本文選題：低噪聲放大器　切入點：雙輸入　出處：《電子科技大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著無線技術(shù)的深度發(fā)展,低頻的頻譜資源已非常匱乏,往更高頻率發(fā)展是大勢所趨。更高頻段的無線通信有更寬的帶寬,更高的信道容量,更大的數(shù)據(jù)速率等諸多好處。而低噪聲放大器是接收鏈路的第一個有源放大模塊,它將信號進行放大,并盡可能少引入噪聲,對信號的判別有著舉足輕重的影響。并且隨著硅基集成電路工藝的發(fā)展,柵長不斷減小,特征頻率不斷提升,使其也能滿足微波電路的設(shè)計要求,再者硅基集成電路有低成本、低功耗、高集成的優(yōu)勢。所以對硅基微波低噪聲放大器集成電路進行研究有重大意義。針對微波集成電路設(shè)計的流程問題,本文敘述了工藝選擇的過程,確定晶體管柵長、柵寬、柵指的尺寸與偏置電壓的大小,并在HFSS中建立工藝模型,以滿足微波電路電磁仿真的需要。采用將HFSS中電感建模仿真,提取S參數(shù)與工藝庫中同尺寸電感S參數(shù)對比的方式來初步驗證工藝模型的準(zhǔn)確性。另外本文總結(jié)了硅基微波低噪聲放大器集成電路設(shè)計的經(jīng)驗。針對傳統(tǒng)低噪聲放大器噪聲系數(shù)大、功耗高的問題,本文設(shè)計了一款基于CMOS 180nm工藝的Ku波段單端低噪聲放大器芯片。第一級采用變壓器耦合雙輸入結(jié)構(gòu)。測試結(jié)果表明最高增益為在17.5GHz的18dB,最小的噪聲系數(shù)為在17.4GHz的3.29dB,并且在1.8V供電電壓下僅消耗了7mA電流。這比傳統(tǒng)的兩級共柵結(jié)構(gòu)的增益15dB提高了10%,噪聲系數(shù)4dB降低了18%。芯片測試的輸入1dB壓縮點為-12dBm,所占面積為0.48mm~2。設(shè)計表明:雙輸入結(jié)構(gòu)對增大增益、降低噪聲系數(shù)有明顯的作用。針對單端電路封裝后受金絲鍵合影響嚴(yán)重的問題,本文設(shè)計了一款基于CMOS 180nm工藝的Ku波段差分低噪聲放大器芯片。第一級采用電容交叉耦合雙輸入結(jié)構(gòu)。設(shè)計結(jié)果表明該放大器能較好抑制金絲鍵合影響,有較好的工藝角性能。另外在性能滿足設(shè)計指標(biāo)的前提下,該放大器采用了全新的矩形螺旋電感,使該芯片面積比單端低噪聲放大器芯片面積減小了70%,為0.144mm~2。
[Abstract]:With the deep development of wireless technology, the low frequency spectrum resources have been very scarce, it is the trend to develop higher frequency. The higher frequency band wireless communication has wider bandwidth, higher channel capacity, The LNA is the first active amplification module in the receiving link, which amplifies the signal with as little noise as possible. With the development of silicon based integrated circuit technology, the gate length is decreasing and the characteristic frequency is increasing, so that it can meet the design requirements of microwave circuit, and the silicon based integrated circuit has low cost. Because of the advantages of low power consumption and high integration, it is of great significance to study the silicon based microwave low noise amplifier integrated circuits. In view of the process of microwave integrated circuit design, this paper describes the process of process selection and determines the gate length of transistors. The width of the gate, the size of the gate finger and the bias voltage, and the process model in HFSS are established to meet the needs of electromagnetic simulation of microwave circuits. The inductance in HFSS is modeled and simulated. In order to verify the accuracy of the process model, S parameters are extracted and compared with the same size inductors in the process library. In addition, the experience of silicon based microwave low noise amplifier IC design is summarized in this paper. The sound amplifier has a large noise coefficient. The problem of high power consumption, In this paper, a Ku band single ended low noise amplifier chip based on CMOS 180nm process is designed. In the first stage, transformer coupled dual input structure is used. The test results show that the maximum gain is 18 dB of 17.5GHz and the minimum noise coefficient is in 17.4GHz. 3.29 dB, and only consumes 7mA current at 1.8 V supply voltage. This is 10 times higher than the gain 15dB of the traditional two-stage common-gate structure, and the noise coefficient 4dB is reduced by 18. The input 1dB compression point of chip test is -12 dBmand the area is 0.48 mm / 2. The design shows that:. Double input structure pair increases gain, Reducing the noise coefficient has obvious effect. In view of the problem that the single end circuit is seriously affected by the gold wire bonding after the single terminal circuit is encapsulated, In this paper, a Ku-Band differential low noise amplifier chip based on CMOS 180nm process is designed. In the first stage, the capacitive cross coupling dual input structure is used. The design results show that the amplifier can restrain the influence of gold wire bonding. The new rectangular spiral inductor is used in the amplifier, and the area of the chip is reduced to 0.144 mm / 2 compared with that of the single-ended low noise amplifier chip.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN722.3

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相關(guān)期刊論文 前1條

1 丁君;張龍;丁武偉;;Ku波段低噪聲放大器的設(shè)計[J];火力與指揮控制;2009年11期

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本文編號：1648041