本文選題：開關(guān)混頻器　切入點(diǎn)：變壓器巴倫　出處：《電子科技大學(xué)》2015年碩士論文

【摘要】：隨著無線通信技術(shù)的發(fā)展和普及,無線通信的應(yīng)用已經(jīng)遍布各個(gè)領(lǐng)域。但人們對(duì)傳輸速率的需求不斷提升,傳統(tǒng)的無線通信頻段(5GHz以下)已經(jīng)相當(dāng)擁擠,而且較窄的相對(duì)帶寬,決定了低頻射頻很難用來開發(fā)超高速無線通信。這催促人們向更廣的電磁波頻段進(jìn)行探索。毫米波通信利用毫米波頻段蘊(yùn)涵的豐富頻譜資源來實(shí)現(xiàn)超高速無線通信,成為時(shí)下研究熱點(diǎn)之一。另外,毫米波在雷達(dá)、成像、醫(yī)療、天文、安檢等領(lǐng)域都有著廣泛的應(yīng)用前景。同時(shí),硅基CMOS工藝技術(shù)的日趨成熟,為能大幅降低成本取代III-V族工藝的毫米波器件提供了可能。因此,設(shè)計(jì)出高性能的硅基CMOS毫米波電路有著十分重大的探索意義和實(shí)際意義。作為毫米波收發(fā)系統(tǒng),實(shí)現(xiàn)基本的通訊功能需要將基帶信號(hào)調(diào)制到射頻載波信號(hào)發(fā)射出去或接收到并解調(diào)。而混頻器正是毫米波收發(fā)機(jī)用來調(diào)制解調(diào)的重要模塊,它處在接收機(jī)靠前的位置決定其噪聲對(duì)系統(tǒng)有較大影響,其轉(zhuǎn)換增益能抑制后級(jí)噪聲并提供增益,其線性度可能限制整機(jī)的動(dòng)態(tài)范圍。本文對(duì)硅基CMOS毫米波混頻器設(shè)計(jì)方法進(jìn)行了系統(tǒng)的研究并給出一種基于45GHz的高性能CMOS開關(guān)混頻器的設(shè)計(jì)方案。首先,本文對(duì)CMOS毫米波混頻器基本原理、性能指標(biāo)、混頻器分類以及片上無源器件進(jìn)行了詳盡分析,進(jìn)而對(duì)目前主流的硅基CMOS開關(guān)混頻器結(jié)構(gòu)進(jìn)行了介紹和分析。在必要的推導(dǎo)后,本文總結(jié)了提高開關(guān)混頻器性能的方法以及各性能參數(shù)之間的制約關(guān)系,為有源平衡式開關(guān)混頻器的設(shè)計(jì)提供了有效的指導(dǎo)。然后,文章對(duì)毫米波片上變壓器巴倫建模和設(shè)計(jì)方法進(jìn)行了總結(jié)。分析了利用變壓器巴倫進(jìn)行阻抗變換并做輸入匹配時(shí)需要注意的規(guī)則。對(duì)匹配過程中金絲的影響進(jìn)行了去嵌入研究,并提出了由于電路客觀原因制約而無法完美匹配時(shí)的最佳折衷方法。為在混頻器中遇到的常見匹配問題提供了一種有效的解決途徑。最后,基于臺(tái)積電的90nm硅基CMOS工藝,運(yùn)用電流注入、電感內(nèi)匹配、以及跨導(dǎo)放大器等技術(shù),設(shè)計(jì)了一款工作于45GHz的雙平衡開關(guān)混頻器。在1.2V驅(qū)動(dòng)電壓下實(shí)現(xiàn)了轉(zhuǎn)換增益10.5~13.5dB,噪聲系數(shù)8.6~9.2dB,輸入1dB壓縮點(diǎn)-12.5dBm,功耗9.5m W。該設(shè)計(jì)為45GHz接收機(jī)系統(tǒng)提供頻率變換并表現(xiàn)出優(yōu)秀的性能指標(biāo)。
[Abstract]:With the development and popularization of wireless communication technology, the application of wireless communication has spread all over the field.This prompts people to explore a wider spectrum of electromagnetic waves.Millimeter wave (MMW) communication has become one of the hotspots in the research field, which uses the rich spectrum resources of millimeter wave band to realize ultra-high speed wireless communication.In addition, millimeter wave has a wide range of applications in radar, imaging, medical, astronomy, security and other fields.At the same time, the maturity of silicon based CMOS technology makes it possible for millimeter wave devices which can greatly reduce the cost to replace the III-V family process.Therefore, the design of high performance silicon-based CMOS millimeter wave circuit is of great significance and practical significance.As a millimeter-wave transceiver system, the basic communication function needs to modulate the baseband signal to radio-frequency carrier signal to transmit or receive and demodulate.The mixer is an important module used by millimeter-wave transceiver to modulate and demodulate. Its position at the front of the receiver determines that its noise has a great influence on the system, and its conversion gain can suppress the post-stage noise and provide the gain.Its linearity may limit the dynamic range of the whole machine.In this paper, the design method of silicon-based CMOS millimeter wave mixer is systematically studied and a design scheme of high performance CMOS switching mixer based on 45GHz is presented.Firstly, the basic principle of CMOS millimeter wave mixer, performance index, mixer classification and passive devices on chip are analyzed in detail, and then the structure of the current mainstream silicon-based CMOS switch mixer is introduced and analyzed.After the necessary derivation, this paper summarizes the methods to improve the performance of the switched mixer and the constraints between the performance parameters, which provides an effective guide for the design of the active balance switch mixer.Then, the paper summarizes the modeling and design method of transformer on millimeter wave wafer.The rules that should be paid attention to when using transformer Barron to perform impedance transformation and input matching are analyzed.In this paper, the influence of gold wire in matching process is studied, and the best compromise method is put forward when the circuit can not match perfectly because of the objective reason of the circuit.It provides an effective way to solve the common matching problems encountered in mixers.Finally, based on the 90nm silicon based CMOS technology of TSMC, a double balance switch mixer working in 45GHz is designed by using the techniques of current injection, inductor internal matching and transconductance amplifier.At 1.2V driving voltage, the conversion gain of 10.5dB and noise coefficient of 8.6dBand 9.2dBwere realized. The input 1dB compression point was -12.5dBm. the power consumption was 9.5m W.This design provides frequency conversion for 45GHz receiver system and shows excellent performance index.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN773
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本文編號(hào)：1705388