本文關(guān)鍵詞： 環(huán)形振蕩器 電流控制 低溫漂 DC-DC轉(zhuǎn)換器　出處：《南京郵電大學》2015年碩士論文　論文類型：學位論文

【摘要】：作為眾多電子裝置的關(guān)鍵部件,振蕩器的應用范圍從微處理芯片中的時鐘生成到蜂窩電話中的載波合成,對結(jié)構(gòu)和性能參數(shù)提出了差別特別大的需求。隨著CMOS工藝技術(shù)的發(fā)展,振蕩器的結(jié)構(gòu)不斷變化,這不僅滿足了電路設計者的選擇需求,而且也滿足了振蕩器在不同場合下的應用。環(huán)形振蕩器所具有的特殊屬性使其更加有利于設計頻率高、調(diào)節(jié)范圍寬、線性度高的振蕩器。然而溫度對振蕩器的頻率穩(wěn)定性具有較大影響,因此有必要對環(huán)形振蕩器的溫度進行補償。本文針對低溫漂的環(huán)形振蕩器進行了研究設計,提出了電流控制的結(jié)構(gòu),首先介紹了振蕩器的研究背景及研究現(xiàn)狀;而后介紹了振蕩器的工作原理及環(huán)形振蕩器的基本結(jié)構(gòu);接下來根據(jù)設計方案對模塊電路及整體電路進行了設計并且使用仿真軟件進行了仿真驗證;最后對版圖部分進行了設計。本文使用標準的CSMC 0.5um CMOS工藝庫進行了電路的設計仿真,通過模擬仿真實現(xiàn)了低溫漂的環(huán)形振蕩器的設計。仿真結(jié)果顯示輸出頻率大約在1.2MHz左右,當溫度從0℃-100℃變化時,頻率變化率(△f/f)大約為7.4‰。本文設計的環(huán)形振蕩器特別適合應用于DC-DC轉(zhuǎn)換器中。
[Abstract]:As a key part of many electronic devices, oscillator applications range from the micro processing chip in the clock generation to carrier synthesis in a cellular phone, the difference is particularly large demand on the structure and performance parameters. With the development of CMOS technology, changing oscillator structure, which not only meets the demand to choose the circuit designers. But also to meet the application of oscillator in different occasions. The special properties of the ring oscillator is more conducive to the design of high frequency, wide adjustment range, high linearity of the oscillator. However, temperature on the vibration frequency stability device has a great influence, so it is necessary to compensate the temperature. This paper studies the ring oscillator for the design of low temperature drift of ring oscillator, puts forward the structure of current control, first introduced the research background and research situation of the oscillator and the dielectric; Introduces the basic structure and working principle of the ring oscillator oscillator; next according to the design of circuit and the whole circuit and the use of simulation software for the simulation of the layout; finally the part of the design. This paper use the standard CSMC 0.5um CMOS technology base for the simulation, through the simulation to achieve the design of low temperature drift of ring oscillator. The simulation results show that the output frequency is about 1.2MHz, when the temperature from 0 DEG -100 DEG change, frequency change rate (f/f) is about 7.4 per thousand. The design of the ring oscillator is especially suitable for application in DC-DC converter.

【學位授予單位】：南京郵電大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN752

【參考文獻】

相關(guān)期刊論文 前3條

1 王雪艷,朱恩,熊明珍,王志功;11GHz CMOS環(huán)形壓控振蕩器設計[J];半導體學報;2005年01期

2 韓波;唐廣;;2.4GHz動態(tài)CMOS分頻器的設計[J];國外電子元器件;2006年01期

3 張耀忠;吳建輝;丁家平;龍善麗;;一種改進的內(nèi)置和式基準電流源的設計[J];應用科學學報;2006年01期

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本文編號：1483515