本文關(guān)鍵詞： 集成電路 偏置溫度不穩(wěn)定性 軟差錯(cuò)率 關(guān)鍵電荷值 延遲　出處：《電子與信息學(xué)報(bào)》2017年07期 　論文類型：期刊論文

【摘要】：納米工藝下,老化效應(yīng)與軟差錯(cuò)共同引發(fā)的集成電路可靠性問(wèn)題至關(guān)重要。該文分析偏置溫度不穩(wěn)定性(BTI),包括負(fù)偏置溫度不穩(wěn)定性(NBTI)和正偏置溫度不穩(wěn)定性(PBTI)對(duì)軟差錯(cuò)率的影響,提出從關(guān)鍵電荷值和延遲兩個(gè)因素綜合考慮。首先分析BTI效應(yīng)下兩個(gè)因素如何變化,推導(dǎo)了延遲受BTI影響的變化模型,介紹關(guān)鍵電荷的變化機(jī)理。然后探討將兩個(gè)因素結(jié)合到軟差錯(cuò)率(SER)評(píng)估中,推導(dǎo)了融入關(guān)鍵電荷值的SER計(jì)算模型,提出將延遲的變化導(dǎo)入到電氣屏蔽中的方法。基于ISCAS89基準(zhǔn)電路上的實(shí)驗(yàn)驗(yàn)證了綜合兩種因素考慮BTI效應(yīng)評(píng)估SER的有效性和準(zhǔn)確性。
[Abstract]:In nanotechnology, The reliability of integrated circuits caused by both aging effect and soft error is very important. In this paper, the effects of bias temperature instability, including negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI), on the soft error rate are analyzed. The key charge value and delay are considered synthetically. Firstly, how to change the two factors under BTI effect is analyzed, and the model of delay affected by BTI is derived. This paper introduces the mechanism of the change of key charge, and then discusses the combination of two factors into the evaluation of soft error rate (SER), and deduces the SER calculation model incorporating the critical charge value. A method of introducing the change of delay into electrical shielding is proposed. The effectiveness and accuracy of evaluating SER by synthesizing two factors considering BTI effect are verified by experiments on ISCAS89 reference circuit.
【作者單位】： 上海電力學(xué)院計(jì)算機(jī)科學(xué)與技術(shù)學(xué)院;同濟(jì)大學(xué)軟件學(xué)院;安徽工程大學(xué)計(jì)算機(jī)與信息學(xué)院;
【基金】：國(guó)家自然科學(xué)基金(61432017,61404092) 上海電力學(xué)院人才啟動(dòng)基金(K-2013-017) 上海高校青年教師資助計(jì)劃項(xiàng)目(Z2015-074) 上海市科委地方能力建設(shè)項(xiàng)目(15110500700)~~
【分類號(hào)】：TN406

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1 蔡爍;鄺繼順;劉鐵橋;周穎波;;一種高效的門級(jí)電路可靠度估算方法[J];電子與信息學(xué)報(bào);2013年05期

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本文編號(hào)：1514351