本文選題：功率半導(dǎo)體器件　切入點(diǎn)：逆導(dǎo)型IGBT　出處：《電子科技大學(xué)》2015年碩士論文　論文類(lèi)型：學(xué)位論文

【摘要】：IGBT(Insulated Gate Bipolar Transistor),作為第三代電力電子產(chǎn)品,是當(dāng)前功率半導(dǎo)體中最重要的器件之一。IGBT以其優(yōu)秀的綜合性能廣泛應(yīng)用于家用電器、交通運(yùn)輸、電機(jī)控制、智能電網(wǎng)等諸多領(lǐng)域。自發(fā)明以來(lái),小型化、集成化一直是IGBT的一個(gè)重要發(fā)展趨勢(shì)。在很多應(yīng)用場(chǎng)合中,IGBT通常需要反向并聯(lián)一個(gè)二極管來(lái)實(shí)現(xiàn)續(xù)流,由于處于不同的封裝中,不可避免地引入了寄生電阻、電感等,影響電路性能。單片集成二極管的RC IGBT可以消除這些寄生參數(shù)的影響,提高器件的可靠性。由于我國(guó)的IGBT起步較晚,制造工藝相對(duì)落后,RC IGBT產(chǎn)品都是如英飛凌、ABB等國(guó)外大公司推出的。國(guó)內(nèi)至今沒(méi)有自主品牌的產(chǎn)品,相關(guān)學(xué)術(shù)研究也非常缺乏。本文基于此,進(jìn)行1200V RC Trench IGBT的設(shè)計(jì)與分析,為進(jìn)一步的研究以及生產(chǎn)制造提供參考。本文主要內(nèi)容如下:1、結(jié)合Trench IGBT理論,對(duì)RC Trench IGBT進(jìn)行介紹,分析其工作原理、Snapback現(xiàn)象、正向阻斷情況以及開(kāi)關(guān)特性。從原理和模型出發(fā),深入研究影響RC IGBT的Snapback現(xiàn)象的原因并提出解決方案。2、設(shè)計(jì)1200V RC Trench IGBT的工藝流程,通過(guò)增加一張掩膜板來(lái)完成集電極N型區(qū)域的制造。結(jié)合工藝,進(jìn)行RC Trench IGBT的元胞結(jié)構(gòu)、終端結(jié)構(gòu)以及版圖的設(shè)計(jì)。所設(shè)計(jì)的1200V RC Trench IGBT不存在Snapback現(xiàn)象,擊穿電壓滿(mǎn)足設(shè)計(jì)要求,導(dǎo)通壓降低于2.5V,閾值電壓4V-5.5V。
[Abstract]:IGBT(Insulated Gate Bipolar Transistor, as the third generation power electronic product, is one of the most important devices in the current power semiconductor. Since the invention of smart grid, miniaturization and integration has been an important development trend of IGBT. The parasitic resistance, inductance and so on are inevitably introduced to affect the circuit performance. The RC IGBT of monolithic integrated diode can eliminate the influence of these parasitic parameters and improve the reliability of the device. The manufacturing process is relatively backward and the RC IGBT products are all developed by large foreign companies such as Infineon ABB. There are no independent brands in our country, and the relevant academic research is also very lacking. Based on this, this paper designs and analyzes the 1200V RC Trench IGBT. The main contents of this paper are as follows: 1. In combination with Trench IGBT theory, RC Trench IGBT is introduced, its working principle is analyzed, including Snapback phenomenon, forward blocking and switching characteristics. In this paper, the causes of Snapback phenomenon affecting RC IGBT are studied in depth, and the solution. 2. The process flow of 1200V RC Trench IGBT is designed. By adding a mask plate to complete the manufacture of N region of collector, the cellular structure of RC Trench IGBT is carried out by combining the process. The design of terminal structure and layout. The 1200V RC Trench IGBT has no Snapback phenomenon, the breakdown voltage meets the design requirements, the on-voltage drop is lower than 2.5V, and the threshold voltage is 4V-5.5V.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN322.8

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 張金平;李澤宏;任敏;陳萬(wàn)軍;張波;;絕緣柵雙極型晶體管的研究進(jìn)展[J];中國(guó)電子科學(xué)研究院學(xué)報(bào);2014年02期

，

本文編號(hào)：1577900