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  本文關(guān)鍵詞： 柵控功率半導(dǎo)體器件 過渡區(qū) 終端可靠性 感性負(fù)載 過流失效　出處：《電子科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：目前,柵控功率器件作為主流功率開關(guān)器件被廣泛應(yīng)用于電磁加熱、機(jī)車牽引、智能電網(wǎng)等電力電子領(lǐng)域。而MOSFET(金屬氧化物半導(dǎo)體場效應(yīng)晶體管)與IGBT(絕緣柵雙極型晶體管)作為柵控功率器件的兩大主流器件,其發(fā)展代表著功率器件發(fā)展的主流方向。然而,隨著柵控功率半導(dǎo)體器件向著更大功率以及更高頻率的方向發(fā)展,對其可靠性也提出了更為苛刻的指標(biāo)和要求。眾多失效模式也在應(yīng)用中凸顯出來,其中一種便是柵控功率器件過渡區(qū)在感性負(fù)載下的過流關(guān)斷失效。為此,本文在國外相關(guān)論文的研究基礎(chǔ)之上,結(jié)合仿真分析,針對過渡區(qū)過流失效進(jìn)行了更深入的研究,另一目的也是為了引起國內(nèi)相關(guān)企業(yè)和研究機(jī)構(gòu)對功率器件可靠性研究的重視。本論文工作包含以下幾個方面:1、首先借助TCAD軟件,通過仿真確定了柵控功率器件過渡區(qū)在感性負(fù)載下過流關(guān)斷過程中的熱失效情況。并詳細(xì)討論關(guān)斷過程中過渡區(qū)內(nèi)部的物理參數(shù)如電流、電壓以及溫度的動態(tài)變化情況。2、從器件物理層面揭示過渡區(qū)感性負(fù)載下關(guān)斷過程中過流失效的原因,并分析了過渡區(qū)內(nèi)局部電流聚集引起的溫升以及動態(tài)雪崩等現(xiàn)象。3、在上述基礎(chǔ)之上,提出了過渡區(qū)在過流關(guān)斷過程中的二維熱傳導(dǎo)模型,通過分析得出了過渡區(qū)在溫升上升階段流進(jìn)的電流作恒流處理的思路,從而簡化了對熱模型溫度的求解。4、針對過渡區(qū)局部過熱現(xiàn)象,結(jié)合現(xiàn)有工藝平臺,提出了一款RC-IGBT終端結(jié)構(gòu)方案,經(jīng)優(yōu)化后該結(jié)構(gòu)可以顯著緩解過渡區(qū)局部的電流集中從而有效改善熱應(yīng)力過大的影響,為下一步的流片驗證提供理論與技術(shù)支持。
[Abstract]:At present, gate controlled power devices as mainstream power switch devices are widely used in electromagnetic heating, locomotive traction. MOSFET (Metal oxide Semiconductor Field effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are the two main devices of gate controlled power devices. Its development represents the mainstream direction of power device development. However, with the development of gate controlled power semiconductor devices towards higher power and higher frequency direction. Many failure modes are also highlighted in application, one of which is the overcurrent turn-off failure in the transition region of gate controlled power devices under inductive load. In this paper, based on the research of foreign related papers, combined with simulation analysis, overcurrent failure in transition zone is studied more deeply. Another purpose is to attract the attention of domestic enterprises and research institutions on the reliability of power devices. The work of this paper includes the following aspects: 1, first of all, with the help of TCAD software. The thermal failure of the transition region of the gate controlled power device during the process of overcurrent turn-off under inductive load is determined by simulation, and the physical parameters such as current in the transition region during the turn-off process are discussed in detail. The dynamic change of voltage and temperature. 2. From the physical level of the device, the cause of overcurrent failure during the process of switching off the inductive load in the transition zone is revealed. Based on the analysis of temperature rise and dynamic avalanche caused by local current accumulation in the transition zone, a two-dimensional heat conduction model for the transition region during the process of overcurrent turn-off is proposed. Through the analysis, the idea of the constant current treatment of the current in the transition zone in the rising stage of temperature rise is obtained, which simplifies the solution of the temperature of the thermal model .4. aiming at the local overheating phenomenon in the transition zone, combined with the existing process platform. A scheme of RC-IGBT terminal structure is proposed. After optimization, the local current concentration in the transition region can be significantly alleviated, and the effect of excessive thermal stress can be effectively improved. Provide theoretical and technical support for the next step of flow verification.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN322.8

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本文編號：1468409