本文選題：太赫茲　切入點(diǎn)：功率合成　出處：《浙江大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：太赫茲是微波領(lǐng)域的前沿研究學(xué)科。在眾多的太赫茲波技術(shù)難題中,如何得到高功率的太赫茲輻射源一直是太赫茲技術(shù)發(fā)展的一大阻礙。近年來(lái),這一問(wèn)題的研究已經(jīng)受到了越來(lái)越多的關(guān)注重視,其中功率合成是解決該問(wèn)題的一種非常有效的方法。 本論文提出了一種基于數(shù)字相位控制在低頻率太赫茲波的功率合成的方法,這種方法可以解決功率合成當(dāng)中相位校準(zhǔn)的問(wèn)題。經(jīng)過(guò)理論上的分析,該方法可以提高最終功率合成的效率。為了證明我們的這種方案的可行性,我們使用渡越時(shí)間雪崩二極管設(shè)計(jì)完成了在0.11THz的原理樣機(jī)。 雪崩二極管只有裝備在合適的腔體中才能保持最佳工作狀態(tài)。我們通過(guò)仿真設(shè)計(jì)以及實(shí)際測(cè)量完成了雪崩二極管的腔體以及阻抗匹配的設(shè)計(jì),使腔體能夠同時(shí)滿足對(duì)射頻激勵(lì)源輸入和低頻率太赫茲輸出上的匹配。 雪崩二極管需要配置一定的激勵(lì)源才能倍頻到目標(biāo)頻率。本文按照激勵(lì)源的具體要求,從原理分析、設(shè)計(jì)方案到圍繞具體芯片搭建電路對(duì)雪崩二極管的射頻激勵(lì)源和直流偏置進(jìn)行了詳細(xì)的說(shuō)明,針對(duì)激勵(lì)源的各項(xiàng)指標(biāo)對(duì)裝配完成的電路進(jìn)行了測(cè)試。 本文對(duì)0.11THz的原理樣機(jī)進(jìn)行了測(cè)量并對(duì)結(jié)果作進(jìn)一步分析。測(cè)量的結(jié)果符合預(yù)期的分析。分析顯示,本文提供的方法能夠應(yīng)用在低頻率太赫茲波段的功率合成上,并提供足夠的相位控制精度。
[Abstract]:Terahertz is a frontier research subject in the field of microwave. Among the numerous technical problems of terahertz wave, how to obtain high power terahertz radiation source has been a big obstacle to the development of terahertz technology. More and more attention has been paid to this problem, and power synthesis is a very effective method to solve the problem. In this paper, a power combination method based on digital phase control in low frequency terahertz wave is proposed. This method can solve the problem of phase calibration in power synthesis. This method can improve the efficiency of the final power synthesizer. In order to prove the feasibility of our scheme, we designed a prototype at 0.11THz using a transition time avalanche diode. Avalanche diodes can work best only when equipped in a suitable cavity. We have designed the cavity and impedance matching of the avalanche diode by simulation design and actual measurement. The cavity can satisfy the matching of RF excitation source input and low frequency terahertz output simultaneously. Avalanche diodes need to be equipped with a certain excitation source to double the frequency to the target frequency. In the design scheme, the RF excitation source and DC bias of avalanche diode are explained in detail around the circuit built around the specific chip, and the circuit completed by assembly is tested according to the parameters of the excitation source. In this paper, the principle prototype of 0.11THz is measured and the results are further analyzed. The results are in line with the expected analysis. The analysis shows that the method provided in this paper can be applied to the low frequency terahertz band power synthesis. And provide enough phase control accuracy.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN73

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本文編號(hào)：1580794