本文關(guān)鍵詞： 氫化物氣相外延 GaN單晶 自支撐 激光剝離　出處：《天津大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：氮化鎵(GaN)是第三代寬禁帶半導(dǎo)體材料研究中的熱點(diǎn)。在光學(xué)性質(zhì)方面,氮化鎵材料為直接帶隙,禁帶寬度為3.4eV,其合金帶隙覆蓋了從紅色到紫色的光譜范圍,尤其適合在紫外、藍(lán)光器件方面的應(yīng)用;在物理化學(xué)性質(zhì)方面,GaN具有化學(xué)穩(wěn)定性好、不易被腐蝕,熔化溫度高、熱傳導(dǎo)性能優(yōu)良、抗輻射等優(yōu)點(diǎn);在電學(xué)性質(zhì)方面,GaN具有很高的擊穿電壓和電子遷移率,且介電常數(shù)低,決定了氮化鎵器件將具有很高的性能。這些優(yōu)點(diǎn)使氮化鎵在光電子、微電子器件領(lǐng)域具有重要的應(yīng)用潛力。本文首先對(duì)GaN材料的發(fā)展、常用襯底、主要表征手段進(jìn)行了綜述介紹,進(jìn)而對(duì)在藍(lán)寶石襯底上氫化物氣相外延(HVPE)法生長(zhǎng)GaN進(jìn)行了工藝研究,研究?jī)?nèi)容包括高質(zhì)量厚層GaN單晶生長(zhǎng)工藝研究、降低生長(zhǎng)GaN單晶層彎曲度研究以及襯底分離技術(shù)研究。主要研究成果如下:(1)通過(guò)選用不同掩膜圖形開(kāi)展試驗(yàn)研究,確定了條形掩膜圖形更利于初期掩膜長(zhǎng)合,可有效抑制位錯(cuò)延伸,對(duì)降低位錯(cuò)密度效果明顯。(2)通過(guò)V/III比例、生長(zhǎng)溫度、生長(zhǎng)壓力、載氣等生長(zhǎng)工藝參數(shù)的調(diào)節(jié),分析各參數(shù)對(duì)晶體質(zhì)量、晶片彎曲的影響,最終生長(zhǎng)出厚度大于60μm、表面光滑無(wú)坑,位錯(cuò)密度在106cm-2以下,表面粗糙度Ra(2μmx2μm)在0.1nm以下的厚層GaN基片。(3)生長(zhǎng)出厚度大于300μm超厚層GaN基片,采用激光剝離技術(shù)進(jìn)行襯底去除,通過(guò)試驗(yàn)結(jié)果驗(yàn)證,詳細(xì)介紹了影響激光分離的因素,最終獲得完整2英寸自支撐GaN單晶襯底材料。(4)采用插入層技術(shù),結(jié)合邊緣保護(hù)技術(shù)實(shí)現(xiàn)超厚層GaN基片自剝離,獲得厚度大于450μm,直徑45mm的自支撐GaN單晶襯底材料。
[Abstract]:Gallium nitride (gan) is a hot spot in the research of the third generation wide band gap semiconductor materials. In terms of optical properties, gallium nitride material has a direct band gap and a band gap of 3.4 EV. The alloy band gap covers the spectrum range from red to purple, and is especially suitable for UV. In physical and chemical properties, gan has the advantages of good chemical stability, low corrosion resistance, high melting temperature, excellent thermal conductivity and radiation resistance. In terms of electrical properties, gan has high breakdown voltage, electron mobility and low dielectric constant, which determines the high performance of gallium nitride devices. These advantages make gallium nitride in photoelectron. Microelectronic devices have important application potential. Firstly, the development of GaN materials, common substrates and main characterization methods are reviewed. Furthermore, the growth process of GaN on sapphire substrate by hydride vapor phase epitaxy (Hve) method was studied. The research contents include the growth process of GaN single crystal with high quality and thick layer. The main research results are as follows: (1) by selecting different mask patterns to carry out experimental research, it is determined that the strip mask pattern is more favorable to the initial mask length and combination. It can effectively restrain dislocation extension, and has obvious effect on reducing dislocation density. (2) by adjusting the growth process parameters such as V / III ratio, growth temperature, growth pressure, carrier gas and so on, the effects of these parameters on crystal quality and wafer bending are analyzed. Finally, the thick GaN substrate with thickness more than 60 渭 m, smooth surface without pits, dislocation density below 106 cm-2 and surface roughness Ra(2 渭 mx2 渭 m) was grown. The GaN substrate with thickness more than 300 渭 m was grown. The substrate was removed by laser stripping technique. The experimental results show that the factors affecting laser separation are introduced in detail. Finally, the complete 2 inch self-supporting GaN substrate material. The insertion layer technique and edge protection technology are used to realize the self-stripping of the super-thick GaN substrate. Self-supporting GaN substrates with thickness of more than 450 渭 m and diameter of 45 mm were obtained.
【學(xué)位授予單位】：天津大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304.05

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