發(fā)布時(shí)間：2018-01-24 11:50

  本文關(guān)鍵詞： GaN耿氏二極管 AlGaN電子發(fā)射層 超晶格　出處：《西安電子科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：太赫茲技術(shù)是近些年來高速發(fā)展的新興學(xué)科,是一個(gè)國(guó)家競(jìng)爭(zhēng)力和綜合實(shí)力的重要表現(xiàn),具有廣泛的應(yīng)用前景,其中關(guān)于半導(dǎo)體太赫茲固態(tài)源的研究尤其重要。與傳統(tǒng)III-V半導(dǎo)體材料相比,GaN具有禁帶寬度大、二維電子氣濃度高、子帶間電子散射快等優(yōu)點(diǎn),因此在毫米波大功率電子器件領(lǐng)域受到了廣泛的關(guān)注。目前比較成熟的耿氏二極管結(jié)構(gòu)有:n+/n-/n+結(jié)構(gòu)、凹槽摻雜結(jié)構(gòu)以及基于AlGaN電子發(fā)射層結(jié)構(gòu)等等,其中AlGaN電子發(fā)射層的引入是為了發(fā)射熱電子。為了進(jìn)一步減小耿氏器件“死區(qū)”長(zhǎng)度,同時(shí)減小AlGaN/GaN異質(zhì)結(jié)中的晶格失配程度,我們進(jìn)行了耿氏器件的新結(jié)構(gòu)研究,提出了基于AlGaN/GaN超晶格結(jié)構(gòu)的電子發(fā)射層、雙漸變AlGaN電子發(fā)射層以及在歐姆層中加入AlGaN插入層的新結(jié)構(gòu)。并通過仿真實(shí)驗(yàn)對(duì)器件結(jié)構(gòu)的合理性進(jìn)行驗(yàn)證,同時(shí)提取相關(guān)電學(xué)參數(shù),說明改進(jìn)后的器件結(jié)構(gòu)所具有的優(yōu)勢(shì)。首先,本文提出了AlGaN/GaN超晶格結(jié)構(gòu)作為耿氏器件的高能熱電子發(fā)射層。先通過仿真實(shí)驗(yàn)選取了合適的直流工作點(diǎn),從而得到了穩(wěn)定的自激振蕩波形,驗(yàn)證了結(jié)構(gòu)設(shè)計(jì)的合理性。之后又研究了超晶格周期數(shù)目以及偏置電壓對(duì)于器件的影響,得到了超晶格周期和偏置電壓對(duì)于器件電特性影響的一般規(guī)律,最后根據(jù)耿氏器件內(nèi)的電場(chǎng)分布圖像對(duì)結(jié)論進(jìn)行了解釋和說明。其次,在AlGaN/GaN異質(zhì)結(jié)理論的基礎(chǔ)上,針對(duì)單漸變Al組分AlGaN電子發(fā)射層中的問題,本文提出了雙漸變Al組分的AlGaN電子發(fā)射層的優(yōu)化方案。本文先通過伏安特性曲線確定了直流工作點(diǎn),得到穩(wěn)定波形,再利用快速傅里葉變換提取了相關(guān)參數(shù),對(duì)比了雙漸變Al組分結(jié)構(gòu)與單漸變Al組分電子發(fā)射層結(jié)構(gòu)之間的區(qū)別。從而驗(yàn)證了設(shè)計(jì)的合理性并說明了新結(jié)構(gòu)的優(yōu)點(diǎn)。最后,針對(duì)Notch摻雜結(jié)構(gòu)GaN耿氏二極管中的問題,本文提出了新的優(yōu)化方案:在GaN耿氏二極管的歐姆接觸層中加入AlGaN插入層。首先說明的設(shè)計(jì)的思想,接著對(duì)器件進(jìn)行了電學(xué)仿真,說明新結(jié)構(gòu)設(shè)計(jì)合理性,最后給出了一般的工藝制造流程圖。同時(shí)該結(jié)構(gòu)具有很強(qiáng)的移植性,能應(yīng)用于其他GaN太赫茲器件的研制中。
[Abstract]:Terahertz technology is a newly developed subject in recent years. It is an important manifestation of national competitiveness and comprehensive strength, and has a broad application prospect. The study of semiconductor terahertz solid source is especially important. Compared with traditional III-V semiconductor materials, gan has many advantages, such as wide band gap, high concentration of two-dimensional electron gas and fast electron scattering between subbands. Therefore, in the field of millimeter wave high power electronic devices, wide attention has been paid. At present, the more mature Geng diode structure has a structure of: n / n / n / n. Groove-doped structure and based on AlGaN electron emission layer structure, where AlGaN electron emission layer is introduced to emit hot electrons, in order to further reduce the Gunn device "dead zone" length. At the same time, the lattice mismatch degree in AlGaN/GaN heterojunction is reduced. We study the new structure of Geng device and propose the electron emitter layer based on AlGaN/GaN superlattice structure. The new structure of double gradient AlGaN electron emission layer and AlGaN insertion layer is added to the ohmic layer. The rationality of the device structure is verified by simulation experiments, and the relevant electrical parameters are extracted at the same time. The advantages of the improved device structure are explained. First of all. In this paper, the AlGaN/GaN superlattice structure is proposed as the high-energy thermionic emission layer of Geng device. First, the suitable DC operating point is selected through the simulation experiment, and the stable self-excited oscillation waveform is obtained. The rationality of the structure design is verified. Then the influence of the number of superlattice cycles and the bias voltage on the device is studied, and the general law of the influence of the superlattice period and bias voltage on the electrical characteristics of the device is obtained. Finally, the conclusion is explained and explained according to the electric field distribution image in Geng device. Secondly, based on the AlGaN/GaN heterojunction theory. Aiming at the problem in the electron emitter layer of single graded Al component AlGaN. In this paper, the optimization scheme of AlGaN electron emission layer with double graded Al component is proposed. In this paper, the DC operating point is determined by volt-ampere characteristic curve, and the stable waveform is obtained. Then the parameters are extracted by fast Fourier transform. The differences between the double graded Al component structure and the single gradient Al component electron emitter structure are compared. The rationality of the design and the advantages of the new structure are verified. Finally, the advantages of the new structure are demonstrated. Aim at the problem of Notch doped GaN Gunn diode. In this paper, a new optimization scheme is proposed: AlGaN insertion layer is added to the ohmic contact layer of GaN Gunn diode. First, the design idea is explained, and then the electrical simulation of the device is carried out. The rationality of the new structure design is explained, and the general process flow chart is given at the end of the paper. At the same time, the new structure has strong portability and can be used in the development of other GaN terahertz devices.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN31

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 郭炳輝;;耿氏二極管阻抗新的測(cè)量方法[J];微電子學(xué);1973年04期

2 В.И.КроТОВ;А.Н.ЛеВТероВ;張少時(shí);唐恒清;;帶有圓盤諧振器的耿氏二極管諧波自激振蕩器[J];現(xiàn)代雷達(dá);1991年04期

3 黃善祥;一種生長(zhǎng)多層InP材料的新技術(shù)[J];固體電子學(xué)研究與進(jìn)展;1982年03期

4 余叔涵;耿氏管自差機(jī)的工作原理[J];現(xiàn)代引信;1990年01期

5 孫再吉;;K波段耿氏二極管高次諧波振蕩器的開發(fā)[J];半導(dǎo)體信息;2010年03期

6 白陽(yáng);賈銳;金智;劉新宇;武德起;;基于耿氏效應(yīng)的太赫茲器件的研究進(jìn)展[J];太赫茲科學(xué)與電子信息學(xué)報(bào);2013年02期

7 彭宗樓;;K_a波段2GH_z電調(diào)諧VCO[J];無(wú)線電工程;1983年03期

8 ; 半導(dǎo)體器件[J];電子科技文摘;2000年03期

9 楊翠新;;作為自激混頻器和變負(fù)荷檢波器的帶移動(dòng)的反射器的耿氏二極管振蕩器的特性[J];制導(dǎo)與引信;1981年01期

10 楊翠新;;Ku波段微波頭[J];制導(dǎo)與引信;1992年04期

相關(guān)會(huì)議論文 前1條

1 高兆豐;高金環(huán);徐立生;張士芬;;耿氏二極管的幾種失效模式及其機(jī)理分析[A];2007'第十二屆全國(guó)可靠性物理學(xué)術(shù)討論會(huì)論文集[C];2007年

相關(guān)碩士學(xué)位論文 前9條

1 許詳;GaN基太赫茲耿氏二極管新結(jié)構(gòu)研究[D];西安電子科技大學(xué);2015年

2 龍雙;新型氮化銦基太赫茲耿氏二極管研究[D];西安電子科技大學(xué);2013年

3 毛偉;氮化鎵太赫茲耿氏器件外延生長(zhǎng)研究[D];西安電子科技大學(xué);2013年

4 黃光龍;基于SIW技術(shù)的Ka波段振蕩源的研究[D];電子科技大學(xué);2009年

5 王中旭;GaN微波及THz功率器件設(shè)計(jì)與工藝研究[D];西安電子科技大學(xué);2010年

6 黃永宏;基于能量平衡模型的GaN太赫茲耿氏二極管特性研究[D];西安電子科技大學(xué);2014年

7 張旭虎;GaN耿氏二極管及振蕩器設(shè)計(jì)[D];西安電子科技大學(xué);2011年

8 楊珊珊;高頻InP基耿氏二極管的工藝研究[D];寧夏大學(xué);2014年

9 姚慧;THz波段GaN耿氏二極管非線性模型及振蕩器研究[D];西安電子科技大學(xué);2014年

，

本文編號(hào)：1459979