發(fā)布時(shí)間：2018-03-26 19:12

  本文選題：砷化鎵　切入點(diǎn)：約束刻蝕劑層技術(shù)　出處：《哈爾濱工業(yè)大學(xué)》2015年碩士論文

【摘要】：砷化鎵(GaAs)作為一種III-V族半導(dǎo)體材料,具有十分廣泛的應(yīng)用。在利用砷化鎵晶片制造各種器件的過程中,常用的微納加工方法通常無法同時(shí)滿足加工分辨率高、加工效率高、批量生產(chǎn)三方面的要求。約束刻蝕劑層技術(shù)作為一種新型電化學(xué)微納加工方法,可很好的滿足上述要求,具有很大的發(fā)展?jié)摿�。本文基于有限元方法對約束刻蝕劑層技術(shù)進(jìn)行了詳細(xì)的研究。首先闡述了靜態(tài)約束刻蝕仿真模型設(shè)置以及關(guān)鍵參數(shù)確定的理論依據(jù),在此基礎(chǔ)上建立了三維靜態(tài)約束刻蝕有限元仿真模型,并采用建立的仿真模型進(jìn)行了仿真計(jì)算,研究了電極形狀尺寸以及工作距離對于溶液內(nèi)物質(zhì)濃度分布的影響規(guī)律;建立了三維動(dòng)態(tài)約束刻蝕有限元仿真模型,研究了電極形狀尺寸、工作距離以及強(qiáng)制對流對于溶液內(nèi)刻蝕劑濃度分布的影響規(guī)律。研究了三維靜態(tài)約束刻蝕工件表面加工輪廓的計(jì)算方法,通過與文獻(xiàn)中得到的仿真和實(shí)驗(yàn)結(jié)果進(jìn)行對比,初步驗(yàn)證了計(jì)算方法的準(zhǔn)確性。并對靜態(tài)約束刻蝕過程進(jìn)行了仿真及分析,研究了溶液濃度配比、工作距離、電極形狀尺寸及加工時(shí)間對于溶液內(nèi)物質(zhì)濃度分布及工件表面加工輪廓的影響規(guī)律。研究了三維動(dòng)態(tài)約束刻蝕工件表面加工輪廓的計(jì)算方法,并對動(dòng)態(tài)約束刻蝕過程進(jìn)行了仿真分析,研究了溶液濃度配比、工作距離、電極形狀尺寸、平動(dòng)速度、旋轉(zhuǎn)角速度、旋轉(zhuǎn)半徑以及加工時(shí)間對于溶液內(nèi)刻蝕劑濃度分布及工件表面刻蝕輪廓的影響規(guī)律。另外,對平整加工過程中的部分工藝參數(shù)進(jìn)行了仿真分析,研究了溶液濃度、工作距離以及橫向進(jìn)給量的選取方法。對約束刻蝕微納加工平臺(tái)進(jìn)行了設(shè)計(jì)及搭建,進(jìn)行了約束刻蝕實(shí)驗(yàn)及刻蝕結(jié)果的分析。結(jié)果表面:所搭建的加工儀器可以實(shí)現(xiàn)對于砷化鎵工件的靜態(tài)、動(dòng)態(tài)約束刻蝕;通過刻蝕結(jié)果與仿真結(jié)果的定性對比驗(yàn)證了仿真結(jié)果的正確性。
[Abstract]:Gallium arsenide (GaAs) as a III-V semiconductor material, which is widely used in the manufacturing process of various devices. Using a GaAs wafer, commonly used micromachining methods usually cannot satisfy the processing of high resolution, high processing efficiency, batch production of three requirements. Confined etchant layer as a new electrochemical technology micro machining method, can well meet the above requirements, it has great development potential. This paper based on the finite element method is studied in detail on the Celt. First described the theoretical basis to determine the static constraint set etching simulation model and key parameters, based on the established three-dimensional finite element static constraint etching the simulation model, and simulated using the established simulation model, the influence of electrode shape size and working distance for the solution of thick material Influence of cloth; to establish the three-dimensional finite element dynamic constraint etching simulation model, the influence of electrode shape size, working distance and forced convection for solution in the etchant concentration distribution. The influence of the study of 3D static constraints etching workpiece surface contour calculation method, by comparing with the simulation and experimental results obtained in the literature the results validated the accuracy of the calculation method and the static constraints. The etching process is simulated and analyzed, the solution concentration, working distance, influence of electrode shape size and processing time for solution concentration distribution and workpiece material surface processing contour. Calculation method of 3D dynamic constraint etching surface processing the outline, and the dynamic constraint etching process was simulated and analyzed, studied the concentration ratio, working distance, electrode shape and size, Translational velocity, angular velocity, rotation radius and processing time for influence of solution concentration and etching agent etching on the surface of the workpiece contour. In addition, some parameters in the process of formation are analyzed, studied the solution concentration, separation and selection method of horizontal feed distance constraint on etching work. Nano processing platform is designed and built, analyzed and experimental constraints etching etching results. Results: the processing surface construction of the apparatus can realize static for GaAs workpiece, dynamic constraint by etching etching; qualitative comparison results and simulation results verify the correctness of simulation results.

【學(xué)位授予單位】：哈爾濱工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN305.7

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