發(fā)布時(shí)間：2018-03-07 02:14

  本文選題：碳化硅　切入點(diǎn)：MOSFET　出處：《華北電力大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：功率SiC MOSFET器件具有高擊穿場(chǎng)強(qiáng)、高耐受溫度、低損耗、高頻率等優(yōu)點(diǎn),已經(jīng)成為新型功率半導(dǎo)體器件研究開發(fā)的主流。隨著其應(yīng)用范圍不斷擴(kuò)展,SiC MOSFET靜態(tài)特性參數(shù)和電容參數(shù)導(dǎo)致串并聯(lián)器件均壓均流不平衡的問題也越發(fā)受到重視,SiC MOSFET驅(qū)動(dòng)電路設(shè)計(jì)以及一次回路的頻率分析也與這些參數(shù)息息相關(guān)。因此在不同溫度范圍內(nèi)測(cè)量器件的靜態(tài)參數(shù)和電容參數(shù)愈顯重要。本文針對(duì)于Cree公司生產(chǎn)的型號(hào)為C2M0080120D的N溝道增強(qiáng)型SiCMOSFET器件,分析闡述SiC MOSFET器件的工作原理和物理機(jī)制,總結(jié)場(chǎng)效應(yīng)管靜態(tài)參數(shù)和電容參數(shù)測(cè)試的相關(guān)標(biāo)準(zhǔn)并提煉出針對(duì)性的測(cè)試方法,利用Agilent B1505A以及高低溫試驗(yàn)箱搭建了實(shí)驗(yàn)平臺(tái),對(duì)Cree生產(chǎn)的SiC MOSFET的電容參數(shù)以及寬溫度范圍內(nèi)的靜態(tài)特性參數(shù)展開測(cè)試,并對(duì)可能產(chǎn)生的誤差進(jìn)行修正以確保測(cè)試結(jié)果的準(zhǔn)確性。分析對(duì)比不同溫度下,SiC器件靜態(tài)特性參數(shù)的變化規(guī)律及其性能的改變,并從物理機(jī)制上解釋各參數(shù)隨著溫度的變化規(guī)律。本文結(jié)合國(guó)網(wǎng)智能電網(wǎng)研究院項(xiàng)目"1200V SiC MOSFET器件制備及應(yīng)用特性關(guān)鍵技術(shù)研究”,重點(diǎn)研究了器件在寬溫度范圍內(nèi)的特性參數(shù)變化,為建立完善準(zhǔn)確的SiC MOSFET器件仿真模型,以及后續(xù)研發(fā)的器件參數(shù)和可靠性測(cè)試提供具體方法。
[Abstract]:Power SiC MOSFET devices have the advantages of high breakdown field strength, high temperature tolerance, low loss, high frequency, etc. It has become the mainstream in the research and development of new power semiconductor devices. With the continuous expansion of the application range of sic MOSFET static characteristic parameters and capacitance parameters, the problem of voltage and current sharing imbalance of series-parallel devices has been paid more and more attention to. The design of MOSFET drive circuit and the frequency analysis of primary circuit are also closely related to these parameters. Therefore, it is more and more important to measure the static parameters and capacitance parameters of devices in different temperature range. This paper is aimed at the type produced by Cree Company. N-channel enhanced SiCMOSFET device, C2M0080120D, This paper analyzes the working principle and physical mechanism of SiC MOSFET device, summarizes the relevant standards of FET static parameter and capacitance parameter testing, and extracts the relevant testing methods. The experimental platform is built by using Agilent B1505A and high and low temperature test box. The capacitance parameters of SiC MOSFET produced by Cree and the static characteristic parameters of wide temperature range are tested. The possible errors are corrected to ensure the accuracy of the test results. The variation of the static characteristic parameters and the performance of sic devices at different temperatures are analyzed and compared. The variation of parameters with temperature is explained in terms of physical mechanism. In this paper, the key technologies of fabrication and application characteristics of 1200V SiC MOSFET devices are studied in the wide temperature range in the light of the smart grid research project "1200V SiC MOSFET device fabrication and key technology research". Changes in the characteristic parameters of, It provides a concrete method for establishing an accurate simulation model of SiC MOSFET device, as well as testing the device parameters and reliability of the following research and development.
【學(xué)位授予單位】：華北電力大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN386

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