本文關(guān)鍵詞： pMOS器件 負(fù)偏壓溫度不穩(wěn)定性(NBTI) 器件模擬(TCAD) 閾值電壓 薄膜晶體管(TFT)　出處：《深圳大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著半導(dǎo)體技術(shù)的發(fā)展,器件日益小型化,pMOS器件的負(fù)溫度不穩(wěn)定效應(yīng)NBTI(Negative Bias Temperature Instability)加劇,成為影響器件和相關(guān)電路壽命的主要因素,因而重新受到重視。在實(shí)際的物理實(shí)驗(yàn)中,往往熱載流子效應(yīng)、NBTI效應(yīng)等多種退化同時(shí)發(fā)生,難以進(jìn)行獨(dú)立研究。而且隨著器件的尺寸越來越小,實(shí)驗(yàn)測(cè)量的難度加大。傳統(tǒng)的實(shí)驗(yàn)方法從經(jīng)濟(jì)和技術(shù)的角度都顯示出了不足,因此使用數(shù)值模擬軟件進(jìn)行研究顯得尤為重要。在實(shí)際情況中,器件的漏極會(huì)加偏壓,這時(shí)導(dǎo)致的退化又稱為帶偏置DB-NBTI(Drain Bias NBTI)效應(yīng)。與傳統(tǒng)的NBTI效應(yīng)不同,其退化產(chǎn)生的界面電荷在溝道方向上非均勻分布。這種非均勻分布的界面電荷對(duì)器件的影響,目前還未得到充分研究。本論文抓住這一機(jī)會(huì),利用器件數(shù)值模擬軟件,結(jié)合NBTI退化模型,分別研究了非均勻界面電荷pMOS器件和p溝道多晶硅薄膜晶體管TFT(Thin Film Transistor)的閾值電壓退化特性。主要工作概括:(1)利用數(shù)值模擬軟件Genius-Open,在溝道變化的情況下提取器件閾值電壓,和電荷共享模型進(jìn)行了擬合,并且研究了均勻界面電荷對(duì)pMOS器件閾值電壓的影響,明確了構(gòu)建器件模型的合理性,選取的退化模型、提取閾值電壓方法的正確性。(2)通過將柵極分段,對(duì)界面電荷填充不同的濃度,模擬引入非均勻界面電荷的方法,研究了不同界面電荷的位置對(duì)pMOS閾值電壓的影響,并通過研究不同情況下器件的表面勢(shì),探究了閾值電壓變化的機(jī)理。(3)引入了分段連續(xù)分布的界面電荷,改變其濃度、分布長度,研究其對(duì)器件閾值電壓的影響。并且對(duì)不同位置界面電荷之間的互相作用進(jìn)行了探究。(4)最后,結(jié)合多晶硅陷阱分布模型,運(yùn)用數(shù)值模擬商業(yè)軟件Medici研究了p溝道TFT閾值電壓,考慮和不考慮陷阱模型的情況都進(jìn)行了討論。分別設(shè)置了界面電荷不同的位置、濃度、連續(xù)分布長度,分析其對(duì)TFT閾值電壓變化的影響。和以前的工作比較,引入變化的時(shí)間應(yīng)力,研究了考慮陷阱模型TFT在漏極加偏壓的情況下,隨時(shí)間的退化特性。為進(jìn)一步理論研究實(shí)際狀況下TFT中NBTI退化奠定了一定基礎(chǔ)。
[Abstract]:With the development of semiconductor technology, the negative temperature instability (NBTI(Negative Bias Temperature stability) of pMOS devices is becoming more and more small, which has become the main factor affecting the lifetime of devices and related circuits. Many kinds of degradation, such as the hot carrier effect and NBTI effect, occur at the same time, so it is difficult to carry out independent research, and as the size of the device becomes smaller and smaller, The difficulty of experimental measurement is increased. The traditional experimental methods are not enough in terms of economy and technology, so it is very important to use numerical simulation software to study them. In practice, the drain of the device will be biased. The resulting degradation is also known as the band-biased DB-NBTI(Drain Bias NBTI effect. Unlike the traditional NBTI effect, the interface charge generated by the degradation is distributed inhomogeneously in the channel direction, and the effect of the non-uniform distribution of the interfacial charge on the device. At present, it has not been fully studied. This paper takes this opportunity to use the device numerical simulation software, combined with the NBTI degradation model, The threshold voltage degradation characteristics of nonuniform interface charge pMOS devices and p-channel polysilicon transistor TFT(Thin Film transistors are studied respectively. The main work is summarized as follows: (1) using Genius-Open-numerical simulation software, the threshold voltage of the device is extracted under the condition of channel variation. The effect of uniform interface charge on threshold voltage of pMOS device is studied. The rationality of constructing device model and the degradation model are determined. The correctness of threshold voltage extraction method. (2) by dividing the grid electrode into different concentrations of interface charge and simulating the method of introducing non-uniform interface charge, the influence of the position of interface charge on the threshold voltage of pMOS is studied. By studying the surface potential of the device under different conditions, the mechanism of threshold voltage change is studied. Finally, combining with the polysilicon trap distribution model, the threshold voltage of p-channel TFT is studied by using the commercial software Medici. Considering and not considering the trap model, the effects of different positions of interface charge, concentration and continuous distribution length on the threshold voltage variation of TFT are analyzed, which are compared with previous work. By introducing the varying time stress, the degradation characteristics of the trap model TFT with time under the condition of drain bias are studied, which lays a foundation for the further theoretical study of NBTI degradation in TFT.
【學(xué)位授予單位】：深圳大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN386;TN321.5

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