發(fā)布時(shí)間：2018-03-18 04:12

  本文選題：憶阻器　切入點(diǎn)：記憶元件　出處：《暨南大學(xué)》2016年碩士論文　論文類型：學(xué)位論文

【摘要】：記憶元件包括憶阻器、憶容器和憶感器,它們的提出是對(duì)經(jīng)典電路理論的擴(kuò)充。從2008年HP實(shí)驗(yàn)室發(fā)現(xiàn)了納米級(jí)的憶阻器后掀起了記憶元件研究的熱潮。然而憶阻器制作工藝復(fù)雜、實(shí)驗(yàn)環(huán)境嚴(yán)格苛刻,目前無(wú)法批量生產(chǎn),而憶容器和憶感器甚至至今未能找到對(duì)應(yīng)的實(shí)物,所以對(duì)于這些記憶元件的研究主要還是依賴于計(jì)算機(jī)輔助電路分析軟件,因此研究記憶元件的模擬器成為一項(xiàng)重要的課題。本文首先全面探討了記憶元件的本構(gòu)方程,在此基礎(chǔ)上對(duì)記憶元件的模擬器進(jìn)行設(shè)計(jì),包括憶阻器的流控型模擬器和壓控型模擬器、憶容器的壓控型模擬器和荷控型模擬器、憶感器的流控型模擬器和磁控型模擬器,以及所有模型的接地型接法和浮地型接法。然后對(duì)憶阻器-憶容器和憶阻器-憶感器轉(zhuǎn)換電路進(jìn)行分析,由此得到基于憶阻器的憶容器模擬器和憶感器模擬器的電路設(shè)計(jì)。更進(jìn)一步地,本文對(duì)分?jǐn)?shù)階憶阻器?M進(jìn)行研究,推導(dǎo)其數(shù)學(xué)方程,并得到一個(gè)通用的分?jǐn)?shù)階憶阻器模擬器,只要在輸入端輸入相應(yīng)的參數(shù)就可以得到各種不同的分?jǐn)?shù)階憶阻器模擬器,簡(jiǎn)單方便快捷;并以0.5階和0.9階的分?jǐn)?shù)階憶阻器為代表對(duì)分?jǐn)?shù)階憶阻器進(jìn)行了研究,得到了分?jǐn)?shù)階憶阻的輸入輸出、狀態(tài)變量、憶阻值等波形。最后,采用常規(guī)電路元件對(duì)憶阻器模擬器進(jìn)行實(shí)物搭建,通過(guò)PCB板焊接方式制作憶阻器模擬器,并通過(guò)示波器仿真驗(yàn)證,證明本文所設(shè)計(jì)的憶阻器模擬器是正確的。總之,本文對(duì)記憶元件模擬器的研究具有廣泛的理論意義和實(shí)用價(jià)值。
[Abstract]:The memory element includes a resistor, a memory container and a memory sensor, They are an extension of the classical circuit theory. Since 2008, the discovery of nanoscale memristors in HP Labs has set off an upsurge in the research of memory components. However, the fabrication process of the devices is complex, and the experimental environment is strict. At present, there is no mass production, and the memory container and sensor can not even find the corresponding physical object so far, so the research of these memory elements mainly depends on the computer aided circuit analysis software. Therefore, studying the simulator of memory element becomes an important subject. Firstly, the constitutive equation of memory element is discussed, and then the simulator of memory element is designed. Including the flow control simulator and voltage control simulator of the resistor, the pressure control simulator and the load control simulator of the container, the flow control simulator and the magnetic control simulator of the sensor. And the grounding connection method and floating ground connection method of all models. Then, the conversion circuit of amnesizer-memory container and amnesizer-amnesia sensor is analyzed. The circuit design of the memory container simulator and the memory sensor simulator based on the resistive device is obtained. M carries on the research, deduces its mathematical equation, and obtains a general fractional order amnesia simulator, as long as input the corresponding parameter in the input end, can obtain each kind of different fractional order amnesia simulator, simple and convenient; In addition, the fractional order amnesia with 0.5 order and 0.9 order is taken as the representative, and the input and output of fractional order amnesia, the state variable, the value of memory resistance and so on are obtained. Finally, the input and output of fractional order amnesia, the state variable, the value of memory resistance and so on are obtained. The general circuit element is used to build the memristor simulator, and the PCB board welding method is used to make the memristor simulator. Through the oscilloscope simulation, it is proved that the memristor simulator designed in this paper is correct. In this paper, the study of memory element simulator has a wide range of theoretical significance and practical value.
【學(xué)位授予單位】：暨南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN602

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