發(fā)布時間：2018-03-08 21:06

  本文選題：疊層　切入點：有機電致發(fā)光器件　出處：《太原理工大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：疊層有機電致發(fā)光器件（Tandem Organic Light-emitting diodes, TOLED）是指將多個獨立的發(fā)光單元通過電荷生成層連接，在外加電場的作用下電荷生成層產(chǎn)生的電子和空穴分別注入到相鄰發(fā)光單元的電子、空穴傳輸層中，與來自陽極和陰極的空穴、電子在發(fā)光層中復(fù)合，從而實現(xiàn)更高的亮度和電流效率。與傳統(tǒng)的單發(fā)光層器件相比，TOLED具有高亮度、高電流效率和長壽命等優(yōu)點。盡管電荷生成層的研究已經(jīng)取得較大發(fā)展，但仍然存在諸多問題需要解決，如傳統(tǒng)摻雜式的電荷生成層使疊層器件的制備更復(fù)雜、電荷生成層中金屬氧化物通過高溫蒸鍍影響器件性能等。對此，本論文主要圍繞制備高效的電荷生成層展開，以實現(xiàn)高性能的疊層OLED器件。主要研究內(nèi)容如下： 1.以LiF/Al/C60/m-MTDATA作為電荷生成層，首先驗證了電荷的產(chǎn)生發(fā)生在C60/m-MTDATA的界面處，從能級結(jié)構(gòu)上解釋了電荷生成層產(chǎn)生電荷的過程。此外，通過一系列倒置型器件，對電荷生成層的厚度和蒸鍍速率進行了優(yōu)化，Al和C60的厚度均為7nm，Al的蒸鍍速率為1/s。最終采用最優(yōu)的電荷生成層制備了TOLED器件，與單層器件和以LiF(1nm)/Al(7nm)/CuPc(7nm)/m-MTDATA (10nm)作為電荷生成層的疊層器件相比，TOLED器件的最大電流效率和功率效率分別達(dá)到48.1cd/A和19.3lm/W，是單層器件的2.98和1.65倍，且是另一種TOLED器件的1.2和1.13倍。 2.基于發(fā)光單元NPB/Alq3、采用LiF/Al/HAT-CN/m-MTDATA作為電荷生成層制備疊層器件。此電荷生成層均選擇蒸鍍溫度較低的有機材料，且該電荷生成層在可見光范圍內(nèi)的透光率高達(dá)90%以上，且有優(yōu)異的電荷產(chǎn)生和分離能力。通過調(diào)節(jié)HAT-CN和Al的厚度，發(fā)現(xiàn)電荷生成層厚度的不同會對電荷的產(chǎn)生和分離有影響，當(dāng)HAT-CN和Al的厚度分別為9nm和5nm，電荷生成層具有較好的電荷產(chǎn)生和分離能力。最后以優(yōu)化好的電荷生成層制備了疊層器件，和簡單堆疊器件、單層器件進行了對比，疊層器件的最大電流效率與功率效率分別高達(dá)4.84cd/A,1.79lm/W，是單層器件的2.2倍和1.6倍。 3.將Ag應(yīng)用在電荷生成層中，制備了結(jié)構(gòu)為LiF/Ag/HAT-CN/m-MTDATA的電荷生成層。由于Ag不僅具有較好的導(dǎo)電性，而且當(dāng)Ag的厚度為1-2nm時，它可表現(xiàn)出局部等離子體振動，即對可見光的吸收，有助于提高電荷生成層的性能。以NPB/Alq3為發(fā)光單元制備了基于該電荷生成層的疊層器件，通過Ag厚度的優(yōu)化考察了疊層器件的性能，當(dāng)Ag厚度為1nm時，疊層器件最大電流效率可達(dá)6.76cd/A，，是單層器件的2.7倍。此外，我們分別制備了基于上述最優(yōu)的三種電荷生成層LiF/Al/C60/m-MTDATA、LiF/Al/HAT-CN/m-MTDATA、LiF/Ag/HAT-CN/m-MTDATA的藍(lán)光疊層器件，考察了三種器件的電致發(fā)光性能，為以后制備不同性能的疊層器件提供了參考。
[Abstract]:The stacked organic electroluminescent device Tandem Organic Light-emitting diodes( Tole) refers to the connection of several independent light-emitting cells through a charge-generating layer, and the electrons and holes produced by the charge-generating layer are injected into the electrons of the adjacent light-emitting cells respectively under the action of an external electric field. In the hole transport layer, electrons are recombined in the luminescent layer with holes from the anode and cathode to achieve higher luminance and current efficiency. Although the research of charge generation layer has made great progress, but there are still many problems to be solved, such as the traditional doped charge generation layer makes the fabrication of laminated devices more complex. Metal oxides in the charge generation layer affect the device performance through high temperature evaporation. In this paper, we mainly focus on the preparation of high efficiency charge generation layer to achieve high performance stacked OLED devices. The main research contents are as follows:. 1. Using LiF/Al/C60/m-MTDATA as the charge generation layer, it is first verified that the charge generation occurs at the interface of C60 / m-MTDATA, and the process of charge generation in charge generation layer is explained from the energy level structure. In addition, through a series of inverted devices, The thickness of charge generation layer and the rate of evaporation plating are optimized. The thickness of Al and C 60 are both 7nmmAl and the rate of evaporation is 1 / s. Finally, the TOLED device is fabricated by using the optimal layer of charge generation. The maximum current efficiency and power efficiency of LiF(1nm)/Al(7nm)/CuPc(7nm)/m-MTDATA devices are 48.1 cm / A and 19.3lm / W respectively, 2.98 and 1.65 times of that of monolayer devices and 1.2and 1.13 times of that of another TOLED device. 2. Based on the light-emitting unit NPB / Alq3, LiF/Al/HAT-CN/m-MTDATA is used as the charge generation layer to fabricate the laminated devices. All of these layers choose organic materials with low evaporation temperature, and the transmittance of the charge forming layer is over 90% in the visible light range. By adjusting the thickness of HAT-CN and Al, it is found that the difference of the thickness of the charge formation layer has an effect on the generation and separation of charge. When the thickness of HAT-CN and Al are 9 nm and 5 nm, respectively, the charge generation layer has better charge generation and separation ability. Finally, the stacked devices are fabricated with the optimized charge generation layer, and compared with simple stacked devices and single layer devices. The maximum current efficiency and power efficiency of laminated devices are as high as 4.84 CD / A 1.79 m / r W, which is 2.2 times and 1.6 times higher than that of single-layer devices. 3. When Ag is applied to the charge generation layer, a charge forming layer with LiF/Ag/HAT-CN/m-MTDATA structure is prepared. Because Ag not only has good conductivity, but also exhibits local plasma vibration, that is, absorption of visible light, when Ag thickness is 1-2nm. In order to improve the performance of the charge generation layer, the laminated device based on the charge generation layer was fabricated by using NPB/Alq3 as the light-emitting unit. The performance of the laminated device was investigated by optimizing the Ag thickness. When the Ag thickness was 1 nm, the performance of the laminated device was investigated. The maximum current efficiency of the laminated devices can reach 6.76 cdr / A, 2.7 times that of the single-layer devices. In addition, we have fabricated LiF / Al / Al / Al / Al / HAT-CNDATA-LiF / CNAT-CNMTDATA-LiF / AgR / HAT-CNAT-CN-MTDATA based on the above three optimal charge generation layers, and investigated the electroluminescence properties of the three kinds of devices. It provides a reference for the fabrication of laminated devices with different properties.
【學(xué)位授予單位】：太原理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN383.1

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相關(guān)期刊論文 前1條

1 朱明山;陳鵬磊;劉鳴華;;銀/鹵化銀:一類新型等離子體光催化劑[J];化學(xué)進展;2013年Z1期

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