本文關(guān)鍵詞：低溫生長(zhǎng)砷化鎵的超快光抽運(yùn)-太赫茲探測(cè)光譜　出處：《物理學(xué)報(bào)》2017年08期 　論文類(lèi)型：期刊論文

  更多相關(guān)文章： 低溫生長(zhǎng)砷化鎵 超快太赫茲光譜 光電導(dǎo)

【摘要】：本文采用光抽運(yùn)-太赫茲探測(cè)技術(shù)系統(tǒng)研究了低溫生長(zhǎng)砷化鎵(LT-GaAs)中光生載流子的超快動(dòng)力學(xué)過(guò)程.光激發(fā)LT-GaAs薄層電導(dǎo)率峰值隨抽運(yùn)光強(qiáng)增加而增加,最后達(dá)到飽和,其飽和功率為54μJ/cm~2.當(dāng)載流子濃度增大時(shí),電子間的庫(kù)侖相互作用將部分屏蔽缺陷對(duì)電子的俘獲概率,從而導(dǎo)致LT-GaAs的快速載流子俘獲時(shí)間隨抽運(yùn)光強(qiáng)增加而變長(zhǎng).光激發(fā)薄層電導(dǎo)率的色散關(guān)系可以用Cole-Cole Drude模型很好地?cái)M合,結(jié)果表明LT-GaAs內(nèi)部載流子的散射時(shí)間隨抽運(yùn)光強(qiáng)增加和延遲時(shí)間(產(chǎn)生光和抽運(yùn)光)變長(zhǎng)而增加,主要來(lái)源于電子-電子散射以及電子-雜質(zhì)缺陷散射共同貢獻(xiàn),其中電子-雜質(zhì)缺陷散射的強(qiáng)度與光激發(fā)薄層載流子濃度密切相關(guān),并可由散射時(shí)間分布函數(shù)α來(lái)描述.通過(guò)對(duì)光激發(fā)載流子動(dòng)力學(xué)、光激發(fā)薄層電導(dǎo)率以及遷移率變化的研究,我們提出適當(dāng)增加缺陷濃度,可以進(jìn)一步降低載流子遷移率和壽命,為研制和設(shè)計(jì)優(yōu)良的THz發(fā)射器提供了實(shí)驗(yàn)依據(jù).
[Abstract]:The low temperature growth of Gallium arsenide (LT-GaAs) has been studied by optically pumped terahertz (THz) technique. Ultrafast kinetic process of mesophotogenic carriers. The peak conductivity of photoexcited LT-GaAs thin layer increases with the increase of pump light intensity. Finally, the saturation power is 54 渭 J / cm ~ (-2). When the carrier concentration increases, the Coulomb interaction between electrons will lead to the capture probability of partially shielded defects. As a result, the fast carrier trapping time of LT-GaAs increases with the increase of pump intensity. The dispersion relation of conductivity of photoexcited thin layer can be obtained by Cole-Cole. The Drude model fits well. The results show that the carrier scattering time increases with the increase of the pump intensity and the delay time (producing light and pumping light). The main contributions are electron-electron scattering and electron-impurity defect scattering. The intensity of electron-impurity defect scattering is closely related to the carrier concentration of photoexcited thin layer. It can be described by the scattering time distribution function 偽. By studying the photoexcited carrier dynamics, the conductivity of photoexcited thin layer and the change of mobility, we propose to increase the defect concentration appropriately. The mobility and lifetime of carriers can be further reduced, which provides experimental basis for the development and design of excellent THz emitters.
【作者單位】： 上海大學(xué)物理系;中國(guó)科學(xué)院上海微系統(tǒng)與信息技術(shù)研究所中國(guó)科學(xué)院太赫茲固態(tài)技術(shù)重點(diǎn)實(shí)驗(yàn)室;
【基金】：國(guó)家自然科學(xué)基金(批準(zhǔn)號(hào):11674213,11604202,61405233) 國(guó)家重大科學(xué)儀器設(shè)備開(kāi)發(fā)專(zhuān)項(xiàng)(批準(zhǔn)號(hào):2011YQ150021) 上海市教委重點(diǎn)課題(批準(zhǔn)號(hào):14ZZ101)資助的課題~~
【分類(lèi)號(hào)】：TN304.23
【正文快照】： 壓.LT-GaAs是最常用的光電導(dǎo)材料.通過(guò)低溫條1引言 件下(約300 K)生長(zhǎng)的GaAs,會(huì)引入大量的缺陷,, __ 、 從而形成載流子的俘獲陷阱或復(fù)合中心.LT-GaAs低溫生長(zhǎng)砷化鎵(LT'GaAs)具有尚載流子S中主要存在兩種載流子俘獲機(jī)制:在缺陷俘獲模型移率和快載流子俘獲速率以及高暗電阻率

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