本文關(guān)鍵詞： 亞閾值區(qū) 高精度 高電源電壓抑制比 超低功耗 低溫漂　出處：《微電子學(xué)》2017年02期 　論文類型：期刊論文

【摘要】：提出了一種超低功耗、無BJT的基于亞閾值CMOS特性的基準電壓源。采用正負溫度系數(shù)電流求和的方式來獲得與溫度無關(guān)的電流,再轉(zhuǎn)換成基準電壓;采用共源共柵電流鏡來提高電源電壓抑制比和電壓調(diào)整率�；赟MIC 0.18μm CMOS工藝進行仿真,結(jié)果表明,在-20℃~135℃溫度范圍內(nèi),溫漂系數(shù)為2.97×10~(-5)/℃;在0.9~3.3V電源電壓范圍內(nèi),電壓調(diào)整率為0.089%;在頻率為100Hz時,電源電壓抑制比為-74dB,電路功耗僅有230nW。
[Abstract]:An ultra-low power, BJT free reference voltage source based on subthreshold CMOS characteristics is proposed. The temperature independent current is obtained by summing positive and negative temperature coefficient currents and then converted to reference voltage. The power supply voltage rejection ratio and voltage adjustment rate are improved by using the common grid current mirror. The simulation results based on SMIC 0.18 渭 m CMOS process show that the temperature drift coefficient is 2.97 脳 10 ~ (-5) / 鈩，

本文編號：1483638