本文選題：真空腔室　切入點(diǎn)：壓強(qiáng)測(cè)量　出處：《真空科學(xué)與技術(shù)學(xué)報(bào)》2016年02期 　論文類型：期刊論文

【摘要】：集成電路(IC)裝備工藝腔室內(nèi)流場(chǎng)的均勻性是影響鍍膜質(zhì)量的關(guān)鍵因素。本文通過(guò)控制真空腔室入口處N_2流量(140,230,320 mL/min(標(biāo)準(zhǔn)狀態(tài)))和出氣口處壓強(qiáng)值(36,45,55 Pa)來(lái)設(shè)置實(shí)驗(yàn),采用壓力管法測(cè)量低壓腔室內(nèi)任一點(diǎn)的壓強(qiáng)值和薄膜規(guī)直接測(cè)量腔壁、出氣口的壓強(qiáng)值來(lái)實(shí)現(xiàn)腔室內(nèi)壓強(qiáng)分布的研究和壓差的測(cè)量。討論了腔壁與出氣口之間的壓差對(duì)壓力管法的測(cè)量誤差的影響;選擇了二級(jí)勻氣裝置對(duì)進(jìn)入腔室內(nèi)的氣體進(jìn)行布?xì)?通過(guò)比較腔室內(nèi)同一水平面上各點(diǎn)與出氣口之間的壓差是否恒定來(lái)分析二級(jí)勻氣盤的勻氣效果。試驗(yàn)研究發(fā)現(xiàn):在距離腔室中心150 mm的范圍內(nèi),二級(jí)勻氣裝置的布?xì)庑Ч黠@;本文采用的壓力管法測(cè)量腔室內(nèi)壓強(qiáng)的誤差與腔室進(jìn)氣量和腔室內(nèi)流速存在內(nèi)在聯(lián)系。研究結(jié)果對(duì)IC裝備設(shè)計(jì)及工藝控制有一定的指導(dǎo)意義。
[Abstract]:The uniformity of flow field in the process chamber of integrated circuit (IC) equipment is the key factor that affects the quality of the coating. The experiment is carried out by controlling the flow rate of N2 at the entrance of the vacuum chamber and the pressure at the outlet of the vacuum chamber by controlling the flow rate of N2 at the entrance of the vacuum chamber and by controlling the flow rate of 320 mL / min (standard state) and the pressure at the outlet of the air outlet. Pressure tube method is used to measure the pressure at any point in the chamber and the film gauge is used to measure the wall of the cavity directly. The pressure value of the outlet is used to study the pressure distribution and the measurement of the pressure difference in the chamber. The influence of the pressure difference between the cavity wall and the outlet on the measurement error of the pressure tube method is discussed. A two-stage uniform gas device is selected to distribute the gas entering the chamber. By comparing whether the pressure difference between the points on the same horizontal plane and the outlet of the chamber is constant or not, this paper analyzes the gas uniformity effect of the two-stage uniform gas disk. The experimental study shows that the gas distribution effect of the two-stage uniform gas device is obvious in the range of 150 mm from the center of the chamber; The pressure tube method used in this paper is used to measure the pressure error of the chamber, which is related to the air intake and the flow velocity of the chamber. The research results have some guiding significance for IC equipment design and process control.
【作者單位】： 五邑大學(xué)機(jī)電工程學(xué)院;江門市CAD/CAM工程技術(shù)研發(fā)中心;
【基金】：國(guó)家科技重大專項(xiàng)資助項(xiàng)目(No.2011ZX02403-004)
【分類號(hào)】：TN407

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本文編號(hào)：1566386