本文關鍵詞： 微波 退火 離子注入 快速熱處理工藝(RTP) 熱預算　出處：《微納電子技術(shù)》2017年12期 　論文類型：期刊論文

【摘要】：針對傳統(tǒng)快速熱處理工藝(RTP)在退火過程中引起雜質(zhì)再擴散導致難以制作淺結(jié)器件的問題,采用了微波退火的方式進行退火,有效降低了熱預算,能夠解決雜質(zhì)再擴散的問題。相比傳統(tǒng)RTP退火,微波的退火機理具有特殊性,其不僅有微波的熱效應還有微波的非熱效應,使微波退火能夠在較低的溫度下實現(xiàn)雜質(zhì)激活和晶格修復。實驗表明,在注入能量為15 keV、注入劑量為1×1015 cm-2時,P31注入的樣品經(jīng)微波退火后其方塊電阻均值小于200Ω/,片內(nèi)不均勻度小于3%,最高退火溫度僅約為400℃,熱預算遠低于傳統(tǒng)RTP退火。該實驗結(jié)果表明,微波退火的方法在淺結(jié)器件的制備工藝中有較大的應用潛力。
[Abstract]:In view of the problem that the traditional rapid heat treatment process (RTP) causes the impurity rediffusion in the annealing process, it is difficult to fabricate the shallow junction device. The microwave annealing method is used to anneal the device, which effectively reduces the thermal budget. Compared with traditional RTP annealing, microwave annealing mechanism has its particularity. It not only has the thermal effect of microwave but also the non-thermal effect of microwave. So that microwave annealing can realize impurity activation and lattice repair at lower temperature. When the implanted energy is 15 Kev and the implantation dose is 1 脳 10 15 cm-2, the average square resistance of the sample implanted by microwave annealing is less than 200 惟 / r, the uniformity in the chip is less than 3 and the maximum annealing temperature is only about 400 鈩，

本文編號：1510265