本文選題：GaN　切入點(diǎn)：HEMT　出處：《西安電子科技大學(xué)》2015年碩士論文

【摘要】：微波功率放大器作為微波射頻系統(tǒng)的核心部件在空間、雷達(dá)、基站等領(lǐng)域中有著十分廣泛的應(yīng)用。然而以Si為代表的第一代半導(dǎo)體材料和以GaAs為代表的第二代半導(dǎo)體材料制作的微波功率器件受到材料本身的限制并不能夠滿足在這些領(lǐng)域內(nèi)的應(yīng)用,作為第三代半導(dǎo)體材料的GaN材料具有寬達(dá)約3.4eV的禁帶寬度,利用其材料所制作的功率器件具備高擊穿電壓、高功率輸出密度、高頻工作、抗輻照等優(yōu)點(diǎn),因此GaN材料被認(rèn)為具有廣闊市場(chǎng)應(yīng)用前景。單片微波集成電路作為一種電路形式具有體積小、質(zhì)量輕、高可靠性等突出優(yōu)點(diǎn),所以單片形式的GaN微波功放集聚了各種優(yōu)點(diǎn),在軍事以及商業(yè)應(yīng)用上具有廣大的潛在市場(chǎng)。本文依托于實(shí)驗(yàn)室的工藝條件和技術(shù)積累,以GaN MMIC為目標(biāo)展開了以下幾個(gè)方面的研究:1.基于西安電子科技大學(xué)寬禁帶半導(dǎo)體材料與器件重點(diǎn)實(shí)驗(yàn)室成熟的AlGaN/GaN HEMT制作技術(shù),開發(fā)出與現(xiàn)有的GaN HEMT制作流程相兼容的GaN MMIC放大器制作流程。主要在原有的HEMT制作流程基礎(chǔ)之上,穿插了金屬-絕緣介質(zhì)-金屬電容、螺旋微帶線電感以及CrNi薄膜電阻的制作工序。2.針對(duì)實(shí)際測(cè)試數(shù)據(jù)建模的需要,提出了適合于實(shí)驗(yàn)室工藝條件和高頻應(yīng)用的TRL去嵌入方案,利用HFSS電磁仿真軟件設(shè)計(jì)了TRL去嵌入的結(jié)構(gòu)尺寸,并且繪制了TRL去嵌入的流片版圖。3.建立了MMIC電路設(shè)計(jì)中需要使用到的無源器件(MIM電容、螺旋電感、NiCr薄膜電阻)的等效電路伸縮模型,使得MMIC電路設(shè)計(jì)更加準(zhǔn)確與快速。4.采用實(shí)驗(yàn)室流片成功并完成大信號(hào)建模的柵寬為1.25mm,柵長為0.5μm的AlGaN/GaN HEMT器件設(shè)計(jì)完成了一款F類高效率的MMIC功率放大器。最終聯(lián)合電磁仿真結(jié)果顯示,整體電路在器件漏壓28V,柵壓為-2.2V下,輸出功率達(dá)到5.2W,增益10dB以上,功率附加效率50%以上,其中頻率范圍在5.3GHz到5.5GHz。
[Abstract]:Microwave power amplifier as the core component of microwave RF system in space, radar, However, the first generation semiconductor material represented by Si and the second generation semiconductor material, represented by GaAs, are limited by the material itself. Applications in these areas, As the third generation semiconductor material, GaN material has the width of bandgap of about 3.4eV. The power device made of the material has the advantages of high breakdown voltage, high power output density, high frequency operation, radiation resistance and so on. Monolithic microwave integrated circuit (MMIC), as a kind of circuit form, has many outstanding advantages such as small size, light weight, high reliability and so on, so monolithic GaN microwave power amplifier has a variety of advantages. There is a vast potential market for military and commercial applications. This paper relies on the technological conditions and accumulation of technology in the laboratory. Aiming at GaN MMIC, the following aspects are studied: 1. Based on the mature AlGaN/GaN HEMT fabrication technology in the key laboratory of wide band gap semiconductor materials and devices, Xi'an University of Electronic Science and Technology, The fabrication process of GaN MMIC amplifier compatible with the existing GaN HEMT manufacturing process is developed. Based on the original HEMT manufacturing process, the metal-insulating dielectric-metal capacitance is inserted. The manufacturing procedure of spiral microstrip line inductor and CrNi film resistor. 2. According to the need of modeling actual test data, a scheme of TRL de-embedding suitable for laboratory process and high frequency application is proposed. The structure size of TRL de-embedding is designed by using HFSS electromagnetic simulation software, and the flow sheet layout of TRL de-embedding is plotted. 3. The passive device capacitors used in MMIC circuit design are established. The equivalent circuit expansion model of the helical inductor NiCr film resistor, The MMIC circuit design is more accurate and fast .4.The AlGaN/GaN HEMT device with 1.25mm gate width and 0.5 渭 m gate length has been successfully used to model the large signal by using the lab chip. A class F high efficiency MMIC power amplifier has been designed. Finally, a high efficiency MMIC power amplifier has been designed. The results of electromagnetic simulation show that. The output power of the whole circuit is 5.2W at the leakage voltage of 28V, the gate voltage is -2.2V, the gain 10dB is more than 50%, and the frequency range is from 5.3GHz to 5.5 GHz.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN722.75

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相關(guān)碩士學(xué)位論文 前1條

1 張宏鶴;GaN基MMIC放大器設(shè)計(jì)[D];西安電子科技大學(xué);2015年

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本文編號(hào)：1697298