本文關(guān)鍵詞： 環(huán)形振蕩器 壓控振蕩器 溫度補(bǔ)償 工藝補(bǔ)償 最小二乘法　出處：《東南大學(xué)》2017年碩士論文　論文類(lèi)型：學(xué)位論文

【摘要】：振蕩器自問(wèn)世以來(lái),應(yīng)用的范圍就不斷得到擴(kuò)展。隨著科技的進(jìn)步和人們生活方式的變化,不斷出現(xiàn)的新應(yīng)用對(duì)電路中振蕩器的性能要求也越來(lái)越高,所以國(guó)內(nèi)外的學(xué)者們對(duì)它的研究從來(lái)都沒(méi)有停止過(guò)——因?yàn)橐环N振蕩器如果在某方面具有優(yōu)勢(shì),那么在另一方面則難免帶有這樣那樣的問(wèn)題,"魚(yú)"和"熊掌"不可得兼。具體說(shuō)來(lái),LC振蕩器頻率穩(wěn)定,占用的芯片面積卻很大,功耗也比較高(如幾十μA的工作電流);晶體振蕩器雖然能夠提供較為理想的振蕩源,卻無(wú)法用標(biāo)準(zhǔn)的CMOS工藝集成到芯片內(nèi),即使采用MEMS工藝技術(shù)集成到芯片內(nèi)部,也因高昂的成本而無(wú)法成為客戶的首選。因此,一種集成度高、功耗低、頻率穩(wěn)定、成本也低的振蕩器一直是許多電路設(shè)計(jì)者們不懈努力的方向和目標(biāo)�；谝陨线@幾個(gè)方面的考慮,本文對(duì)CMOS反相器級(jí)聯(lián)而成的簡(jiǎn)單環(huán)形振蕩器進(jìn)行了溫度和工藝的雙重補(bǔ)償。在這種補(bǔ)償?shù)倪^(guò)程中主要做了三項(xiàng)關(guān)鍵性的工作:(1)研究環(huán)形振蕩器的頻率溫度特性和壓控特性。頻率溫度特性是指環(huán)形振蕩器在控制電壓(即電源電壓)一定的時(shí)候,其輸出頻率隨溫度的變化以及受工藝隨機(jī)偏差影響的情況,而壓控特性則是指在環(huán)形振蕩器輸出頻率保持恒定的條件下,其控制電壓應(yīng)該隨溫度和工藝偏差做如何變化,這時(shí)環(huán)形振蕩器就不言而喻地被當(dāng)作壓控振蕩器來(lái)處理了。(2)分析了 MOS器件關(guān)鍵參數(shù)和BJT(雙極型晶體管)基射極電壓(集電極電流一定的條件下)隨溫度和工藝的變化情況,在此基礎(chǔ)上設(shè)計(jì)了適當(dāng)?shù)难a(bǔ)償電壓產(chǎn)生電路。(3)運(yùn)用最小二乘法的原理,將不同的補(bǔ)償電壓以合適的系數(shù)進(jìn)行線性組合,由此構(gòu)成的電壓在相當(dāng)大的程度上接近環(huán)形振蕩器的壓控特性,由此達(dá)到對(duì)環(huán)形振蕩器進(jìn)行溫度和工藝雙重補(bǔ)償?shù)哪康摹１疚牡某晒獛в袦囟群凸に囯p重補(bǔ)償?shù)沫h(huán)形振蕩器,在不同的工藝角和溫度組合下,最大頻率偏差為1.5%(前仿真結(jié)果)和1.7%(后仿真結(jié)果),而在tt工藝角和-20℃到80℃的溫度區(qū)間內(nèi),頻率偏差僅有3‰,工作電流在400·600μA范圍內(nèi)(常溫下為520μA左右)。整個(gè)電路基于SMIC 0.18μm混合信號(hào)CMOS工藝,在Cadence平臺(tái)上進(jìn)行設(shè)計(jì)、前仿真、版圖設(shè)計(jì)和后仿真驗(yàn)證通過(guò)。
[Abstract]:With the development of science and technology and the change of people's way of life, the new applications are demanding the performance of the oscillator in the circuit more and more. So scholars at home and abroad have never stopped studying it-because if a kind of oscillator has an advantage in a certain aspect, then on the other hand it will inevitably have one kind of problem or another. "Fish" and "bear paw" are not available. Specifically, the LC oscillator has stable frequency, large chip area and high power consumption (such as tens of 渭 A operating current); Although the crystal oscillator can provide an ideal oscillator source, it can not be integrated into the chip by standard CMOS process, even if it is integrated into the chip using MEMS technology. Because of the high cost, it can not be the first choice of customers. Therefore, a kind of high integration, low power consumption, frequency stability. Low cost oscillator has been the direction and goal of many circuit designers. Based on these considerations. In this paper, the temperature and process of the simple ring oscillator cascaded by CMOS inverter are compensated. In the process of this compensation, three key tasks are done: 1). The frequency and temperature characteristics of the ring oscillator are studied. The frequency temperature characteristic is when the voltage of the ring oscillator is controlled (that is, the voltage of the power supply) is fixed. The output frequency varies with the temperature and is affected by the random deviation of the process, while the voltage control characteristic refers to the condition that the output frequency of the ring oscillator remains constant. The control voltage should vary with temperature and process deviation. The ring oscillator is automatically treated as a voltage-controlled oscillator. The key parameters of the MOS device and the basic emitter voltage of the BJT (bipolar transistor) are analyzed. The change of collector current with temperature and process. On this basis, a suitable compensation voltage generation circuit is designed. Using the principle of least square method, different compensation voltages are linearly combined with appropriate coefficients. The resulting voltage is close to the voltage control characteristics of the ring oscillator to a considerable extent. Thus the purpose of double compensation for temperature and process of ring oscillator is achieved. In this paper, the ring oscillator with double compensation of temperature and process is obtained under different process angles and temperature combinations. The maximum frequency deviation is 1.5 and 1.7 respectively, but in the TT process angle and the temperature range from -20 鈩，

本文編號(hào)：1455942