本文選題：寄生導(dǎo)通電阻　切入點(diǎn)：摻雜濃度　出處：《安徽大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著科技的迅猛發(fā)展,生活中的各個(gè)角落都有電子產(chǎn)品的身影,半導(dǎo)體元器件無疑是這些電子產(chǎn)品的核心,而VD-MOSFET具有驅(qū)動(dòng)功率低、輸入阻抗高、頻率特性好、開關(guān)速度快等優(yōu)良的電學(xué)性能,被廣泛用于各種工業(yè)及軍用系統(tǒng)的功率放大及控制,使其在能源控制領(lǐng)域至關(guān)重要的地位并至少控制開關(guān)全球50%的用電量。由于功率器件的擊穿電壓不能過低和過高,導(dǎo)通電阻過高會(huì)引起高能耗,同時(shí)所散發(fā)的熱量會(huì)影響器件性能穩(wěn)定。所以選擇最優(yōu)的VD-MOSFET結(jié)構(gòu)以及摻雜濃度尤為重要。而這需要我們對(duì)VD-MOSFET器件基本原理進(jìn)行全面深入的了解,建立最準(zhǔn)確的物理模型對(duì)其特性的研究具有非常重要的意義。文獻(xiàn)顯示目前對(duì)于功率半導(dǎo)體導(dǎo)通電阻精確模型的建立依然處于緩慢發(fā)展的階段,無論是早期的S.C.Sun近似模型還是后來利用保角變換建立近似模型,都未真正給出其導(dǎo)通電阻最精確的解析解。本文將針對(duì)VD-MOSFET器件的導(dǎo)通電阻進(jìn)行深入研究,根據(jù)其電流流動(dòng)特性,給出了定解問題及其半解析解法,建立了寄生導(dǎo)通電阻的二維模型。文章內(nèi)容由以下幾部分組成:首先,分析VD-MOSFET的電學(xué)特性,總結(jié)關(guān)于導(dǎo)通電阻的建模方法及求解過程,比較各類研究方法的優(yōu)缺點(diǎn)。其方法主要包括解析法、數(shù)值方法以及半解析法。其次,建立VD-MOSFET導(dǎo)通電阻的非溝道部分的二維模型。首先依據(jù)其電阻特性將模型結(jié)構(gòu)分為電子積累層、JFET區(qū)、N漂移區(qū)和襯底區(qū);其次,分析各區(qū)域的載流子運(yùn)動(dòng)規(guī)律,確定其二維的狀態(tài)方程和邊界條件。由于VD-MOSFET各區(qū)域的摻雜濃度和導(dǎo)電載流子濃度有所區(qū)別,本文設(shè)定了各區(qū)域之間的銜接條件。最后利用分離變量法以及傅利葉正交變換法求出各區(qū)域電勢(shì)的半解析解,最終由電勢(shì)方程求得非溝道部分的寄生電阻。最后,用差分方法驗(yàn)證了基于半解析法的VD-MOSFET寄生導(dǎo)通電阻模型的電勢(shì)分布和電阻,充分證明了所提出的二維模型的正確性。計(jì)算結(jié)果表明,半解析法得到的二維模型電勢(shì)分布和數(shù)值計(jì)算得到的電勢(shì)分布相差很小,跟據(jù)三維電勢(shì)得到的等勢(shì)線相差極小,整體電勢(shì)狀態(tài)穩(wěn)定。最終比較不同參數(shù)下的半解析法模型電阻與數(shù)值計(jì)算得到的電阻值,其誤差極小,基本為1%以下。本文用半解析法求解二維電勢(shì)方程以及電阻方程的過程準(zhǔn)確,對(duì)于VD-MOSFET寄生導(dǎo)通電阻的研究具有很高的價(jià)值。
[Abstract]:With the rapid development of science and technology, there are electronic products in every corner of life. Semiconductor components are undoubtedly the core of these electronic products, and VD-MOSFET has low driving power, high input impedance and good frequency characteristics. High switching speed and other excellent electrical properties are widely used in power amplification and control of various industrial and military systems. Make it critical in energy control and control at least 50% of the global power consumption of the switch. Because the breakdown voltage of the power device cannot be too low and too high, too high on resistance can lead to high energy consumption. At the same time, the heat emitted will affect the stability of the device. So it is very important to choose the optimal VD-MOSFET structure and doping concentration, which requires us to have a thorough understanding of the basic principles of VD-MOSFET devices. The establishment of the most accurate physical model is of great significance to the study of its characteristics. The literature shows that the establishment of the accurate model of the power semiconductor on-resistance is still in the stage of slow development. Neither the early S.C.Sun approximation model nor the conformal transformation has really given the most accurate analytical solution of its on-resistance. In this paper, the on-resistance of VD-MOSFET devices is studied in depth, according to its current flow characteristics. In this paper, the problem of definite solution and its semi-analytical solution are given, and the two-dimensional model of parasitic on-resistance is established. The content of this paper is composed of the following parts: firstly, the electrical characteristics of VD-MOSFET are analyzed, and the modeling method and solution process of on-resistance are summarized. Compare the advantages and disadvantages of all kinds of research methods. The main methods include analytical method, numerical method and semi-analytical method. Secondly, A two-dimensional model of the non-channel part of the VD-MOSFET on-resistance is established. Firstly, the model structure is divided into the N drift region and the substrate region according to its resistance characteristics. Secondly, the carrier motion in each region is analyzed. The two-dimensional equation of state and boundary conditions are determined. Due to the difference of doping concentration and conducting carrier concentration in each region of VD-MOSFET, In this paper, the connection conditions between regions are set up. Finally, the semi-analytical solution of the potential of each region is obtained by using the method of separating variables and the Fourier orthogonal transformation method, and the parasitic resistance of the non-channel part is obtained from the potential equation. Finally, The potential distribution and resistance of VD-MOSFET parasitic on-resistance model based on semi-analytical method are verified by difference method, and the correctness of the proposed two-dimensional model is fully proved. The potential distribution of the two-dimensional model obtained by the semi-analytical method and the potential distribution obtained by the numerical calculation are very small, and the difference between the potential distributions obtained by the semi-analytical method and the isopotential lines obtained by the three-dimensional potential is very small. The state of the whole potential is stable. Finally, the error between the semi-analytical model resistance of different parameters and the value of resistance obtained by numerical calculation is very small. The basic value is less than 1%. In this paper, the process of solving two-dimensional potential equation and resistance equation by semi-analytical method is accurate, which is of great value for the study of VD-MOSFET parasitic on-resistance.
【學(xué)位授予單位】：安徽大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN386

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本文編號(hào)：1620650