本文關(guān)鍵詞： W波段 諧波混頻器 肖特基二極管 變頻損耗　出處：《南京理工大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：W波段是指頻率在75～110GHz范圍內(nèi)的電磁波,在毫米波中,W波段是重要的窗口頻率,其中心頻率位于毫米波94GHz的大氣窗口,因而在通信、遙感探測等方面應(yīng)用日益廣泛。作為系統(tǒng)中的關(guān)鍵器件,混頻器的指標(biāo)極大程度上影響著系統(tǒng)整體的性能,分諧波技術(shù)因可以降低本振源的要求而得到廣泛應(yīng)用。本文首先介紹了基于肖特基二極管技術(shù)的諧波混頻器國內(nèi)外發(fā)展動態(tài),在此基礎(chǔ)上,對肖特基二極管應(yīng)用于諧波混頻器的原理和設(shè)計方法展開了研究。在W波段,由于肖特基二極管封裝寄生參數(shù)對混頻器性能的影響已經(jīng)非常顯著,因而利用集總等效電路法對VDI公司的W波段肖特基反向并聯(lián)二極管對R23C15進行了相關(guān)參數(shù)的分析,基于肖特基二極管物理模型來充分考慮封裝寄生參數(shù),建立較為準(zhǔn)確的反向并聯(lián)二極管對等效模型。為了克服基于分立器件仿真的傳統(tǒng)諧波混頻器設(shè)計方法優(yōu)化空間不大而難以得到最優(yōu)變頻損耗的缺點,在基于器件級建模仿真的基礎(chǔ)上,使用全局性系統(tǒng)級仿真優(yōu)化方法,對影響諧波混頻器性能的關(guān)鍵參數(shù)進行優(yōu)化,最終在固定本振條件下仿真結(jié)果如下：W波段二次諧波混頻器在80～100GHz內(nèi)變頻損耗優(yōu)于9.4dB,W波段四次諧波混頻器在84～96GHz內(nèi)變頻損耗優(yōu)于11.2dB。加工并測試了W波段四次諧波混頻器,測試結(jié)果表明在82～94GHz內(nèi)變頻損耗小于14dB,驗證了管對等效模型建立方法的合理性,確立了一種高效可靠的諧波混頻器設(shè)計方法。
[Abstract]:The W band is an electromagnetic wave with a frequency of 75 ~ 110GHz. In the millimeter wave, the W band is an important window frequency. The center frequency of the wave is located in the atmosphere window of the millimeter wave at 94GHz. As a key device in the system, the index of mixer greatly affects the overall performance of the system. Subharmonic technology is widely used because it can reduce the requirement of local oscillator. Firstly, this paper introduces the development of harmonic mixer based on Schottky diode technology at home and abroad. The principle and design method of Schottky diode used in harmonic mixer are studied. In W band, the influence of parasitic parameters of Schottky diode packaging on the performance of mixer is very significant. Therefore, the lumped equivalent circuit method is used to analyze the related parameters of VDI W-band Schottky reverse parallel diodes for R23C15. Based on the Schottky diode physical model, the parasitic parameters of packaging are fully considered. In order to overcome the disadvantage of traditional harmonic mixer design method based on discrete device simulation, it is difficult to obtain the optimal frequency conversion loss because of the small optimization space of the traditional harmonic mixer design method based on discrete device simulation. Based on the device level modeling and simulation, the key parameters affecting the performance of the harmonic mixer are optimized by using the global system-level simulation optimization method. Finally, the simulation results under the condition of fixed local oscillator are as follows: the frequency conversion loss of the second harmonic mixer in the W band is better than that of the fourth harmonic mixer in the frequency band of 9.4 dB at 100GHz, and the frequency loss of the fourth-harmonic mixer in the band of 9.4 dBU is better than that of 11.2dB at 840.96GHz. The W-Band fourth-harmonic mixer is machined and tested. The test results show that the frequency conversion loss is less than 14dB at 82nm 94GHz, which verifies the rationality of the method of establishing equivalent model of transistor pair, and establishes an efficient and reliable design method of harmonic mixer.
【學(xué)位授予單位】：南京理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN773

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本文編號：1505825