本文關(guān)鍵詞： 薄膜晶體管 溶液法 高k氧化物 鋅銦錫氧化物 高遷移率　出處：《上海大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：近年來,基于透明氧化物半導(dǎo)體的薄膜晶體管(Thin Film Transistor,TFT)因其高透光率,高遷移率并在未來平板顯示領(lǐng)域中有著潛在應(yīng)用的特點而受到人們的廣泛關(guān)注。目前,大部分TFT均是采用真空方法制備的,并且獲得了良好的性能。但采用真空法制備TFT器件會有很多缺點。以磁控濺射制備TFT為例,其存在著制備工藝成本高和靶材利用率低等缺點,不利于大規(guī)模的使用。溶液法作為TFT制備的另一種方法,它不需要真空環(huán)境,它具有工藝簡單,成本低和可以精確控制薄膜成分等優(yōu)點,可以大規(guī)模生產(chǎn)。因此,采用溶液法制備TFT的研究正在逐年增多。本論文研究采用溶液法制備Hf O2,Al2O3和HAO作絕緣層和ZITO作有源層氧化物材料,并在此基礎(chǔ)上制備出低壓驅(qū)動的底柵頂接觸結(jié)構(gòu)的TFT器件,并研究其性能。本論文的主要工作如下:1.在制備絕緣層材料時,首先采用溶液法旋涂工藝制備了Hf O2和Al2O3介質(zhì)薄膜,研究了不同溫度退火后薄膜的結(jié)構(gòu)和光電學(xué)性能,結(jié)果表明Hf O2薄膜具有漏電流高,擊穿電場低和介電常數(shù)高的特點,而Al2O3薄膜正好相反,具有漏電流低,擊穿電場高和介電常數(shù)低的特點。然后結(jié)合Hf O2和Al2O3制備出了HAO薄膜。研究發(fā)現(xiàn),Hf/Al=2:1的HAO膜在500 o C退火后的相對介電常數(shù)為12.1,并且在2 MV/cm的電場強(qiáng)度下的漏電流密度為1.69×10-7 A/cm2。2.在采用溶液法制備ZITO有源層時,研究了不同退火溫度對其的影響,并通過XPS,AFM等對其進(jìn)行了表征。為了制備出底柵頂接觸結(jié)構(gòu)的TFT器件,研究了ZITO膜在PAN和草酸中的刻蝕速率。結(jié)果表明經(jīng)過350 o C退火處理后的ZITO膜在溫度為35 o C的PAN中的刻蝕速率幾乎可以忽略不計。3.在溶液法成功制備絕緣層和有源層的基礎(chǔ)上,制備出了低壓驅(qū)動的底柵頂接觸結(jié)構(gòu)的TFT器件。并對ZITO-Hf O2 TFT,ZITO-Al2O3 TFT和ZITO-HAO TFT進(jìn)行了分析討論,重點研究了ZITO-HAO TFT。研究發(fā)現(xiàn),經(jīng)過500°C退火處理的ZITO-HAO器件具有開關(guān)比高(7.2×106),閾值電壓低(-0.6 V),亞閾值擺幅小(87 m V/decade)和飽和遷移率高(13.5 cm2/Vs)的特點.偏壓穩(wěn)定性測試表明HAO和ZITO的同時使用使得TFT器件具有很好的穩(wěn)定性。
[Abstract]:In recent years, thin Film transistors based on transparent oxide semiconductors (TFT) have been developed for their high transmittance. High mobility and potential applications in the field of flat panel display in the future have attracted widespread attention. At present, most of the TFT is prepared by vacuum method. And good performance has been obtained. However, there are many shortcomings in fabricating TFT devices by vacuum method. Taking magnetron sputtering as an example, there are many disadvantages such as high cost of preparation process and low utilization ratio of target materials. As another method of TFT preparation, solution method does not need vacuum environment. It has the advantages of simple process, low cost and accurate control of film composition. Therefore, the preparation of TFT by solution method is increasing year by year. Al2O3 and HAO are used as insulating layer and ZITO as active layer oxide material. On this basis, a low-voltage driven TFT device with bottom gate top contact structure is fabricated. The main work of this thesis is as follows: 1. In the preparation of insulating layer materials, HF _ 2 and Al2O3 dielectric thin films were prepared by solution spin-coating process. The structure and optoelectronic properties of the films annealed at different temperatures were studied. The results show that HFO _ 2 thin films have the characteristics of high leakage current, low breakdown electric field and high dielectric constant, whereas the Al2O3 films are just the opposite. It has the characteristics of low leakage current, high breakdown electric field and low dielectric constant. Then, HAO thin films were prepared by combining HFO _ 2 and Al2O3. The relative dielectric constant of Hf/Al=2:1 HAO films annealed at 500o C is 12.1. The leakage current density is 1.69 脳 10 ~ (-7) A / cm ~ (-2) at the electric field intensity of 2 MV/cm. The active layer of ZITO is prepared by solution method. The effects of different annealing temperatures on the structure were investigated and characterized by XPS-AFM. In order to fabricate the TFT devices with bottom gate top contact structure. The etching rate of ZITO film in PAN and oxalic acid was studied. The results show that the temperature of ZITO film annealed at 35o C is 35 o. The etching rate in C PAN is almost negligible. 3. On the basis of the successful preparation of insulating layer and active layer by solution method. TFT devices with bottom gate top contact structure driven by low voltage are fabricated, and ZITO-Hf O 2 TFT is obtained. ZITO-Al2O3 TFT and ZITO-HAO TFT were analyzed and discussed, especially ZITO-HAO TFT. The ZITO-HAO device annealed at 500 擄C has a high switching ratio of 7.2 脳 10 ~ 6N and a low threshold voltage of -0.6 V). Sub-threshold swing (87 m V / L decadea) and high saturation mobility (13.5 cm 2 / V s). The bias stability test shows that the use of both HAO and ZITO makes TFT devices have good stability.
【學(xué)位授予單位】：上海大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN321.5

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