發(fā)布時間：2018-03-19 19:34

  本文選題：低維半導體光電探測器　切入點：雙勢壘　出處：《華東師范大學》2017年碩士論文　論文類型：學位論文

【摘要】：半導體低維結構具有能帶人工可剪裁性、量子尺寸效應、共振隧穿效應等多種內(nèi)涵豐富而深刻的特殊現(xiàn)象和效應,成為推動半導體探測技術迅猛發(fā)展的重要動力。其中共振隧穿效應的超高工作速度和負微分電阻特性引起科研人員的研究興趣。室溫條件下低維光電探測器具有一定暗電流,常采用制冷來抑制,以提高器件靈敏度和探測信噪比。本文研究低維光電探測器的低溫性能及讀出:采用Crosslight Apsys仿真軟件研究AlGaAs/InGaAs光電探測器載流子共振隧穿方式,級聯(lián)阱中量子點結構光電探測器的暗電流,信噪比和探測率。研究光電探測器能帶模型,低溫Ⅰ-Ⅴ特性,光電流譜特性,光致發(fā)光特性等,進而分析溫度對低維半導體光電探測器隧穿幾率、能帶位置、讀出等性能的影響。通過文獻調(diào)研和仿真手段分析低溫CMOS電路,研究低溫讀出設計,通過Janis SHI液氦循環(huán)制冷測試系統(tǒng)測試了2×8讀出電路42K的數(shù)模輸出特性。
[Abstract]:Semiconductor low-dimensional structures have a variety of special phenomena and effects with rich and profound connotations, such as energy band artificial tailoring, quantum size effect, resonant tunneling effect and so on. It has become an important driving force to promote the rapid development of semiconductor detection technology. The ultra-high working speed and negative differential resistance characteristics of resonant tunneling effect have aroused the interest of researchers. The low-dimensional photodetectors have a certain dark current at room temperature. The low temperature performance and readout of low dimensional photodetector are studied in this paper. The carrier resonant tunneling mode of AlGaAs/InGaAs photodetector is studied by Crosslight Apsys simulation software. The dark current, signal-to-noise ratio (SNR) and detectivity of photodetectors with quantum dot structure in cascaded wells are studied. The energy band model of photodetectors, low temperature 鈪，

本文編號：1635695