本文選題：硅基光子集成　切入點(diǎn)：模式轉(zhuǎn)換器件　出處：《上海交通大學(xué)》2015年碩士論文

【摘要】：近年來,隨著人們對(duì)于通信網(wǎng)絡(luò)數(shù)據(jù)傳輸容量和帶寬的需求不斷提升,傳統(tǒng)的集成電路技術(shù)已經(jīng)愈發(fā)不能滿足人們的需求,而全光通信則避免了光電轉(zhuǎn)換過程中產(chǎn)生的誤碼、噪聲和功耗等問題,可以大幅度提高傳輸容量和帶寬,得到了迅速的發(fā)展。硅基光子技術(shù)由于材料本身高折射率差、加工工藝與CMOS兼容等優(yōu)勢,便于低成本的超大規(guī)模集成光路的批量生產(chǎn),成為光子學(xué)集成領(lǐng)域人們關(guān)注的焦點(diǎn)。在各種硅基光器件中,用于實(shí)現(xiàn)模式轉(zhuǎn)換的器件由于其能夠大大增加波導(dǎo)中傳輸信息的容量而得到了廣泛研究。具體而言,分為高階模式轉(zhuǎn)換和偏振模式轉(zhuǎn)換兩類。其中高階模式轉(zhuǎn)換可以實(shí)現(xiàn)普通光學(xué)延遲線延遲量的倍增,從而增大波導(dǎo)的數(shù)據(jù)緩存能力;而偏振模式轉(zhuǎn)換則解決了硅基器件偏振敏感性的問題�；诖�,本文通過理論分析、仿真優(yōu)化和實(shí)驗(yàn)實(shí)現(xiàn)了幾種新型結(jié)構(gòu),具體而言分為以下三個(gè)部分:(1)針對(duì)高階模式轉(zhuǎn)換器件,通過設(shè)計(jì)不同參數(shù)的非對(duì)稱鋸齒結(jié)構(gòu)變跡光柵,實(shí)現(xiàn)了TE0到TE1和TE1到TE2的高階模式轉(zhuǎn)換,將二者結(jié)合在一個(gè)延遲結(jié)構(gòu)中,通過多次反向模式轉(zhuǎn)換,將普通光學(xué)延遲線的延遲量提高三倍以上,并以此為基礎(chǔ)提出了實(shí)現(xiàn)更大倍數(shù)延遲量的設(shè)想。(2)針對(duì)基于模式演變的偏振旋轉(zhuǎn)器件進(jìn)行研究,優(yōu)化設(shè)計(jì)出一種前后波導(dǎo)厚度一致且無尖角的新型偏振旋轉(zhuǎn)器,提高了其可集成性和可加工性,并充分發(fā)揮其大帶寬、高容差的特性,有效實(shí)現(xiàn)了偏振模式轉(zhuǎn)換。(3)針對(duì)基于模式混合的偏振旋轉(zhuǎn)器件進(jìn)行研究,通過仿真,實(shí)現(xiàn)了一種雙階梯形不對(duì)稱截面的偏振旋轉(zhuǎn)器,該器件具備高偏振消光比、低損耗、小尺寸等優(yōu)點(diǎn),并通過實(shí)驗(yàn)證明了其良好的偏振轉(zhuǎn)換特性,在純硅基集成領(lǐng)域?qū)崿F(xiàn)了同類器件最高的偏振轉(zhuǎn)換效率。
[Abstract]:In recent years, with the increasing demand for data transmission capacity and bandwidth of communication network, the traditional integrated circuit technology has become increasingly unable to meet the needs of people, and all-optical communication has avoided the error code generated in the process of photoelectric conversion. Problems such as noise and power consumption can greatly improve the transmission capacity and bandwidth, and have been developed rapidly. Due to the high refractive index of materials, the fabrication process is compatible with CMOS, and so on. The mass production of large scale integrated optical path with low cost has become the focus of attention in the field of photonics integration. Devices used to achieve mode conversion have been extensively studied for their ability to greatly increase the capacity of information transmitted in waveguides. It can be divided into two categories: high order mode conversion and polarization mode conversion. High order mode conversion can double the delay of ordinary optical delay line and increase the data buffer ability of waveguide. Polarization mode conversion solves the problem of polarization sensitivity of silicon based devices. Based on this, several new structures are realized by theoretical analysis, simulation, optimization and experiment. Specifically, it is divided into the following three parts: 1) for high-order mode conversion devices, the high-order mode conversion from TE0 to TE1 and from TE1 to TE2 is realized by designing asymmetric zigzag structure apodized gratings with different parameters, and the two are combined in a delay structure. The delay of ordinary optical delay line is increased by more than three times through multiple reverse mode conversion, and based on this, the assumption of realizing a greater multiple delay is put forward. (2) the polarization rotation device based on mode evolution is studied. A new polarization rotator with uniform thickness of front and rear waveguides and no sharp angle is designed, which improves its integrability and machinability, and gives full play to its characteristics of large bandwidth and high tolerance. The polarization mode conversion is realized effectively. (3) the polarization rotation device based on mode mixing is studied. Through simulation, a kind of polarization rotator with double step asymmetric section is realized. The device has high polarization extinction ratio and low loss. The advantages of small size and good polarization conversion characteristics are proved by experiments. The highest polarization conversion efficiency of the same kind of devices is realized in the field of pure silicon based integration.
【學(xué)位授予單位】：上海交通大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN256

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