本文選題：譜元法　切入點(diǎn)：半導(dǎo)體　出處：《南京理工大學(xué)》2015年碩士論文

【摘要】：隨著人們對(duì)半導(dǎo)體器件的要求越來(lái)越高,為了能更好的分析半導(dǎo)體器件的特性,制造出符合要求的半導(dǎo)體器件,對(duì)這類器件的數(shù)值仿真算法的研究顯得至關(guān)重要。PIN二極管器件是一類簡(jiǎn)單而又不失一般性的半導(dǎo)體器件。本文采用譜元法(SEM)的基本理論對(duì)PIN管進(jìn)行了數(shù)值仿真,得到了PIN管的穩(wěn)態(tài)特性和瞬態(tài)特性,并對(duì)仿真算法進(jìn)行了優(yōu)化。本文首先介紹了這一課題的研究意義以及國(guó)內(nèi)外的研究現(xiàn)狀,緊接著便對(duì)PIN二極管的基本理論做出了介紹,包括PIN管的基本工作原理以及描述它的物理方程和邊界條件。然后,本文詳細(xì)介紹了利用SEM方法對(duì)PIN二極管進(jìn)行數(shù)值仿真的過(guò)程,包括公式的推導(dǎo)、計(jì)算機(jī)語(yǔ)言的實(shí)現(xiàn)思路以及算法正確性的驗(yàn)證。其中,對(duì)PIN管的數(shù)值仿真主要包括穩(wěn)態(tài)非耦合仿真、穩(wěn)態(tài)耦合仿真以及瞬態(tài)耦合仿真。穩(wěn)態(tài)仿真可以得到PIN管的伏安特性,瞬態(tài)仿真可以得到PIN管正向和反向的電流過(guò)沖效應(yīng)。最后,對(duì)上述仿真算法采用SEM方法的基本特性進(jìn)行了優(yōu)化,加快了程序執(zhí)行的速度。本文中對(duì)PIN二極管的數(shù)值仿真算法為半導(dǎo)體器件的數(shù)值仿真搭建了一個(gè)平臺(tái),是對(duì)其它半導(dǎo)體器件,甚至半導(dǎo)體集成電路仿真的基礎(chǔ)。
[Abstract]:With the increasing demand for semiconductor devices, in order to better analyze the characteristics of semiconductor devices, semiconductor devices that meet the requirements are manufactured. It is very important to study the numerical simulation algorithm of this kind of devices. PIN diode devices are a kind of simple and general semiconductor devices. In this paper, the basic theory of spectral element method (SEM) is used to simulate the PIN transistors numerically. The steady-state and transient characteristics of PIN transistor are obtained, and the simulation algorithm is optimized. Firstly, this paper introduces the research significance of this topic and the research status at home and abroad, and then introduces the basic theory of PIN diode. The basic working principle of PIN tube and its physical equation and boundary conditions are described. Then, the process of numerical simulation of PIN diode using SEM method is introduced in detail, including the derivation of formula. The realization idea of computer language and the correctness of the algorithm are verified. Among them, the numerical simulation of PIN tube includes steady-state decoupling simulation, steady-state coupling simulation and transient coupling simulation. The volt-ampere characteristics of PIN tube can be obtained by steady-state simulation. Transient simulation can get forward and reverse current overshoot effect of PIN transistor. Finally, the basic characteristics of SEM method are optimized. In this paper, the numerical simulation algorithm for PIN diodes provides a platform for the numerical simulation of semiconductor devices, which is the basis of the simulation of other semiconductor devices and even semiconductor integrated circuits.
【學(xué)位授予單位】：南京理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN312.4

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本文編號(hào)：1684623