本文關(guān)鍵詞： SiGe 異質(zhì)結(jié)雙極晶體管 功率放大器 變壓器 Stack結(jié)構(gòu)　出處：《固體電子學(xué)研究與進(jìn)展》2017年04期 　論文類型：期刊論文

【摘要】：采用SiGe BiCMOS工藝設(shè)計了一款大功率高效率硅基功率放大器芯片,用于驅(qū)動現(xiàn)有大功率GaN功率放大器芯片,滿足相控陣?yán)走_(dá)的低成本需求。該硅基功率放大器通過和低噪聲放大器、驅(qū)動放大器、數(shù)控移相器、數(shù)控衰減器、單刀雙擲開關(guān)、電源管理以及數(shù)字邏輯單元等硅基電路進(jìn)一步集成,實(shí)現(xiàn)了一片式高集成度硅基幅相多功能芯片,從而降低了前端收發(fā)組件的尺寸和成本。在硅基功率放大器設(shè)計中,結(jié)合Stack結(jié)構(gòu)、變壓器耦合結(jié)構(gòu)和有源偏置結(jié)構(gòu),開展電路設(shè)計及優(yōu)化,提高了放大器的輸出功率和效率。測試結(jié)果表明:研制的硅基功率放大器在Ku波段f_1~f_2(3GHz帶寬)頻帶內(nèi),實(shí)現(xiàn)了小信號增益31dB;在-3dBm輸入功率條件下,實(shí)現(xiàn)發(fā)射功率21.5dBm、功率附加效率(PAE)25%等技術(shù)指標(biāo)。集成功率放大器的幅相多功能芯片在f_1~f_2(3GHz帶寬)頻帶內(nèi),實(shí)現(xiàn)了發(fā)射通道增益24dB;在5dBm輸入功率條件下發(fā)射功率21.5dBm、功率附加效率(PAE)23%等技術(shù)指標(biāo)。
[Abstract]:A high power and high efficiency silicon based power amplifier chip is designed using SiGe BiCMOS technology to drive the existing high power GaN power amplifier chip. The silicon based power amplifier passes through low noise amplifier, drive amplifier, numerical control phase shifter, numerical control attenuator, single pole double throw switch. Power management, digital logic unit and other silicon-based circuits are further integrated to achieve a high integrated silicon based amplitude and phase multifunctional chip. In order to reduce the size and cost of the front-end transceiver module, the circuit design and optimization are carried out by combining the Stack structure, transformer coupling structure and active bias structure in the design of silicon-based power amplifier. The output power and efficiency of the amplifier are improved. The test results show that the small signal gain of the silicon-based power amplifier is 31dBin in the Ku-band f1s / fstack / 2GHz / 3GHz bandwidth. Under the condition of -3dBm input power, the transmission power is 21.5 dBm. The amplitude-phase multifunctional chip of the integrated power amplifier can achieve the gain of 24 dB in the frequency band of f1 / fstack / 2GHz / 3GHz. Under the condition of 5 dBm input power, the transmission power is 21.5dBm, and the additional power efficiency is 23%.
【作者單位】： 南京電子器件研究所;
【分類號】：TN722.75
【正文快照】： 引言隨著相控陣?yán)走_(dá)系統(tǒng)在軍事領(lǐng)域和民用領(lǐng)域大量的應(yīng)用,如何降低相控陣所需求的數(shù)量龐大的T/R組件成本是目前面臨的難題。硅基工藝具備制作高集成度、低成本射頻微波芯片的能力[1]。為了使得硅基射頻芯片能夠直接驅(qū)動后端大功率GaN功率放大器,以滿足低成本小型化相控陣系統(tǒng)，

本文編號：1478620