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  本文選題：多量子阱(超晶格)結(jié)構(gòu)　切入點：雪崩光電二極管　出處：《北京工業(yè)大學(xué)》2016年碩士論文　論文類型：學(xué)位論文

【摘要】：雪崩光電二極管(avalanche photodiode,簡記為APD)由于其固有的倍增機制,能夠探測微弱的光信號并且器件結(jié)構(gòu)簡單、成本低、體積小,使得它用作光接收器具有更大的優(yōu)勢。APD要實現(xiàn)高速、高靈敏度、低噪聲,要求用作倍增層材料的電子離化率α和空穴離化率β的差異盡可能大。多量子阱(超晶格)結(jié)構(gòu)中異質(zhì)材料能帶帶邊的不連續(xù)性能夠使電子離化幾率相對于空穴離化幾率顯著增大。本論文基于碰撞離化理論研究了異質(zhì)材料超晶格結(jié)構(gòu)對載流子離化率的作用,根據(jù)用于長波長(1.3~1.65μm)的InP基光電探測器的性能要求結(jié)合超晶格的能帶結(jié)構(gòu)和材料性質(zhì)設(shè)計了具有In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As超晶格結(jié)構(gòu)的雪崩光電二極管(superlattice avalanche photodiode,簡記為SAPD)。本文以實現(xiàn)高信噪比的長波長SAPD為目的,研究工作主要包括以下幾個方面:(1)在碰撞離化理論中討論了離化閾值的重要作用,為了進行碰撞過程的宏觀描述,引入了雪崩增益的離化系數(shù);對超晶格結(jié)構(gòu)對載流子離化率的作用機理進行了詳細的公式推導(dǎo)和理論分析。(2)利用半導(dǎo)體仿真工具對器件結(jié)構(gòu)進行優(yōu)化,分析不同結(jié)構(gòu)參數(shù)對器件性能的影響,得到了低隧道電流、高倍增因子的超晶格結(jié)構(gòu)雪崩層;根據(jù)電場分布方程模擬了器件二維電場分布對電荷層厚度及摻雜的依賴關(guān)系;基于量子效率和器件響應(yīng)速度優(yōu)化了吸收層的結(jié)構(gòu)參數(shù)。(3)進行材料的生長條件優(yōu)化實驗,得到高質(zhì)量的外延材料;解決In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As超晶格材料外延生長的經(jīng)驗問題;進行關(guān)鍵摻雜技術(shù)的調(diào)試;完成具有超晶格結(jié)構(gòu)的雪崩光電二極管器件的外延生長。(4)進行器件的光電特性測試,與吸收層、漸變層、電荷層、倍增層分離的雪崩光電二極管做比較,驗證超晶格結(jié)構(gòu)對于提升雪崩光電二極管性能的作用。
[Abstract]:Avalanche photodiodes (APD) because of its inherent multiplying mechanism, it can detect weak optical signals, and the device is simple in structure, low in cost and small in size, which makes it have a greater advantage as an optical receiver. APD has to achieve high speed. High sensitivity, low noise, The difference between electron ionization rate 偽 and hole ionization rate 尾 is as great as possible. The band edge discontinuity of heterogeneous materials in multiple quantum wells (superlattices) can make the electron ionization probability relative to the hole. The effect of superlattice structure on carrier ionization rate is studied based on collision ionization theory. According to the performance requirements of InP based photodetectors for long wavelength 1.3n 1.65 渭 m) combined with the energy band structure and material properties of superlattices, an avalanche photodiode with In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As superlattice structure is designed for superlattice avalanche photodiodes. Ratio of the long wavelength SAPD for the purpose, In order to describe the collision process, the ionization coefficient of avalanche gain is introduced. The mechanism of the superlattice structure acting on the carrier ionization rate is derived and analyzed in detail. (2) the semiconductor simulation tool is used to optimize the device structure, and the influence of different structure parameters on the device performance is analyzed. The avalanche layer of superlattices with low tunneling current and high multiplication factor is obtained and the dependence of two-dimensional electric field distribution on charge layer thickness and doping is simulated according to the electric field distribution equation. Based on the quantum efficiency and the response speed of the device, the structure parameters of the absorber layer are optimized to optimize the growth conditions of the material to obtain the high quality epitaxial material, and to solve the problem of the epitaxial growth of the In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As superlattice material. The epitaxial growth of avalanche photodiode devices with superlattice structure. The effect of superlattice structure on the performance of avalanche photodiodes is verified by comparison of avalanche photodiodes with separated multiplication layers.
【學(xué)位授予單位】：北京工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2016
【分類號】：TN312.7
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本文編號：1578171