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  本文選題：Ka波段　切入點：氮化鎵高電子遷移率晶體管　出處：《北京理工大學》2016年碩士論文

【摘要】：氮化鎵(GaN)寬禁帶半導體作為第三代半導體材料,具有高熱導率、高擊穿電壓、高電子漂移率、耐高溫、耐高壓等優(yōu)勢,特別適合應用在毫米波數(shù)字雷達系統(tǒng)中。T/R組件是雷達系統(tǒng)的核心部件,其性能的優(yōu)劣直接影響雷達系統(tǒng)的發(fā)展,基于實驗室項目中已經(jīng)設計出的基于GaN HEMT單片微波集成功率放大器,為了設計出單片微波集成T/R組件,本論文擬討論基于GaN HEMT單片微波單刀雙擲開關的研究及設計。主要研究內(nèi)容如下。本論文首先分析了設計所采用的有源器件GaN HEMT的物理結構及其工作原理;分析了單片微波集成電路設計中常用的微帶線、電阻、電容等無源器件,利用HFSS進行建模與仿真,分析得到無源器件的物理尺寸與器件取值、品質(zhì)因數(shù)Q的關系。在以上研究的基礎上,完成了Ka波段GaN HEMT單片微波集成單刀雙擲開關的設計。主要通過ADS軟件進行了開關拓撲結構的設計,設計采用了并聯(lián)對稱結構提高了開關的隔離度,采用了并聯(lián)諧振電感降低了插入損耗,采用了阻抗匹配拓展了帶寬。其次進行了版圖拓撲結構的設計。最后,進行了版圖優(yōu)化、仿真和電磁場聯(lián)合仿真。經(jīng)過仿真優(yōu)化,結果顯示在30GHz~40GHz工作頻帶內(nèi),開關的插入損耗小于2dB,隔離度大于25dB,功率容量為7.94W,開關速度小于1ns,回波損耗大于22dB。
[Abstract]:As the third generation semiconductor material, gallium nitride (gan) wide band gap semiconductor has the advantages of high thermal conductivity, high breakdown voltage, high electron drift rate, high temperature resistance, high pressure resistance and so on.Especially suitable for application in millimeter-wave digital radar system. T / R module is the core component of radar system, and its performance directly affects the development of radar system.Based on the monolithic microwave integrated power amplifier based on GaN HEMT which has been designed in the laboratory project, in order to design the monolithic microwave integrated T / R module, this paper discusses the research and design of single-chip microwave single-pole double-throw switch based on GaN HEMT.The main research contents are as follows.In this paper, the physical structure and working principle of the active device GaN HEMT are analyzed, and the passive devices such as microstrip line, resistance, capacitance and so on in the design of monolithic microwave integrated circuit are analyzed, and the modeling and simulation are carried out by HFSS.The relationship between physical size of passive device and device value, quality factor Q is obtained.Based on the above research, the design of Ka-band GaN HEMT monolithic microwave integrated SPDT switch is completed.The topology of the switch is designed by ADS software. The parallel symmetrical structure is used to improve the isolation of the switch, the parallel resonant inductor is used to reduce the insertion loss, and the impedance matching is used to expand the bandwidth.Secondly, the layout topology is designed.Finally, layout optimization, simulation and electromagnetic field simulation are carried out.The simulation results show that the insertion loss of the switch is less than 2 dB, the isolation is more than 25 dB, the power capacity is 7.94 W, the switching speed is less than 1ns, and the echo loss is more than 22 dB in the operating band of 30GHz~40GHz.
【學位授予單位】：北京理工大學
【學位級別】：碩士
【學位授予年份】：2016
【分類號】：TN386

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