發(fā)布時(shí)間：2018-02-06 03:06

  本文關(guān)鍵詞： 硅通孔 熱應(yīng)力 遷移率 阻止區(qū)　出處：《西安電子科技大學(xué)學(xué)報(bào)》2017年06期 　論文類型：期刊論文

【摘要】：針對(duì)硅通孔熱應(yīng)力導(dǎo)致的沿不同晶向放置的器件遷移率變化進(jìn)行了討論.依據(jù)彈性理論,銅和硅襯底之間的熱膨脹系數(shù)失配能夠產(chǎn)生硅通孔熱應(yīng)力,考慮壓阻效應(yīng),熱應(yīng)力將導(dǎo)致載流子遷移率的變化.因此,文中首先依據(jù)平面應(yīng)變理論,建立了硅通孔熱應(yīng)力的緊湊解析模型;接著利用Matlab仿真,分別得出了硅通孔熱應(yīng)力對(duì)溝道方向沿[100]和[110]的載流子遷移率的影響,并考慮到可靠性,定義了阻止區(qū);最后,得出了[100]晶向和[-110]晶向應(yīng)分別作為N溝道金屬氧化物半導(dǎo)體器件和P溝道金屬氧化物半導(dǎo)體器件的優(yōu)先選擇的結(jié)論.
[Abstract]:Based on the elastic theory, the thermal expansion coefficient mismatch between copper and silicon substrate can produce silicon through pore thermal stress. Considering the piezoresistive effect, the thermal stress will lead to the change of carrier mobility. Then, by using Matlab simulation, the direction of the through hole thermal stress along the channel is obtained. [100] and. [The influence of carrier mobility of 110] and taking into account the reliability, the blocking zone is defined. Finally, the. [100] crystallographic sum. [The crystal orientation should be considered as the preferential choice for N channel metal oxide semiconductor devices and P channel metal oxide semiconductor devices, respectively.
【作者單位】： 西安電子科技大學(xué)微電子學(xué)院;
【基金】：國家自然科學(xué)基金資助項(xiàng)目(61574106,61574104) 國家部委基金資助項(xiàng)目(9140A23060115DZ01062) 陜西省科技統(tǒng)籌創(chuàng)新工程計(jì)劃資助項(xiàng)目(2015KTCQ01-5)
【分類號(hào)】：TN405
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本文編號(hào)：1493423