本文選題：MOSFET　切入點(diǎn)：開關(guān)過程　出處：《吉林大學(xué)》2016年碩士論文　論文類型：學(xué)位論文

【摘要】：在電力變頻器和開關(guān)電源的設(shè)計(jì)中,在高性能固態(tài)開關(guān)裝置的設(shè)計(jì)和實(shí)現(xiàn)中,MOSFET和IGBT的開關(guān)性能至關(guān)重要,要想獲得最優(yōu)化的開關(guān)性能,需要對(duì)各個(gè)方面的所有細(xì)節(jié)進(jìn)行細(xì)致的分析和考量。尤其當(dāng)開關(guān)速度正變得越來越快的時(shí)候,分散于固態(tài)器件各PN結(jié)及耗盡層之間的寄生電容,電阻PCB電路板中的寄生電感都會(huì)在開關(guān)的瞬變過程中起重要作用,改變電路響應(yīng)模式,使得開關(guān)曲線性能劣化,驅(qū)動(dòng)電壓和電流震蕩,器件誤導(dǎo)通或誤關(guān)斷等。在本篇論文中,我將詳細(xì)研究MOSFET的開關(guān)暫態(tài)過程,在第一二章中對(duì)器件內(nèi)部分布于各結(jié)之間的寄生電容電阻,及PCB線路的寄生電感等分布參數(shù)進(jìn)行建模。在第三章中對(duì)MOSFET進(jìn)行開關(guān)暫態(tài)過程的電路建模和Matlab仿真計(jì)算,在第四章中設(shè)計(jì)實(shí)驗(yàn)電路進(jìn)行驗(yàn)證,分析和總結(jié)。在本文中,影響MOSFET的開關(guān)動(dòng)態(tài)過程的各重要因素被一一逐個(gè)分析,主要包括柵源極寄生電容,柵漏極寄生電容,米勒平臺(tái)的負(fù)反饋效應(yīng),驅(qū)動(dòng)電路的寄生電感及驅(qū)動(dòng)電路的電壓電流和拓?fù)浣Y(jié)構(gòu)等。各個(gè)因素的作用通過仿真和實(shí)驗(yàn)兩方面來進(jìn)行驗(yàn)證,最后在第五章中總結(jié)出要獲得高性能MOSFET和IGBT開關(guān)暫態(tài)過程所需要考慮的問題,及驅(qū)動(dòng)電路設(shè)計(jì)的應(yīng)該注意的事項(xiàng)和原則。
[Abstract]:In the design of power converter and switching power supply, in the design and implementation of high performance solid-state switching device, the switching performance of MOSFET and IGBT is very important. All the details need to be carefully analyzed and considered. Especially as the switching speed becomes faster and faster, parasitic capacitors scattered between the PN junctions and depletion layers of solid-state devices. Parasitic inductance in resistance PCB circuit board will play an important role in the transient process of switch, changing the circuit response mode, making the performance of the switch curve worse, driving voltage and current oscillation, device misleading or switching off, etc. In this paper, I will study the switching transient process of MOSFET in detail. In Chapter 12th, I will study the parasitic capacitance resistors that are distributed between the various junctions in the device. In chapter 3, the circuit modeling and Matlab simulation of switching transient process of MOSFET are carried out. In Chapter 4th, the experimental circuit is designed to verify, analyze and summarize. The important factors that affect the switching dynamic process of MOSFET are analyzed one by one, mainly including the parasitic capacitance of gate source, the parasitic capacitance of gate drain, the negative feedback effect of Hans Muller platform. The parasitic inductance of driving circuit, voltage, current and topology of driving circuit, etc. The function of each factor is verified by simulation and experiment. Finally, in Chapter 5th, the problems to be considered in the transient process of MOSFET and IGBT switches with high performance are summarized, as well as the matters and principles that should be paid attention to in the design of drive circuits.
【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN386

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本文編號(hào)：1570011