硅基太赫茲波導(dǎo)定向耦合器的設(shè)計(jì)及制備
發(fā)布時(shí)間:2018-01-21 01:42
本文關(guān)鍵詞: 定向耦合器 太赫茲 MEMS 深硅刻蝕 超寬帶 出處:《中北大學(xué)》2017年碩士論文 論文類型:學(xué)位論文
【摘要】:太赫茲定向耦合器作為可以實(shí)現(xiàn)定向功率分配的關(guān)鍵無源器件,在微波、毫米波以及通信領(lǐng)域具有廣泛的應(yīng)用。亞毫米波波導(dǎo)型器件和平面?zhèn)鬏斁器件相比,具有較低的損耗,更高的功率處理能力,且易于與測(cè)量系統(tǒng)和其他固態(tài)系統(tǒng)互連的優(yōu)點(diǎn),成為國(guó)內(nèi)外探究的熱點(diǎn)。本文通過對(duì)波導(dǎo)定向耦合器進(jìn)行探索研究,設(shè)計(jì)出一種結(jié)構(gòu)緊湊、超寬帶、耦合強(qiáng)、高方向性的太赫茲波導(dǎo)定向耦合器,并利用MEMS工藝完成了加工。在總結(jié)國(guó)內(nèi)外波導(dǎo)結(jié)構(gòu)以及波導(dǎo)定向耦合器研究和發(fā)展趨勢(shì)的基礎(chǔ)上,從定向耦合器的設(shè)計(jì)理論出發(fā),利用上、下排列的波導(dǎo)之間的多個(gè)耦合孔來實(shí)現(xiàn)功率分配,通過軟件HFSS進(jìn)行模擬仿真,設(shè)計(jì)出了中心頻率為400 GHz,帶寬為150 GHz的太赫茲多孔耦合型波導(dǎo)定向耦合器,耦合孔有“十字形”和“三角形”兩種,仿真曲線可以看出該結(jié)構(gòu)具備良好的傳輸性能?紤]到測(cè)試系統(tǒng)的連接方式,設(shè)計(jì)了三種拓?fù)浣Y(jié)構(gòu)分別對(duì)應(yīng)測(cè)試的三個(gè)參數(shù):耦合度、回波損耗、隔離度。以高阻硅為結(jié)構(gòu)材料,基于深硅刻蝕工藝和鍵合工藝完成了太赫茲波導(dǎo)定向耦合器的加工,并利用磁控濺射和微電鍍實(shí)現(xiàn)了波導(dǎo)定向耦合器的金屬化。定向耦合器封裝于以硅為材料,尺寸為6 mm×6 mm×1.36 mm的單元中,設(shè)計(jì)了定向耦合器的配套夾具來進(jìn)行測(cè)試,測(cè)試和仿真結(jié)果基本一致。本文成功完成了太赫茲波導(dǎo)定向耦合器的設(shè)計(jì)和制備,突破了傳統(tǒng)波導(dǎo)定向耦合器兩波導(dǎo)處于同一平面內(nèi)的局限,利用多個(gè)小孔耦合的形式,提高了定向耦合器的工作帶寬和方向性,對(duì)后續(xù)太赫茲系統(tǒng)的探討和發(fā)展具有重大意義。
[Abstract]:Terahertz directional coupler, as a key passive device to realize directional power distribution, has been widely used in microwave, millimeter wave and communication fields, compared with submillimeter wave waveguide device and planar transmission line device. With the advantages of low loss, higher power processing capability and easy interconnection with measurement systems and other solid-state systems, it has become a hot topic at home and abroad. In this paper, waveguide directional couplers are studied. A compact ultra-wideband (UWB) THz waveguide directional coupler with strong coupling and high directivity is designed. On the basis of summarizing the research and development trend of waveguide structure and waveguide directional coupler at home and abroad, this paper starts from the design theory of directional coupler and makes use of it. The power distribution is realized by several coupling holes between the waveguides arranged in the bottom. The center frequency is designed to be 400 GHz through the simulation of software HFSS. THz porous waveguide directional coupler with a bandwidth of 150 GHz has two kinds of coupling holes: "cross" and "triangle". The simulation curve shows that the structure has good transmission performance. Considering the connection mode of the test system, three topologies are designed to correspond to the three parameters of the test: coupling degree, echo loss. Isolation. Based on deep silicon etching and bonding process, the THz waveguide directional coupler is fabricated using high resistance silicon as the structure material. The metallization of waveguide directional coupler is realized by magnetron sputtering and micro-electroplating. The directional coupler is encapsulated in a cell of 6 mm 脳 6 mm 脳 1.36 mm in size. The matching fixture of the directional coupler is designed for testing, and the test results are basically consistent with the simulation results. In this paper, the design and fabrication of the THz waveguide directional coupler are successfully completed. It breaks through the limitation that two waveguides of traditional waveguide directional coupler are in the same plane, and improves the working bandwidth and directivity of directional coupler by using multi-hole coupling. It is of great significance for the discussion and development of terahertz system.
【學(xué)位授予單位】:中北大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2017
【分類號(hào)】:TN622.2
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