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可防誤翻轉(zhuǎn)高精度欠壓鎖存電路設(shè)計(jì)

發(fā)布時(shí)間:2018-04-05 04:00

  本文選題:欠壓鎖存 切入點(diǎn):防誤翻轉(zhuǎn) 出處:《中南大學(xué)學(xué)報(bào)(自然科學(xué)版)》2017年09期


【摘要】:在分析傳統(tǒng)欠壓鎖存電路(UVLO:Under voltage lockout)工作原理的基礎(chǔ)上,利用VIS 0.4μm BCD工藝設(shè)計(jì)一種具有防誤翻轉(zhuǎn)功能的高精度欠壓鎖存電路。該電路由3部分組成,以帶隙比較器為核心,引入具有遲滯特性的防誤翻轉(zhuǎn)電路以保證欠壓鎖存信號(hào)能安全可靠地輸出,并通過(guò)調(diào)整帶隙基準(zhǔn)的溫度特性保證欠壓鎖存閾值精度,最后經(jīng)過(guò)放大輸出電路放大后,輸出穩(wěn)定的欠壓鎖存信號(hào)。采用Cadence軟件對(duì)所設(shè)計(jì)的電路進(jìn)行仿真。研究結(jié)果表明:在-40~125℃范圍內(nèi)欠壓鎖存閾值偏差最大為100 m V,閾值分辨率可達(dá)10-5 V,在3~5 V工作電壓下,防誤翻轉(zhuǎn)電路開(kāi)啟閾值為2.95 V,能有效防止欠壓鎖存電路誤翻轉(zhuǎn)。該電路的設(shè)計(jì)理念和仿真結(jié)果有助于后期電源芯片的開(kāi)發(fā)。
[Abstract]:Based on the analysis of the working principle of the traditional UVLOO: under voltage lockout circuit, a high precision UVLOO: under voltage lockout circuit is designed by using the VIS 0.4 渭 m BCD process.The circuit is composed of three parts, with the band gap comparator as the core, the anti-error flip circuit with hysteresis characteristics is introduced to ensure the safe and reliable output of the under-voltage latch signal.By adjusting the temperature characteristics of the bandgap reference, the accuracy of the under-voltage latch threshold is ensured, and a stable under-voltage latch signal is output after the amplification of the output circuit.The designed circuit is simulated by Cadence software.The results show that the maximum threshold deviation of under-voltage latch is 100 MV and the threshold resolution can reach 10-5 V in the range of -40 鈩,

本文編號(hào):1713077

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