X波段FET混頻器的研究
發(fā)布時(shí)間:2018-04-03 05:13
本文選題:X波段 切入點(diǎn):漏極混頻器 出處:《電子科技大學(xué)》2015年碩士論文
【摘要】:X波段混頻器是無(wú)線通信收發(fā)機(jī)的重要部件之一,它在空間研究、廣播衛(wèi)星、固定通訊業(yè)務(wù)衛(wèi)星、地球探測(cè)衛(wèi)星、氣象衛(wèi)星等領(lǐng)域有著廣泛地應(yīng)用。然而,混頻器的鏡頻抑制度、變頻損耗、隔離度和噪聲等參數(shù)的好壞將直接影響接收系統(tǒng)的性能。因此,研究X波段FET混頻器有著非常重要的意義。本文主要采用多種微帶平面電路器件,對(duì)兩種X波段混頻器,即漏極混頻器和自激振蕩混頻器進(jìn)行了研究。首先,本文對(duì)漏極混頻器進(jìn)行了研究,通過(guò)相關(guān)的理論分析,提出了漏極混頻器的設(shè)計(jì)方案。根據(jù)設(shè)計(jì)方案,本文分別設(shè)計(jì)了單管FET漏極混頻器,以獲得較低的變頻損耗;寬阻帶低通濾波器,很好地抑制混頻器的諧波,降低變頻損耗;平行耦合帶通濾波器,回收射頻信號(hào),阻隔中頻信號(hào),減少不必要的能量損耗;直流偏執(zhí)電路,保護(hù)直流信號(hào)源,減少射頻和中頻信號(hào)的泄漏。各電路器件采用HFSS和ADS進(jìn)行了仿真,完成了加工測(cè)試。之后,對(duì)整體電路進(jìn)行了仿真和加工測(cè)試。測(cè)試結(jié)果表明,在12.8GH z~13.2GHz頻率范圍內(nèi),變頻損耗小于5dB;在射頻信號(hào)為13.1GHz,輸入功率為-20dBm,柵極電壓為0V,漏極電壓為3V情況下,最優(yōu)本振功率達(dá)到了13dBm。其次,本文對(duì)自激振蕩混頻器進(jìn)行了理論分析,研究方案的設(shè)計(jì),采用HFSS和ADS軟件對(duì)SIW諧振腔、開(kāi)路短截線低通濾波器和X波段振蕩器等電路模塊進(jìn)行了仿真。之后,將各個(gè)模塊組合起來(lái)進(jìn)行聯(lián)合仿真,并對(duì)仿真結(jié)果進(jìn)行了加工和測(cè)試。測(cè)試結(jié)果表明,在射頻信號(hào)為10.8GHz~11.2GHz,輸入功率為5dBm,柵極電壓為0V,漏極電壓為3V情況下,產(chǎn)生的振蕩頻率為10GHz,變頻損耗小于8dB。該電路具有結(jié)構(gòu)緊湊,性能良好,測(cè)試方便等優(yōu)點(diǎn)。從研制的上述兩種混頻器測(cè)試結(jié)果來(lái)看,測(cè)試的主要性能參數(shù)與仿真吻合較好,從而驗(yàn)證了本文研究方案的合理性和理論分析的正確性。
[Abstract]:X-band mixer is one of the important components of wireless transceiver. It is widely used in space research, broadcast satellite, fixed communication service satellite, earth exploration satellite, meteorological satellite and so on.However, the performance of the receiver will be directly affected by the mirror frequency rejection, frequency conversion loss, isolation and noise of the mixer.Therefore, it is very important to study X-band FET mixers.In this paper, two kinds of X band mixers, namely drain mixer and self excited oscillation mixer, are studied by using several kinds of microstrip planar circuit devices.First of all, the drain mixer is studied in this paper, and the design scheme of the drain mixer is put forward by theoretical analysis.According to the design scheme, this paper designs a single-transistor FET drain mixer to obtain lower frequency conversion loss, wide stopband low pass filter, good suppression of harmonic and frequency conversion loss, parallel coupling bandpass filter,Recovering RF signal, blocking intermediate frequency signal, reducing unnecessary energy loss, DC paranoid circuit, protecting DC signal source, reducing leakage of RF and if signal.Each circuit device is simulated by HFSS and ADS, and the machining test is completed.After that, the whole circuit is simulated and processed.The test results show that in the frequency range of 12.8GH z~13.2GHz, the frequency conversion loss is less than 5 dB, the optimal local oscillator power is 13 dB m when the RF signal is 13.1 GHz, the input power is -20 dBm, the gate voltage is 0 V, and the drain voltage is 3 V.Secondly, the self-excited oscillation mixer is theoretically analyzed, and the design of the scheme is studied. The circuit modules of SIW resonator, open-circuit short-cut low-pass filter and X-band oscillator are simulated by HFSS and ADS software.After that, the modules are combined for joint simulation, and the simulation results are processed and tested.The test results show that when the RF signal is 10.8GHz (11.2GHz), the input power is 5dBm, the gate voltage is 0V, and the drain voltage is 3V, the oscillation frequency is 10GHz and the frequency conversion loss is less than 8dB.The circuit has the advantages of compact structure, good performance and convenient test.From the test results of the two kinds of mixers mentioned above, the main performance parameters are in good agreement with the simulation, which verifies the rationality of the research scheme and the correctness of the theoretical analysis.
【學(xué)位授予單位】:電子科技大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2015
【分類號(hào)】:TN773
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