發(fā)布時(shí)間：2018-02-02 10:14

  本文關(guān)鍵詞： 光敏晶體管 單載流子傳輸 輸出電流 空間電荷效應(yīng) 發(fā)射結(jié)注入效率　出處：《紅外與毫米波學(xué)報(bào)》2017年05期 　論文類型：期刊論文

【摘要】：詳細(xì)對(duì)比并分析了雙異質(zhì)結(jié)單載流子傳輸光敏晶體管(Uni-travelling-carrier Double Heterojunction Phototransistor,UTC-DHPT)與單異質(zhì)結(jié)光敏晶體管(Single Heterojunction Phototransistor,SHPT)在大的入射光功率范圍下集電極輸出電流特性.首先,UTC-DHPT僅選取窄帶隙重?fù)诫s的基區(qū)作為吸收區(qū),與SHPT選取基區(qū)和集電區(qū)作為吸收區(qū)相比,其光吸收區(qū)厚度小,在小功率入射光下UTC-DHPT的輸出電流小于SHPT的輸出電流.其次,由于UTCDHPT的雙異質(zhì)結(jié)結(jié)構(gòu),光生電子和光生空穴產(chǎn)生于基區(qū),減弱了SHPT因光生空穴在集電結(jié)界面積累而產(chǎn)生的空間電荷效應(yīng),避免了SHPT在小功率入射光下輸出電流開(kāi)始飽和的問(wèn)題,從而UTC-DHPT獲得了比SHPT更大的準(zhǔn)線性工作范圍.最后,UTC-DHPT的單載流子(電子)傳輸方式使得基區(qū)產(chǎn)生的光生空穴以介電弛豫的方式到達(dá)發(fā)射結(jié)界面,有效降低了發(fā)射結(jié)勢(shì)壘,增加了單位時(shí)間內(nèi)由發(fā)射區(qū)傳輸?shù)交鶇^(qū)的電子數(shù)量,提高了其發(fā)射結(jié)注入效率,在大功率入射光下UTC-DHPT比SHPT能獲得更高的輸出電流.
[Abstract]:A detailed comparison and analysis of the double heterostructure single carrier transmission (Uni-travelling-carrier Double Heterojunction Phototransistor photo transistor, UTC-DHPT) and single heterojunction phototransistor (Single Heterojunction, Phototransistor, SHPT) in the range of incident light power output collector current characteristics. First, the base UTC-DHPT is selected as the heavily doped narrow band gap absorption region SHPT and the selection of base region and the collector region as compared to the light absorption region, the absorption area of small thickness, the output current of small power incident light UTC-DHPT is less than SHPT. Secondly, the double heterostructure UTCDHPT, the photogenerated electrons and holes in the base region, weakened the effect of space charge SHPT because of photogenerated holes in the collector area of the ward tired to avoid SHPT in small power, the incident light output current began to saturation, which was UTC-DHPT 寰椾簡(jiǎn)姣擲HPT鏇村ぇ鐨勫噯綰挎，

本文編號(hào)：1484274