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硅基無(wú)源集成LC集總濾波器的設(shè)計(jì)

發(fā)布時(shí)間:2018-02-10 18:16

  本文關(guān)鍵詞: 無(wú)源集成器件 LC集總濾波器 CoNbZr磁芯 平面螺旋電感 HFSS 出處:《電子科技大學(xué)》2015年碩士論文 論文類(lèi)型:學(xué)位論文


【摘要】:本文以硅基無(wú)源集成器件為研究目標(biāo)。先從薄膜磁芯材料入手,對(duì)CoNbZr軟磁薄材料進(jìn)行研究,設(shè)計(jì)、制備、測(cè)試并優(yōu)化其性能。然后重點(diǎn)研究了硅基無(wú)源平面螺旋電感和硅基LC集總濾波器這兩種器件。分別究了二者的設(shè)計(jì)和計(jì)算方法,并用ADS和HFSS進(jìn)行仿真,分析仿真結(jié)果,優(yōu)化器件性能。本文取得的進(jìn)展如下:第一,分析論證了集成無(wú)源器件研究的特點(diǎn),并提出本篇論文研究重點(diǎn),設(shè)計(jì)硅基無(wú)源集成LC濾波器。分析了無(wú)源器件工藝技術(shù),并對(duì)比其優(yōu)劣,最終選擇了硅基CMOS工藝。第二,研究了磁芯材料的制備。先分析了磁芯材料參數(shù)對(duì)平面電感性能的影響,選定直流磁控濺射發(fā)制備了CoNbZr軟磁合金薄膜,并對(duì)比了不同制備條件下,軟磁薄膜的性能,進(jìn)而對(duì)濺射條件進(jìn)行了優(yōu)化,最終得到矯頑力為6.22(Oe),磁導(dǎo)率達(dá)到100的CoNbZr軟磁薄膜。第三,研究了平面螺旋電感以及MIM電容。先對(duì)二者進(jìn)行模型分析,得到平面螺旋電感以及MIM電容的等效模型。通過(guò)對(duì)模型的分析,提出電感以及電容參數(shù)的計(jì)算公式。然后用HFSS軟件對(duì)兩種元器件進(jìn)行建模仿真,結(jié)合硅基CMOS工藝的可行性,設(shè)計(jì)出電感量為13nH,品質(zhì)因數(shù)達(dá)到20的平面空芯螺旋電感,電感量為100nH左右,品質(zhì)因數(shù)達(dá)到100的平面磁芯螺旋電感,以及電容量在pF量級(jí),工作頻段內(nèi)品質(zhì)因數(shù)達(dá)到10以上的片上電容,可滿(mǎn)足集成LC濾波器設(shè)計(jì)的需求。第四,首先研究了LC集總濾波器的設(shè)計(jì)方法,并詳細(xì)介紹了巴特沃斯響應(yīng)濾波器。根據(jù)這一設(shè)計(jì)思路,利用ADS軟件設(shè)計(jì)了π型低通LC濾波器,并分別用ADS電路模型和HFSS三位電磁場(chǎng)模型進(jìn)行仿真,對(duì)比二者的仿真結(jié)果并進(jìn)行了分析。得到通帶截止頻率為470MHz,通帶損耗小于0.5dB,阻帶抑制大于30dB的高頻LC低通濾波器。
[Abstract]:In this paper, silicon based passive integrated devices are taken as the research object. Firstly, the thin film magnetic core material is studied, and the soft magnetic thin material of CoNbZr is designed and fabricated. The performance is tested and optimized. Then, two kinds of devices, silicon-based passive planar spiral inductor and silicon-based LC lumped filter, are studied. The design and calculation methods of the two devices are studied, and the simulation results are analyzed by ADS and HFSS. The main achievements of this paper are as follows: first, the characteristics of integrated passive devices are analyzed and demonstrated, and the emphasis of this paper is put forward to design silicon-based passive integrated LC filters. Finally, the silicon-based CMOS process is chosen. Secondly, the preparation of magnetic core material is studied. Firstly, the influence of core material parameters on the performance of planar inductor is analyzed, and CoNbZr soft magnetic alloy thin films are prepared by DC magnetron sputtering. The properties of soft magnetic thin films under different preparation conditions were compared, and the sputtering conditions were optimized. Finally, the coercivity of CoNbZr soft magnetic thin films with a permeability of 100 was obtained. The planar spiral inductors and MIM capacitors are studied. The equivalent models of planar spiral inductors and MIM capacitors are obtained by model analysis. The calculation formulas of inductance and capacitance parameters are put forward, and then two kinds of components are modeled and simulated by HFSS software. Combined with the feasibility of silicon based CMOS process, a planar hollow spiral inductor with an inductance of 13nH and a quality factor of 20 is designed. The inductance is about 100nH, the plane core spiral inductance with a quality factor of 100, and the on-chip capacitance whose capacitance is in the order of PF, and the quality factor is more than 10 in the working frequency band, can meet the needs of the design of integrated LC filter. 4th, Firstly, the design method of LC lumped filter is studied, and the Butterworth response filter is introduced in detail. According to this design idea, 蟺 type low-pass LC filter is designed by using ADS software. The simulation results of ADS circuit model and HFSS three-bit electromagnetic field model are compared and analyzed. A high-frequency LC low-pass filter with passband cutoff frequency of 470 MHz, passband loss of less than 0.5 dB and stopband suppression of more than 30 dB is obtained.
【學(xué)位授予單位】:電子科技大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2015
【分類(lèi)號(hào)】:TN713

【二級(jí)參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 軒秀巍;董健;滕建輔;;LC濾波器設(shè)計(jì)的優(yōu)化解析公式(英文)[J];南京信息工程大學(xué)學(xué)報(bào)(自然科學(xué)版);2009年02期

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本文編號(hào):1501135

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