本文關(guān)鍵詞： 高頻軟磁薄膜 鐵磁共振 單軸磁各向異性 磁電耦合 渦旋磁各向異性　出處：《青島大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：當(dāng)今集成電路(IC,Integrated circuits)電子產(chǎn)品飛正向著輕薄短小、高頻化、寬頻化、低功耗和多功能化趨勢(shì)飛速發(fā)展,這對(duì)電子器件和作為電子元器件的基礎(chǔ)材料提出了更高的要求。因?yàn)殡姼性叽绱?難以集成到廣泛應(yīng)用的集成電路中。隨著薄膜技術(shù)和納米科學(xué)的進(jìn)步,能夠適用于集成電路平面構(gòu)型的軟磁薄膜,因?yàn)榭梢源蟠鬁p小電感尺寸,而使得平面型微磁電感有望集成到集成電路中。平面微磁電感要求相應(yīng)的軟磁薄膜具有高的鐵磁共振頻率、磁導(dǎo)率、損耗和集成電路IC兼容性制備工藝。為了在IC兼容工藝條件下,制備良好的軟磁薄膜,本論文以飽和磁化強(qiáng)度MS大的FeCo基合金為母體,利用自主研發(fā)的成分梯度濺射方法添加Al2O3,獲得了性能優(yōu)良的高頻磁性薄膜材料。具體的研究工作主要有:(1)利用成分梯度濺射法(CGS,Composition gradient sputtering)和磁電耦合法(MEC,magnetoelectric coupling)相結(jié)合,兩步提升鐵磁共振頻率。首先,在單晶Si片上,利用成分梯度濺射方法,制備了具有Al和O成分梯度的單軸磁各向異性FeCo AlO薄膜,其零偏置磁場(chǎng)條件下的鐵磁共振頻率fFMR高達(dá)5.4 GHz;然后,選擇綜合性能優(yōu)越的區(qū)間,在相同的條件下,用(011)解理的PZN-PT鐵電單晶襯底代替Si襯底的相應(yīng)位置,在PZN-PT襯底上濺射得到FeCoAlO成分梯度薄膜復(fù)合體系。令人興奮的是該復(fù)合體系的鐵磁共振頻率fFMR在成分梯度誘導(dǎo)的應(yīng)力梯度和磁電耦合作用的雙重作用下,從3.4 GHz提升到9.6 GHz,單軸磁各向異性場(chǎng)HK也從100 Oe提高到735 Oe。研究表明,CGS和MEC相結(jié)合,可以實(shí)現(xiàn)鐵磁共振頻率的協(xié)同增強(qiáng),將鐵磁共振頻率提高的X波段,為FeCo Al O薄膜在微波磁性器件中的應(yīng)用前景奠定基礎(chǔ)。(2)宏觀渦旋磁各向異性的構(gòu)建。利用成分梯度濺射方法構(gòu)建了具有宏觀渦旋磁各向異性結(jié)構(gòu)的納米晶CoFeAlO CGS薄膜。由于切向和徑向殘余應(yīng)力的競(jìng)爭(zhēng)作用,使得總應(yīng)力由張應(yīng)力向壓應(yīng)力過(guò)渡,從而導(dǎo)致易磁化軸由徑向(R方向)逐漸過(guò)渡到切向(T方向),于是樣品呈現(xiàn)出宏觀渦旋磁各向異性的特征。CGS方法沉積的FeCo AlO成分梯度薄膜表現(xiàn)出良好的高頻鐵磁特性與高磁導(dǎo)率約100,截止頻率在2 GHz和Qm因子超過(guò)50。
[Abstract]:Nowadays, IC Integrated Circuit (IC) electronic products are developing rapidly towards the trend of being short, thin and short, high frequency, wide frequency, low power consumption and multifunction. This puts forward higher requirements for electronic devices and the basic materials used as electronic components. Because of the large size of inductors, it is difficult to integrate into widely used integrated circuits. With the development of thin film technology and nanoscience, Soft magnetic thin films that can be applied to planar configurations of integrated circuits, because they can greatly reduce the size of inductors, The planar micromagnetoelectric inductance is expected to be integrated into the integrated circuit. The planar micromagnetoelectric inductance requires the corresponding soft magnetic thin film to have high ferromagnetic resonance frequency, magnetic permeability, In order to prepare good soft magnetic thin films under IC-compatible conditions, FeCo alloy with high saturation magnetization is used as the matrix in this thesis. High frequency magnetic thin films with excellent properties were obtained by adding Al _ 2O _ 3 into Al _ 2O _ 3. The main research work includes: (1) using component gradient sputtering method (CGSN composition gradient sputterings) and magneto-electric coupling method (magnetoelectric coupling). Firstly, uniaxial magnetic anisotropic FeCo AlO thin films with Al and O composition gradient were prepared on single crystal Si substrates by component gradient sputtering. The frequency of ferromagnetic resonance (fFMR) at zero bias magnetic field is as high as 5.4 GHz. Then, the region with superior comprehensive performance is chosen, and the corresponding position of Si substrate is replaced by the cleavage PZN-PT ferroelectric substrate under the same conditions. The FeCoAlO composition gradient film composite system was prepared by sputtering on PZN-PT substrate. It is exciting that the ferromagnetic resonance frequency (fFMR) of the composite system is affected by the stress gradient induced by the composition gradient and the magnetoelectric coupling effect. From 3.4 GHz to 9.6 GHz, the uniaxial magnetic anisotropy field HK is also raised from 100Oe to 735Oe. The results show that the combination of CGS and MEC can realize the synergistic enhancement of ferromagnetic resonance frequency and increase the frequency of ferromagnetic resonance in X-band. In order to lay a foundation for the application prospect of FeCo AlO thin film in microwave magnetic devices, the structure of macroscopic vortex magnetic anisotropy was established. The nanocrystalline CoFeAlO CGS thin films with macroscopic vortex magnetic anisotropy structure were constructed by component gradient sputtering method. Film. Due to the competitive effect of tangential and radial residual stresses, Make the total stress transition from tensile stress to compressive stress, As a result, the magnetization axis gradually transitioned from the radial direction to the tangential direction, and the samples showed the characteristics of macroscopic vortex magnetic anisotropy. The FeCo AlO gradient films deposited by the CGS method showed a good high frequency ferromagnetism. The cutoff frequency is 2 GHz and QM factor is more than 50.
【學(xué)位授予單位】：青島大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2;TN405

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本文編號(hào)：1524648