本文選題：CMP后清洗　切入點：銅的氧化物　出處：《河北工業(yè)大學》2015年碩士論文　論文類型：學位論文

【摘要】：隨著微電子產(chǎn)業(yè)的快速發(fā)展,器件特征尺寸越來越小。生產(chǎn)過程中的各種污染對元器件的性能及可靠性的危害也日益突出,所以對材料表面的清潔度要求更加嚴格,因此對對微電子清洗領域的研究,具有很重要的意義。本文詳細分析了在GLSI多層銅布線片CMP過程中銅氧化物顆粒的形成機理以及存在狀態(tài),分析了螯合劑和表面活性劑在銅氧化物顆粒去除方面的作用。利用自主配制的主要成分為螯合劑和表面活性劑的清洗劑結合PVA刷洗法對去除CMP后Cu表面銅氧化物顆粒具有良好的效果。通過AFM檢測,分析了FA/OII型螯合劑結合刷洗工藝對于表面粗糙度的影響,并采用臺階儀對不同濃度的FA/OII型螯合劑對Cu的靜態(tài)腐蝕速率進行了測試,探求清洗劑中螯合劑的合適的濃度,以免在清洗過程中由于FA/OII型螯合劑濃度過大造成粗糙度過大及銅線條的損失。結合超聲或PVA刷洗的方法分別對銅光片和銅布線片進行清洗,利用金相顯微鏡和掃描電子顯微鏡(SEM)對銅表面清洗前后的形貌進行對比,發(fā)現(xiàn)自主配制的該清洗劑能夠有效去除CMP后銅表面的銅氧化物雜質,并且該清洗劑成分簡單、環(huán)保。利用自主配置的清洗劑進行Cu表面銅氧化物顆粒去除實驗,通過大量實驗得到清洗劑的最佳配比為100ppm FA/OII螯合劑和1000ppm FA/OI非離子表面活性劑,適用于GLSI多層銅布線片的CMP后清洗,清洗后得到的銅氧化物顆粒去除效果已滿足生產(chǎn)需要,清洗后Cu表面的粗糙度得到了改善,并且對銅表面的有機物殘留的去除也有一定效果。
[Abstract]:With the rapid development of the microelectronics industry, the characteristic size of the devices is becoming smaller and smaller. The pollution in the production process is increasingly harmful to the performance and reliability of the components, so the cleanliness of the material surface is required more strictly. Therefore, it is of great significance to study the field of microelectronic cleaning. In this paper, the formation mechanism and the existing state of copper oxide particles in the CMP process of GLSI multilayer copper wiring sheet are analyzed in detail. The role of chelating agents and surfactants in the removal of copper oxide particles was analyzed. The copper oxide on Cu surface after CMP removal was treated by using the cleaning agent composed of chelating agent and surfactant combined with PVA scrubbing method. Particles have a good effect. Through AFM detection, The influence of FA/OII type chelating agent combined with brushing process on surface roughness was analyzed. The static corrosion rate of Cu by FA/OII chelating agent of different concentration was tested by step analyzer to find out the appropriate concentration of chelating agent in cleaning agent. In order to avoid the loss of roughness and copper line caused by excessive concentration of FA/OII chelator during cleaning process, copper light sheet and copper wiring sheet are cleaned separately by ultrasonic or PVA scrubbing method. The morphologies of copper surface before and after cleaning were compared by metallographic microscope and scanning electron microscope (SEM). It was found that the self-prepared cleaning agent could effectively remove copper oxide impurities on copper surface after CMP, and the composition of the cleaning agent was simple. Environmental protection. Copper oxide particle removal experiments were carried out on Cu surface with self-configured cleaning agent. The optimum proportion of cleaning agent was 100ppm FA/OII chelating agent and 1000ppm FA/OI Nonionic surfactant through a large number of experiments. After CMP cleaning for GLSI multilayer copper wiring sheet, the removal effect of copper oxide particles after cleaning has been satisfied with the production needs, and the roughness of Cu surface has been improved after cleaning. The removal of organic residue on copper surface is also effective.
【學位授予單位】：河北工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN405.97

【參考文獻】

相關期刊論文 前1條

1 陳蘇,張楷亮,宋志棠,封松林;多層互連工藝中銅布線化學機械拋光研究進展[J];半導體技術;2005年08期

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本文編號：1646976