本文關(guān)鍵詞： 薄膜晶體管 磁控濺射 金屬氧化物半導(dǎo)體 MgAlSnO　出處：《深圳大學(xué)》2017年碩士論文　論文類(lèi)型：學(xué)位論文

【摘要】：當(dāng)今電子信息化產(chǎn)業(yè)發(fā)展日新月異,顯示技術(shù)在這其中更是扮演了十分重要的角色。在現(xiàn)有的顯示技術(shù)中,無(wú)論是已規(guī)�；慨a(chǎn)的TFT-LCD,還是作為最具潛力的下一代顯示技術(shù)AM-OLED,TFT陣列都是其核心技術(shù)。近年來(lái),氧化物半導(dǎo)體TFT因其具有高遷移率、可見(jiàn)光區(qū)域透明、可低溫制備等特性而受到了廣泛關(guān)注,是值得進(jìn)一步研究和開(kāi)發(fā)的新型TFT技術(shù)。本論文首次進(jìn)行了采用磁控濺射方法制備MgAlSnO三元復(fù)合金屬氧化物薄膜的研究,并對(duì)其作TFT有源層的應(yīng)用進(jìn)行了初步的實(shí)驗(yàn)探索,主要研究工作及結(jié)果如下:1、首先尋找最佳的磁控濺射工藝;針對(duì)磁控濺射設(shè)備工藝參數(shù)對(duì)制備MgAlSnO薄膜的影響進(jìn)行了詳細(xì)的實(shí)驗(yàn)研究,發(fā)現(xiàn)濺射氣壓為0.6Pa、濺射功率為100W時(shí),薄膜的生長(zhǎng)速度最快,表面形貌最好,并在120nm的厚度下保持良好的非晶態(tài)。2、對(duì)錫酸鎂進(jìn)行不同化學(xué)配比的Al摻雜,探索MgAlSnO在不同Al元素?fù)诫s比(Mg:Sn:Al=16:7:1/8:3:1/4:1:1/1:1:2)下對(duì)薄膜的表面形貌、光學(xué)透過(guò)率和電學(xué)性能的影響。實(shí)驗(yàn)結(jié)果表明:隨著Al元素比例的增加,薄膜表面粗糙度減小,表面更為光滑致密,可見(jiàn)Al元素的摻入有利于改善薄膜質(zhì)量;不同配比的MgAlSnO薄膜在可見(jiàn)光波段的透過(guò)率不盡相同,但都保持在92%以上;對(duì)其MSM結(jié)構(gòu)的電學(xué)性能測(cè)試發(fā)現(xiàn)電流密度和電壓基本保持線性關(guān)系,說(shuō)明MATO系列薄膜與Al電極和ITO電極之間形成良好的歐姆接觸,Mg_2SnO_4和大比例摻Al的MATO(1:1:2)薄膜的導(dǎo)電性較好;3、利用EDS定性分析所制備的MATO系列薄膜上物質(zhì)元素的組成成分時(shí),發(fā)現(xiàn)薄膜成分與靶材的的配比有一定的差距,但當(dāng)靶材中Al元素低摻雜時(shí),薄膜中還是能含有接近匹配含量的Al;4、在Mg_2SnO_4和MgAlSnO薄膜制備過(guò)程中通入少量氧氣(O_2/Ar=2/48)時(shí),薄膜透過(guò)率都得到了提高,達(dá)到93%以上,部分比例薄膜導(dǎo)電性降低,說(shuō)明通氧情況下,斷裂氧鍵的金屬原子會(huì)繼續(xù)被氧化,透過(guò)率得到提高,薄膜中氧空位減少,用于導(dǎo)電的載流子濃度降低,導(dǎo)電性變差;5、300℃退火處理后Mg_2SnO_4和MgAlSnO薄膜仍保持非晶結(jié)構(gòu),薄膜表面光滑致密,導(dǎo)電性有所降低,主要是由于高溫退火后薄膜中原子重組一次,氧空位缺陷減少,載流子濃度降低;6、在前期探索的良好的薄膜性能基礎(chǔ)上,將MATO薄膜應(yīng)用到TFT有源層,并結(jié)合光刻工藝進(jìn)行了制備小尺寸TFT器件的初步試驗(yàn)。
[Abstract]:With the rapid development of electronic information industry, display technology plays a very important role in this field. In the existing display technology, whether it is a large-scale production of TFT-LCD. It is the core technology of AM-Ole TFT array, which is the most promising next generation display technology. In recent years, oxide semiconductor TFT is transparent in visible region because of its high mobility. Low temperature preparation and other properties have attracted wide attention. It is a new TFT technology worthy of further research and development. In this thesis, the preparation of MgAlSnO ternary composite metal oxide thin films by magnetron sputtering method was first studied. The application of TFT as active layer is studied. The main research work and results are as follows: 1. First, the best magnetron sputtering technology is found. The effects of the process parameters of magnetron sputtering equipment on the preparation of MgAlSnO thin films were studied in detail. It was found that the sputtering pressure was 0.6 Pa and the sputtering power was 100W. The film has the fastest growth rate, the best surface morphology, and maintains a good amorphous state. 2 at the thickness of 120nm. The magnesium Stannate is doped with different chemical ratios of Al. To explore the surface morphology of MgAlSnO films at different Al doping ratios (mg: SnW: 16: 7: 1 / 8: 3: 1 / 4: 1 / 1 / 1 / 1: 2). The influence of optical transmittance and electrical properties. The experimental results show that with the increase of Al element ratio, the surface roughness decreases and the surface becomes smoother and denser. It can be seen that the addition of Al element can improve the film quality. The transmittance of MgAlSnO films with different ratios is different in the visible band, but all of them remain above 92%. The electrical properties of the MSM structure show that the current density and voltage have a linear relationship, indicating that the ohmic contact between the MATO series films and Al and ITO electrodes is good. The conductivity of Mg_2SnO_4 and Al doped MATLAB 1: 1: 2) thin films is better. 3. When EDS qualitative analysis was used to analyze the composition of material elements in MATO series films, it was found that there was a certain gap between the composition of the films and the target materials, but when Al elements in the target materials were low doping. The film can still contain Al close to the matching content; 4. The transmittance of Mg_2SnO_4 and MgAlSnO films increased to more than 93% when a small amount of oxygen was added into the thin films. The partial reduction of the electrical conductivity of the films indicates that the metal atoms with broken oxygen bonds will continue to be oxidized, the transmittance will be increased, the oxygen vacancies in the films will be reduced, and the carrier concentration for conducting electricity will be reduced. Poor conductivity; After annealing at 5,300 鈩，

本文編號(hào)：1484563