本文關(guān)鍵詞： InP HEMT 小信號(hào)模型 大信號(hào)模型　出處：《電子科技大學(xué)》2016年碩士論文　論文類型：學(xué)位論文

【摘要】：InP基高電子遷移率晶體管(HEMT)由于自身具有高的電子遷移率、高的功率增益、低的噪聲系數(shù)以及低功耗等特點(diǎn),成為毫米波單片集成電路(MMIC)以及太赫茲單片集成電路(TMIC)領(lǐng)域最理想的三端電子器件之一。而在MMIC或者TMIC的設(shè)計(jì)過(guò)程中,建立準(zhǔn)確的器件模型是至關(guān)重要的。本文基于自主研發(fā)的InP基HEMT器件,利用多種測(cè)試手段獲取器件的直流性能、交流性能、脈沖性能,綜合研究了器件模型的由來(lái)并建立了準(zhǔn)確的小信號(hào)模型。隨后研究了陷阱電荷給器件帶來(lái)的一些影響。最后在前面兩部分的研究?jī)?nèi)容的基礎(chǔ)上利用EEHEMT模型,對(duì)器件的大信號(hào)模型進(jìn)行了研究,從而獲得了一個(gè)較為準(zhǔn)確的器件大信號(hào)模型。取得的研究成果如下:1.根據(jù)對(duì)InP HEMT器件原理的綜合分析,利用傳統(tǒng)的16個(gè)參數(shù)的HEMT器件小信號(hào)模型,優(yōu)化了提取本征參數(shù)的算法。在Dambrine提出的本征Y參數(shù)公式基礎(chǔ)上,直接推導(dǎo)了器件模型的本征元件參數(shù),相比較Dambrine引入一個(gè)假設(shè)條件而得到的計(jì)算結(jié)果更為精確。2.由于InP HEMT器件本身固有的一些效應(yīng),在某些偏置電壓下測(cè)得的S參數(shù)會(huì)發(fā)生一些反常的現(xiàn)象。此時(shí)傳統(tǒng)16個(gè)參數(shù)的小信號(hào)模型無(wú)法擬合。根據(jù)對(duì)器件物理和二端口網(wǎng)絡(luò)知識(shí)的分析,引入兩個(gè)特殊的支路進(jìn)入傳統(tǒng)的小信號(hào)模型。根據(jù)傳統(tǒng)模型和新模型的對(duì)比,可以看出新模型能更好地模擬器件的小信號(hào)特性。3.對(duì)于HEMT器件存在的陷阱電荷問(wèn)題,通過(guò)脈沖IV測(cè)試裝置對(duì)器件輸出電流的測(cè)試,表征了輸出電流受脈沖寬度和柵端靜態(tài)電壓的影響規(guī)律。從而揭示了器件內(nèi)部的陷阱電荷對(duì)電流崩塌現(xiàn)象的作用機(jī)制,為下一步建立大信號(hào)模型中對(duì)器件陷阱電荷的考慮提供了理論基礎(chǔ)。4.針對(duì)國(guó)內(nèi)缺乏大信號(hào)模型指導(dǎo)電路設(shè)計(jì)的現(xiàn)狀。以EEHEMT模型作為基礎(chǔ),利用IC-CAP軟件來(lái)對(duì)器件的大信號(hào)模型參數(shù)進(jìn)行提取,然后在ADS軟件工具里進(jìn)行優(yōu)化仿真,最終建立了一個(gè)較為準(zhǔn)確的In P HEMT器件的大信號(hào)模型,該模型能夠很好地?cái)M合器件的直流性能和交流性能。為下一步InP HEMT器件在MMIC電路中的設(shè)計(jì)打下了基礎(chǔ)。
[Abstract]:Because of its high electron mobility, high power gain, low noise coefficient and low power consumption, InP based high electron mobility transistors (HEMTs) have many advantages, such as high electron mobility, high power gain, low power consumption and so on. It has become one of the most ideal three-terminal electronic devices in the field of millimeter-wave monolithic integrated circuit (MMC) and terahertz monolithic integrated circuit (THz). In the design of MMIC or TMIC, It is very important to establish an accurate device model. Based on the self-developed InP based HEMT device, the DC performance, AC performance and pulse performance of the device are obtained by a variety of test methods. The origin of the device model is comprehensively studied and an accurate small-signal model is established. Then some effects of trap charge on the device are studied. Finally, the EEHEMT model is used on the basis of the previous two parts of the research. The large signal model of the device is studied, and a more accurate large signal model of the device is obtained. The research results are as follows: 1. According to the comprehensive analysis of the principle of InP HEMT device, The algorithm of extracting intrinsic parameters is optimized by using the traditional small-signal model of 16-parameter HEMT devices. Based on the intrinsic Y parameter formula proposed by Dambrine, the intrinsic component parameters of the device model are derived directly. The calculated results are more accurate than those obtained by introducing a hypothetical condition into Dambrine. 2. Because of some inherent effects of InP HEMT devices, Some abnormal phenomena will occur in the S parameters measured under some bias voltages. At this time, the traditional small-signal model of 16 parameters can not be fitted. Based on the analysis of device physics and two-port network knowledge, Two special branches are introduced into the traditional small-signal model. According to the comparison between the traditional model and the new model, it can be seen that the new model can better simulate the small-signal characteristics of the device. By measuring the output current of the device with pulse IV, the effect of the output current on the pulse width and the static voltage at the gate end is characterized. Thus, the mechanism of the trap charge acting on the current collapse is revealed. This paper provides a theoretical basis for the consideration of device trap charge in the next big signal model. 4. Aiming at the lack of large signal model to guide the circuit design in China, the paper takes the EEHEMT model as the foundation. The large signal model parameters of the device are extracted by using IC-CAP software, and then optimized and simulated in the ADS software tool. Finally, a more accurate large signal model of in P HEMT device is established. The model can fit the DC performance and AC performance of the device, which lays a foundation for the next design of InP HEMT device in MMIC circuit.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN386

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