硅片檢測平臺(tái)的結(jié)構(gòu)設(shè)計(jì)與誤差測試分析
本文關(guān)鍵詞: 硅片檢測 機(jī)械結(jié)構(gòu)設(shè)計(jì) 定位精度 誤差實(shí)驗(yàn) 出處:《華中科技大學(xué)》2015年碩士論文 論文類型:學(xué)位論文
【摘要】:如今的IC制造工業(yè)屬于IC技術(shù)的核心,是最受設(shè)計(jì)廠商關(guān)注的部分,也是企業(yè)投資最多的部分。而作為半導(dǎo)體制造的基礎(chǔ),硅片檢測與制造技術(shù)是最為重要的環(huán)節(jié)。本文基于硅片制造技術(shù)為背景,對硅片檢測過程的精密檢測設(shè)備進(jìn)行設(shè)計(jì)和研究。首先,針對本課題硅片檢測平臺(tái)的設(shè)計(jì)需求和技術(shù)參數(shù),對比三自由度和四自由度的優(yōu)缺點(diǎn),選擇并設(shè)計(jì)出適合本課題的平臺(tái)總體方案。并根據(jù)課題提出的精度要求,對運(yùn)動(dòng)平臺(tái)的三軸使用的驅(qū)動(dòng)方式進(jìn)行分析與選擇。開展了氣缸、音圈電機(jī)、光柵尺和滾動(dòng)導(dǎo)軌等關(guān)鍵部件的分析、選型與校核,完成了硅片檢測平臺(tái)的結(jié)構(gòu)設(shè)計(jì)和樣機(jī)研制。開展了垂向精密運(yùn)動(dòng)機(jī)構(gòu)的精密定位實(shí)驗(yàn),結(jié)果表明其垂向定位精度達(dá)到±0.1μm,滿足設(shè)計(jì)要求。最后,本文針對硅片平臺(tái)樣機(jī),進(jìn)行了硅片檢測平臺(tái)Z向的動(dòng)態(tài)誤差測試。通過對Z向零部件的誤差測試,分析了Z向誤差造成的因素,針對樣機(jī)的結(jié)構(gòu)及驅(qū)動(dòng)方式,進(jìn)行了硅片平臺(tái)的結(jié)構(gòu)改進(jìn),并針對硅片檢測平臺(tái)提出多自由度的耦合誤差分析。
[Abstract]:Today's IC manufacturing industry belongs to the core of IC technology, is the most concerned part of the design manufacturers, is also the largest part of the enterprise investment. And as the basis of semiconductor manufacturing, Wafer detection and manufacturing technology is the most important link. Based on the background of wafer manufacturing technology, this paper designs and studies the precision detection equipment in the process of wafer detection. According to the design requirements and technical parameters of the silicon wafer detection platform, the paper compares the advantages and disadvantages of three degrees of freedom and four degrees of freedom, selects and designs the overall scheme of the platform suitable for this subject, and according to the precision requirements of the subject, This paper analyzes and selects the driving mode of the three-axis motion platform. The key components, such as cylinder, voice coil motor, grating ruler and rolling guide rail, are analyzed, selected and checked. The structure design and prototype development of the wafer detection platform are completed. The precision positioning experiment of the vertical precision motion mechanism is carried out. The results show that the vertical positioning accuracy reaches 鹵0.1 渭 m, which meets the design requirements. Finally, the paper aims at the prototype of the silicon wafer platform. The dynamic error test of Z direction of silicon wafer detection platform is carried out. Through the error test of Z direction parts, the factors caused by Z direction error are analyzed, and the structure of silicon wafer platform is improved according to the structure and driving mode of the prototype. The coupling error analysis of multi-degree-of-freedom (MDOF) is proposed for silicon wafer detection platform.
【學(xué)位授予單位】:華中科技大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2015
【分類號(hào)】:TN304.12
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