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  本文關(guān)鍵詞： 碳源濃度 生長溫度 晶體取向 壓電薄膜　出處：《河北工業(yè)大學》2015年碩士論文　論文類型：學位論文

【摘要】：本文主要研究熱絲化學氣相淀積(HFCVD)的實驗操作以及其工藝參數(shù)對金剛石薄膜生長的影響。在此基礎(chǔ)上,采用磁控濺射法進行ZnO薄膜的生長并分析實驗參數(shù)的影響。整體分析ZnO/Diamond/Si多層膜的表面形貌、取向以及電學性能,討論了其作為SAW器件基礎(chǔ)薄膜的可能性。得到結(jié)論如下:1、碳源濃度和生長溫度是影響金剛石薄膜生長的最主要因素。在碳源濃度逐漸增大的時,沉積速率也隨著增大,但當碳源濃度過大時,金剛石薄膜表現(xiàn)在sp3含量上的品質(zhì)卻越來越差,膜層中石墨的含量顯著增大;生長溫度較低時,形核小且慢,薄膜生長較慢,生長溫度過高會使得形核過快造成薄膜生長的不均勻,甚至出現(xiàn)硅基體表面的熔融現(xiàn)象。2、碳源濃度影響金剛石薄膜生長的取向:低碳源濃度時,熱力學作用明顯,(111)面比(100)面生長速率高;高碳源濃度時,動力學作用明顯,(100)面比(111)面生長速率高。3、磁控濺射法生長ZnO薄膜的影響因素主要有以下幾個:襯底溫度主要影響ZnO薄膜生長的c軸取向與表面粗糙度;濺射功率主要影響ZnO薄膜生長的取向與生長速率;濺射壓強和氬氧比主要是通過影響濺射粒子的數(shù)目和自由程等對薄膜的生長厚度產(chǎn)生影響。4、最終制備獲得了質(zhì)量較好的ZnO/Diamond/Si多層膜。金剛石膜的厚度和粗糙度能夠滿足聲表面波傳輸?shù)男阅芤蟆＝?jīng)霍爾測試,ZnO層電阻率接近109?,其壓電性能滿足聲表面波器件的性能要求。
[Abstract]:In this paper, the experimental operation of hot filament chemical vapor deposition (HFCVD) and the influence of its technological parameters on the growth of diamond films are studied. The ZnO films were grown by magnetron sputtering and the influence of experimental parameters was analyzed. The surface morphology, orientation and electrical properties of ZnO/Diamond/Si multilayers were analyzed. It is concluded that the concentration of carbon source and the growth temperature are the most important factors affecting the growth of diamond films. When the concentration of carbon source increases gradually. The deposition rate also increases, but when the concentration of carbon source is too high, the quality of diamond film on the content of sp3 becomes worse and worse, and the content of graphite in the film increases significantly. When the growth temperature is low, the nucleation is small and slow, the film growth is slow, the growth temperature is too high, the growth of the film will be uneven, and even the melting phenomenon of silicon substrate surface will occur. 2. The orientation of diamond films was influenced by the concentration of carbon source. When the concentration of carbon source was low, the growth rate of diamond films was higher than that of 100). When the concentration of carbon source is high, the growth rate of Kinetic effect is obviously higher than that of C111) surface. The main factors affecting the growth of ZnO thin films by magnetron sputtering are as follows: substrate temperature mainly affects the c-axis orientation and surface roughness of ZnO films; Sputtering power mainly affects the orientation and growth rate of ZnO films. The sputtering pressure and the ratio of argon to oxygen mainly affect the thickness of the films by influencing the number and free path of the sputtering particles. Finally, ZnO/Diamond/Si multilayer films with good quality were prepared. The thickness and roughness of diamond films can meet the performance requirements of saw transmission. The resistivity of ZnO layer is close to 109? Its piezoelectric properties meet the performance requirements of saw devices.
【學位授予單位】：河北工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN65

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相關(guān)期刊論文 前2條

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本文編號：1453251