發(fā)布時(shí)間：2018-03-10 11:27

  本文選題：稀磁半導(dǎo)體　切入點(diǎn)：多鐵異質(zhì)結(jié)構(gòu)　出處：《山東大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：稀磁半導(dǎo)體材料在電子器件的制造中有著巨大的應(yīng)用價(jià)值,它結(jié)合了磁性材料的存儲(chǔ)功能以及半導(dǎo)體材料的邏輯處理功能。傳統(tǒng)的稀磁半導(dǎo)體材料通常具有優(yōu)秀的低溫性能,但實(shí)際應(yīng)用要求盡可能提高材料的居里溫度,增大材料的室溫可操作性是一項(xiàng)重要任務(wù)。電場調(diào)控材料的磁性在信息存儲(chǔ)技術(shù)領(lǐng)域有著深遠(yuǎn)的物理意義,越來越多的研究者致力于研究新型的電控磁現(xiàn)象以及研發(fā)可用于電控磁領(lǐng)域的新型材料。多鐵異質(zhì)結(jié)構(gòu)和稀磁半導(dǎo)體材料一直都是電控磁領(lǐng)域的研究熱點(diǎn)內(nèi)容。自從研究者Ohno H等人[101]最早在實(shí)驗(yàn)中觀察到電場改變了(InMn)As的磁性特征后開始,對(duì)稀磁半導(dǎo)體材料的開發(fā)和電控磁現(xiàn)象的研究一直持續(xù)了幾十年。在科學(xué)技術(shù)發(fā)展要求的背景之下,本論文主要是針對(duì)幾種稀磁半導(dǎo)體材料以及具有實(shí)現(xiàn)電場調(diào)控磁性可能性的材料展開初步的研究。研究中需要解決的主要問題有:1.成功制備出多鐵異質(zhì)結(jié)構(gòu)并能夠利用電場調(diào)控其磁性;2.首先能成功制備出具有較高居里溫度的稀磁半導(dǎo)體,其次研究電場對(duì)其磁性的影響,初步探究稀磁半導(dǎo)體電控磁性的可能性。本論文的緒論部分主要介紹了稀磁半導(dǎo)體材料的研究進(jìn)展,著重介紹了砷化鎵基稀磁半導(dǎo)體以及銻化銦基稀磁半導(dǎo)體的研究進(jìn)展以及稀磁半導(dǎo)體材料電控磁現(xiàn)象的研究進(jìn)展。還介紹了多鐵異質(zhì)結(jié)構(gòu)的電控磁現(xiàn)象的研究進(jìn)展。之后概述了當(dāng)前薄膜樣品的主要制備技術(shù)以及對(duì)樣品進(jìn)行測(cè)試和表征的方法。本論文的主要實(shí)驗(yàn)工作如下:多鐵異質(zhì)結(jié)構(gòu)部分主要是通過磁控濺射方法在鐵電性襯底PMN-PT上生長制備了[FeCo/Ag]5納米磁性多層膜。將鐵電材料與鐵磁性材料相結(jié)合,制備[FeCo/Ag]5/PMN-PT出多鐵異質(zhì)結(jié)構(gòu),研究體系的磁電耦合效應(yīng)。通過對(duì)體系施加電場,研究電場對(duì)異質(zhì)結(jié)構(gòu)體系磁性的影響和調(diào)控。實(shí)驗(yàn)中發(fā)現(xiàn)電場的施加可以使[FeCo/Ag]5/PMN-PT體系的磁性產(chǎn)生較大的變化,可以通過對(duì)電壓的調(diào)節(jié)實(shí)現(xiàn)對(duì)[FeCo/Ag]5/PMN-PT多鐵異質(zhì)結(jié)構(gòu)磁性的調(diào)控。之后研究了電壓對(duì)[FeCo(60s)/Ag(2s)]5/PMN-PT異質(zhì)結(jié)構(gòu)的剩余磁化強(qiáng)度的影響,實(shí)現(xiàn)了電壓可對(duì)結(jié)構(gòu)的剩磁進(jìn)行調(diào)控。之后稀磁半導(dǎo)體部分的研究主要介紹了對(duì)砷化鎵(GaAs)基稀磁半導(dǎo)體和銻化銦(InSb)基稀磁半導(dǎo)體材料磁性的實(shí)驗(yàn)工作。在砷化鎵(GaAs)基稀磁半導(dǎo)體材料的研究中:1.向幾組砷化鎵塊狀晶體中通過離子注入的手段分別單獨(dú)注入了不同劑量的鉻(Cr)元素和不同劑量的鈦(Ti)元素后,我們發(fā)現(xiàn)在室溫條件下,樣品即具有了磁性。并且對(duì)每種注入元素而言,材料的磁性都是隨著離子注入劑量的增大而增大;對(duì)樣品的結(jié)構(gòu)進(jìn)行了表征,可以說是成功地獲得了室溫具有磁性的砷化鎵(GaAs)基稀磁半導(dǎo)體材料;2.對(duì)進(jìn)行了離子注入的樣品GaCrAs和GaTiAs進(jìn)行了快速低溫退火處理,測(cè)量退火對(duì)樣品磁性的影響,發(fā)現(xiàn)退火會(huì)使離子注入的樣品的磁性減弱。在銻化銦(InSb)基稀磁半導(dǎo)體材料的研究中:1.向幾組銻化銦塊狀晶體中通過離子注入的方法分別單獨(dú)注入了不同劑量的鉻(Cr)元素和不同劑量的鈦(Ti)元素后,我們發(fā)現(xiàn)在室溫條件下,樣品即具有了磁性。并且對(duì)每種注入元素而言,材料的磁性都是隨著離子注入劑量的增大而增大;對(duì)樣品的結(jié)構(gòu)進(jìn)行了表征,可以說是成功地獲得了室溫具有磁性的銻化銦(InSb)基稀磁半導(dǎo)體材料;3.對(duì)進(jìn)行了離子注入的樣品InCrSb和InTiSb進(jìn)行了快速低溫退火處理,測(cè)量退火對(duì)樣品磁性的影響,發(fā)現(xiàn)退火會(huì)使離子注入的樣品的磁性減弱。
[Abstract]:Dilute magnetic semiconductor material has great application value in the manufacture of electronic devices, it combines the storage function of magnetic material and the logical processing function of semiconductor materials. The traditional dilute magnetic semiconductor materials usually have excellent low temperature performance, but the actual application requirements as much as possible to improve the material Curie temperature, room temperature increase material maneuverability is an important task. The magnetic control material has a physical field of profound significance in the field of information storage technology, more and more researchers working in the electronic magnetic phenomena research and development model can be used to control magnetic field of new materials. Multiferroic heterostructures and dilute magnetic semiconductor materials has been a hot research area the content of electronic magnetic field. Since the researchers Ohno H et al [101] was first observed in experiments of electric field change (InMn) to magnetic characteristics of As, in dilute magnetic semiconductor The research and development of electronic magnetic material phenomena continued for decades. Under the development of science and technology requirements of the background, this paper focuses on several dilute magnetic semiconductor materials and has a preliminary research on the realization of electric control of magnetic materials. The possibility of the main problems to be solved in the research are: 1. successfully prepared more iron heterogeneous structure and be able to use the electric field magnetic; 2. first successfully prepared diluted magnetic semiconductor with high Curie temperature, followed by the study of effect of electric field on the magnetic properties, preliminary study of possibility of diluted magnetic semiconductor electronic magnetic. The introduction part mainly introduces the research progress of dilute magnetic semiconductor material, is introduced progress of magnetic semiconductors and research progress of InSb Based Diluted Magnetic Semiconductors and diluted magnetic semiconductor electronic magnetic phenomena of GaAs based rare also introduced. Research progress of electronic magnetic phenomena. The heterogeneous structure of iron after summarizing the main method of the current system of sample preparation and sample testing and characterization. The main research work of this paper are as follows: multiferroic heterostructures is the main part of the magnetron sputtering method in ferroelectric substrate grown on PMN-PT [FeCo/Ag]5 nano magnetic multilayer film prepared. Combining the ferroelectric and ferromagnetic materials, the preparation of [FeCo/Ag]5/PMN-PT multiferroic heterostructures, the magnetoelectric effect of the system. By applying the electric field to the system, study the effect of electric field on the heterostructure system and magnetic control. Experiments showed that the applied magnetic [FeCo/Ag]5/PMN-PT can make the system produce large changes in electric field. Can the voltage adjusting control of [FeCo/Ag]5/PMN-PT magnetic multiferroic heterostructures. Studying the voltage on [FeCo (60s) /Ag (2S) Effect of residual magnetization of]5/PMN-PT heterostructures, the voltage can be adjusted on the structure of the remanence. After diluted magnetic semiconductor research part mainly introduces on GaAs (GaAs) based diluted magnetic semiconductor (InSb) and indium antimonide based diluted magnetic semiconductor magnetic experimental work. Research on GaAs (GaAs) diluted magnetic semiconductor material: 1. to several groups of GaAs bulk crystal by ion implantation method separately injected different doses of chromium (Cr) elements and different dosage of titanium (Ti) elements, we found that at room temperature, the sample has a magnetic. And for each kind of injection element, material the magnetic is increased with the dose of ion implantation; samples were characterized, can be said to be successful at room temperature with magnetic properties of GaAs (GaAs) diluted magnetic semiconductor materials; 2. were from Injection of the samples GaCrAs and GaTiAs were rapid annealing temperature, annealing effect measurement on magnetism of the samples, it is found that the magnetic annealing causes ion implanted samples decreased. In InSb (InSb) on the base of diluted magnetic semiconductor materials: 1. to several groups of InSb crystal block through ion implantation method separately injection of different doses of chromium (Cr) elements and different dosage of titanium (Ti) elements, we found that at room temperature, the sample has a magnetic. And for each kind of injection elements, magnetic materials are increased with the dose of ion implantation; the structures of the samples were characterized. Can be said to be successful at room temperature with magnetic InSb (InSb) diluted magnetic semiconductor materials; a rapid low temperature annealing treatment was carried out on 3. samples of InCrSb and InTiSb ion implantation, annealing on magnetic measurement The effect of sex is that annealing will weaken the magnetic properties of the sample implanted by ion.

【學(xué)位授予單位】：山東大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN304

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