign scholars have conducted research and try a lot to improve the performance of silicon.1998, using sulfur prepared by femtosecond laser irradiation in SF6 atmosphere in the visible and ultra doped silicon infrared light absorption rate as high as 90%, this material has attracted extensive attention and in-depth research, the material can be used for the preparation of silicon based devices to improve the performance of the device, such as a solar battery, photoelectric detector etc. in high-energy pulsed laser irradiation, the silicon surface will happen quickly melted and re in the case of solidification, high energy exceeds the solid solubility of elemental sulfur in silicon by SF6 doping. The sulfur doped atmosphere in the silicon band gap introduced impurity band, which is equivalent to disguise so that the band gap narrowing. The material can absorb infrared light. In addition, the laser ablation of silicon surface reconstruction and array produced a series of sample surface, tip height reaches a micrometer level when light irradiation to the material surface, will be reflected many times in the cone, the material of the absorption of visible light is also significantly improved. Although the use of heavily doped silicon fabricated by femtosecond laser pulses in SF6 atmosphere with high absorption in the visible and near-infrared bands, but due to the surface array high for device fabrication caused some obstacles. By femtosecond laser technology is a good solution to this problem by ion implantation, ion implantation of sulfur doping to the silicon surface, laser scanning wafer using low pulse energy and pulse number, the impurities on the electrical characteristics of activated at the same time, the tip of silicon surface in several micron or even nanometer. Heavily doped silicon material prepared by using the method of visible light absorption rate is 90%, the absorption rate of infrared light is decreased to 60%, but still significantly higher than ordinary monocrystalline silicon. Heavily doped silicon concentration prepared in the visible and near infrared absorption rate by comparing different ion implantation the relationship between absorption rate, analysis of materials and doping concentration. Through the measurements of the electrical properties of materials characterization of Holzer, the highest doping concentration, the carrier density is close to 1015cm-2, but the carrier mobility increases with doping concentration was increased to 77cm2v-1s-1, which is mainly caused by the high doping concentration of heavily doped silicon material. N+/P photodiode, volt ampere characteristic curve and photoelectric test device. Response analysis of different ion implantation dose effect on the sensitivity of the detector, doping dose low material while the absorption rate is relatively low, but due to the high The carrier mobility in the visible and near-infrared bands still have higher responsivity. Femtosecond laser technology combined with ion implantation for preparing low cost provides a method of near infrared silicon detector with wide spectral response, excellent photoelectric model prepared by the method of the detection device can be a the huge potential of application in the field of silicon based near infrared photodetector.

【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN215

【參考文獻(xiàn)】

相關(guān)期刊論文 前2條

1 門海寧;程光華;孫傳東;;飛秒激光作用下的硅表面微結(jié)構(gòu)及發(fā)光特性[J];強(qiáng)激光與粒子束;2006年07期

2 趙明,蘇衛(wèi)鋒,趙利;表面微構(gòu)造的硅材料——一種新型的光電功能材料[J];物理;2003年07期

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本文編號(hào)：1723775