本文關(guān)鍵詞： 微波 量子點 諧振腔 寬頻帶 低溫 低噪聲放大器　出處：《中國科學(xué)技術(shù)大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著微波測量測量技術(shù)的日益發(fā)展,測量系統(tǒng)越來越多地被要求在低溫甚至極低溫的環(huán)境下進行測量工作。特別在半導(dǎo)體量子點領(lǐng)域中諧振腔與量子點耦合的低溫測量系統(tǒng)中,需要同時用到兩個低噪聲放大器,并分別要求它們在4K極低溫和室溫下工作。由于量子點信號十分微弱,這就要求作為接收信號前端的放大器在抑制噪聲的同時提供足夠大的增益來放大量子點信號。而且不同腔的諧振頻率變化較大,還需要放大器有較大的帶寬。 本文首先介紹了C波段寬頻帶低溫低噪聲放大器的研制意義。隨后介紹了寬頻帶低溫低噪聲放大器的基礎(chǔ)理論,并詳細介紹了寬頻帶低溫低噪聲放大器的設(shè)計方法,包括穩(wěn)定性、偏置網(wǎng)絡(luò)、匹配網(wǎng)絡(luò)的設(shè)計等。接著對寬頻帶低溫低噪聲放大器的仿真和實測結(jié)果的偏差進行分析,并引入S參數(shù)的去嵌入技術(shù)對其進行修正。最后介紹了C波段寬頻帶低溫低噪聲放大器PCB電路版圖的制作、金屬屏蔽盒的設(shè)計和其在室溫和4K極低溫下的測試結(jié)果。 本文設(shè)計的C波段寬頻帶低溫低噪聲放大器采用三級聯(lián)結(jié)構(gòu),其工作頻段為5-6.5GHz,在室溫下測量增益為30.7±1dB,輸入輸出反射損耗均小于-10dB,噪聲系數(shù)小于1.6dB。在4K極低溫的條件下測試,通過適當調(diào)整放大器的偏置電壓后,其增益能達到34.3±1.3dB。
[Abstract]:With the development of microwave measurement technology. Measurement systems are increasingly required to measure at low or even very low temperatures, especially in low-temperature measurement systems where resonators are coupled with quantum dots in the field of semiconductor quantum dots. Two low-noise amplifiers are required to operate at 4K at low temperature and at room temperature respectively. The quantum dot signal is very weak. This requires the amplifier as the front end of the received signal to provide a large gain to amplify the quantum dot signal while suppressing the noise, and the resonant frequency of different cavities varies greatly, and the amplifier also needs a large bandwidth. This paper first introduces the development significance of C-band low temperature low noise amplifier and then introduces the basic theory of wide band low temperature low noise amplifier. The design method of broadband low temperature and low noise amplifier is introduced in detail, including stability and bias network. The design of matching network and so on. Then the deviation of simulation and measured results of broadband low temperature and low noise amplifier is analyzed. The S-parameter de-embedding technique is introduced to modify it. Finally, the fabrication of C-band low temperature low-noise amplifier PCB circuit layout is introduced. The design of metal shield box and its test results at room temperature and 4 K very low temperature. The C-band broadband low-temperature low-noise amplifier is designed with a three-stage structure. The operating frequency range is 5-6.5 GHz, and the measured gain is 30.7 鹵1dB at room temperature. The input-output reflection loss is less than -10 dB, and the noise coefficient is less than 1.6 dB. At 4K low temperature, the bias voltage of the amplifier is adjusted properly. The gain can reach 34.3 鹵1.3 dB.
【學(xué)位授予單位】：中國科學(xué)技術(shù)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN722.3

【參考文獻】

相關(guān)期刊論文 前2條

1 陳松麟,梁世光;一種簡單的S參數(shù)去嵌入技術(shù)[J];微波學(xué)報;2004年03期

2 牛朝;李迎松;王琦;楊曉冬;;基于ADS仿真的寬頻帶低噪聲放大器設(shè)計[J];應(yīng)用科技;2011年01期

，

本文編號：1483310