本文選題：IGBT開關(guān)特性　切入點(diǎn)：工況復(fù)現(xiàn)　出處：《浙江大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：大容量絕緣柵雙極型晶體管(insulated gate bipolar transistor,IGBT)在風(fēng)力發(fā)電、柔性直流輸電等大功率變流系統(tǒng)中得到極為廣泛應(yīng)用,提高大容量IGBT應(yīng)用過程中的可靠性是提高整個(gè)變流系統(tǒng)可靠性的最重要途徑之一,其中大容量IGBT的動態(tài)特性與實(shí)際正常運(yùn)行工況聯(lián)系最為緊密。目前國內(nèi)外對于大容量IGBT的研究主要基于離線式的測試方法,較少涉及準(zhǔn)在線或在線研究,因此亟需研制大容量IGBT動態(tài)特性準(zhǔn)在線測試平臺。利用測試平臺進(jìn)行器件選型及散熱器設(shè)計(jì)等,有助于提前發(fā)現(xiàn)變流器的設(shè)計(jì)缺陷并提高變流器在實(shí)際應(yīng)用中的可靠性。本論文根據(jù)大容量IGBT在線測試的需求,設(shè)計(jì)和搭建了基于H橋拓?fù)涞恼淄呒墤?yīng)用工況復(fù)現(xiàn)測試平臺,通過工況復(fù)現(xiàn)測試平臺,可以模擬不同的實(shí)際運(yùn)行工況(主要包括:外界環(huán)境溫度,開關(guān)頻率,負(fù)載頻率,有功功率和無功功率),進(jìn)行大容量IGBT的準(zhǔn)在線測試,為大容量IGBT在實(shí)際運(yùn)行工況中可靠運(yùn)行提供理論基礎(chǔ)。鑒于死區(qū)效應(yīng)對于單相大功率變流器輸出電能質(zhì)量的影響,為使工況復(fù)現(xiàn)平臺更準(zhǔn)確的模擬實(shí)際的運(yùn)行工況,進(jìn)行了相應(yīng)的死區(qū)補(bǔ)償,從而減小負(fù)載電感的電流紋波以及其THD(Total Harmonic Distortion),使得負(fù)載電流與實(shí)際變流器電流諧波含量相近。IGBT結(jié)溫是影響IGBT模塊可靠性的重要因素,國內(nèi)外學(xué)者提出了諸多基于熱敏感電參數(shù)的結(jié)溫提取方法,然而尚未涉及大容量IGBT模塊動態(tài)結(jié)溫在線監(jiān)測和測試研究。本文以關(guān)斷延遲時(shí)間為熱敏感電參數(shù),簡要論述了其與器件結(jié)溫和負(fù)載電流等運(yùn)行工況的相關(guān)性,并通過實(shí)測構(gòu)建了三維數(shù)據(jù)庫�？紤]到IGBT模塊的功率損耗是影響其結(jié)溫的重要因素之一,分析了一個(gè)負(fù)載周期內(nèi)IGBT模塊(IGBT和反并聯(lián)二極管)的開關(guān)損耗和導(dǎo)通損耗的分布特征。并基于運(yùn)行工況復(fù)現(xiàn)平臺,研究了大容量IGBT模塊在不同負(fù)載頻率和不同負(fù)載電流相位時(shí)被測IGBT的功率損耗和結(jié)溫波動規(guī)律,并通過與模塊內(nèi)置的負(fù)溫度系數(shù)(Negative Temperature Coefficient,NTC)熱敏電阻進(jìn)行結(jié)溫波動對比,驗(yàn)證了以關(guān)斷延遲時(shí)間進(jìn)行IGBT模塊結(jié)溫在線提取和檢測具有靈敏度高、響應(yīng)速度快和易于集成的優(yōu)點(diǎn)。揭示了負(fù)載頻率、電流相位對IGBT最大結(jié)溫的影響程度。驗(yàn)證了基于關(guān)斷延遲時(shí)間參數(shù)法對IGBT結(jié)溫在線提取的可行性。
[Abstract]:Large capacity insulated gate bipolar transistor (IGBT) has been widely used in wind power generation, flexible direct current transmission and other high-power converter systems. Improving the reliability of large capacity IGBT is one of the most important ways to improve the reliability of the whole converter system. The dynamic characteristics of large capacity IGBT are most closely related to the actual normal operating conditions. At present, the research on large capacity IGBT is mainly based on off-line testing methods, and less on quasi online or online research. Therefore, it is urgent to develop a quasi on-line testing platform for large capacity IGBT dynamic characteristics, which can be used for device selection and radiator design, etc. It is helpful to discover the design defect of converter in advance and improve the reliability of converter in practical application. According to the requirement of large capacity IGBT online testing, this paper designs and builds a megawatt test platform based on H-bridge topology. Through the test platform, we can simulate different actual operating conditions (including external environment temperature, switching frequency, load frequency, active power and reactive power), and carry out quasi online test of large capacity IGBT. In view of the influence of dead-time effect on the output power quality of single-phase high-power converter, in order to make the reappearance platform more accurately simulate the actual operating conditions, this paper provides a theoretical basis for the reliable operation of large-capacity IGBT in actual operating conditions. The dead-time compensation is carried out to reduce the current ripple of the load inductor and its THD(Total Harmonic distortion, which makes the harmonic content of the load current and the actual converter current similar. The IGBT junction temperature is an important factor affecting the reliability of the IGBT module. Many methods for extracting junction temperature based on thermal sensitive electrical parameters have been proposed by domestic and foreign scholars. However, no research has been done on on-line monitoring and testing of dynamic junction temperature in large capacity IGBT modules. In this paper, the turn-off delay time is taken as the thermally sensitive electrical parameter. This paper briefly discusses the correlation between the device junction and the load current and other operating conditions, and constructs a 3D database through the actual measurement. Considering that the power loss of the IGBT module is one of the important factors affecting the junction temperature, The distribution characteristics of switching loss and on-loss of a IGBT module and anti-parallel diode during a load cycle are analyzed. In this paper, the power loss and junction temperature fluctuation of large capacity IGBT module under different load frequency and load current phase are studied, and the junction temperature fluctuation is compared with the negative Temperature coefficient (NTC) thermistor built in the module. It is verified that on-line detection and detection of junction temperature of IGBT module with turn-off delay time has the advantages of high sensitivity, fast response speed and easy integration. The load frequency is revealed. The effect of current phase on the maximum junction temperature of IGBT is verified. The feasibility of on-line extraction of IGBT junction temperature based on turn-off delay time parameter method is verified.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN322.8

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 費(fèi)躍農(nóng)，吳志強(qiáng);逆變電源開關(guān)損耗的分析與對策[J];南昌大學(xué)學(xué)報(bào)(工程技術(shù)版);1996年02期

2 M.Baβler;A.Ciliox;P.Kanschat;;開關(guān)損耗與軟度的平衡:改善軟度是否需要不同型號的芯片?[J];變頻器世界;2010年08期

3 張桂斌,徐政;最小開關(guān)損耗VSVPWM技術(shù)的研究與仿真[J];電工技術(shù)學(xué)報(bào);2001年02期

4 黃海;李白雅;李強(qiáng);尹進(jìn)田;;基于最小開關(guān)損耗的SVPWM調(diào)制技術(shù)[J];自動化與儀表;2007年01期

5 馬麗梅;關(guān)宇;吳元亮;丁偉;;基于最小開關(guān)損耗SVPWM技術(shù)的仿真研究[J];微計(jì)算機(jī)信息;2010年28期

6 毛興武 ,許海東;新型低開關(guān)損耗QFET功率MOSFET及應(yīng)用[J];世界電子元器件;2000年12期

7 劉松;;理解功率MOSFET的開關(guān)損耗[J];今日電子;2009年10期

8 ;Vishay推出新款超快二極管,優(yōu)化系統(tǒng)開關(guān)損耗[J];電子設(shè)計(jì)工程;2013年12期

9 閻治安;唐明;易萍虎;;電機(jī)控制中電壓空間矢量脈寬調(diào)制算法的探究[J];西安交通大學(xué)學(xué)報(bào);2006年12期

10 趙佶;;瑞薩第七代650V和1250V IGBT建立新技術(shù)標(biāo)準(zhǔn)[J];半導(dǎo)體信息;2012年04期

相關(guān)會議論文 前1條

1 陳權(quán);鄭常寶;;用于計(jì)算變換器開關(guān)損耗的開關(guān)模型構(gòu)建[A];安徽節(jié)能減排博士科技論壇論文集[C];2007年

相關(guān)碩士學(xué)位論文 前10條

1 喬亮;有源電力濾波器延時(shí)和開關(guān)損耗問題的研究[D];東北大學(xué);2013年

2 邵偉恒;基于虛擬阻抗控制策略的有源電力濾波器的研究[D];東北大學(xué);2014年

3 許芬;SiC二極管的非線性行為及其開關(guān)損耗研究[D];湘潭大學(xué);2016年

4 祝沖沖;大容量IGBT模塊應(yīng)用工況復(fù)現(xiàn)平臺的設(shè)計(jì)與研究[D];浙江大學(xué);2017年

5 江劍;電力電子器件開關(guān)損耗測試與建模系統(tǒng)的研制、優(yōu)化與驗(yàn)證[D];浙江大學(xué);2006年

6 胥鵬程;應(yīng)用于1-MHzBoostPFC變換器的電流源驅(qū)動電路[D];南京航空航天大學(xué);2012年

7 石磊;基于DSP的PWM加相移控制的雙向DC/DC變換器[D];浙江大學(xué);2006年

8 余娟;功率MOSFET應(yīng)用研究及主電路設(shè)計(jì)[D];西安理工大學(xué);2005年

9 王蓓蓓;電力電子開關(guān)換向過程能量吸收回饋方法研究[D];北京交通大學(xué);2015年

10 邢文彥;高頻高壓大功率電除塵電源優(yōu)化設(shè)計(jì)[D];燕山大學(xué);2015年

，

本文編號：1652351