本文關(guān)鍵詞：輻照對遠紅外和紫外波段光學(xué)材料的影響　出處：《電子科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 離子注入 Si基材料 光學(xué)性質(zhì) 表面形貌

【摘要】：單晶Si是一種重要的半導(dǎo)體器件材料,在器件研發(fā)方面極具潛力。本文通過離子注入的方法分別對單晶Si進行He離子和N離子摻雜,通過Co60γ射線輻射源輻照單晶Si,利用磁控濺射法在Si表面鍍不同厚度的Ag膜,研究處理樣品表面的形貌和光學(xué)性質(zhì)變化。本論文的實驗結(jié)果可為研究高注量摻雜Si后樣品的光學(xué)性質(zhì)及其物理機制提供數(shù)據(jù)。主要的結(jié)論如下:(1)研究了He離子摻雜對單晶Si的影響。研究發(fā)現(xiàn),在整個測試溫區(qū)內(nèi)(145K至520K),隨著摻He濃度增加,樣品的吸收系數(shù)逐漸增大,折射率逐漸減小。所有樣品的吸收系數(shù)和折射率隨溫度的變化趨勢是一致的。其中折射率在整個測試波段內(nèi)隨溫度的升高而增大。但吸收系數(shù)在不同波段呈現(xiàn)不同趨勢,當波數(shù)小于12cm-1時,吸收系數(shù)隨溫度的升高而減小;波數(shù)大于30cm-1時,吸收系數(shù)隨著溫度的升高而增大,運用Drude模型對兩組曲線進行了模擬計算,模擬曲線與實驗曲線吻合較好。原子力顯微鏡分析表明隨著注量的增加,樣品表面粗糙度增大,當注量達到2.0×1017cm-2時,表面有明顯的隆起。光學(xué)顯微鏡結(jié)果表明當注量達到4.0×1017cm-2時表面有剝落現(xiàn)象產(chǎn)生。隨著注量增加,樣品的吸收增強,發(fā)光強度增大,He泡數(shù)明顯增多,并且在注量為1×1017cm-2時,出現(xiàn)新的發(fā)光峰,分別位于360nm、407nm、537nm、600nm處。(2)研究了不同膜厚的Ag膜對單晶Si的影響。研究發(fā)現(xiàn),隨著膜厚的增加,樣品表面粗糙度增加,顆粒增大,吸收系數(shù)增大。(3)研究了N離子摻雜對單晶Si和SiO2/Si的影響。研究發(fā)現(xiàn),隨著注量的增加,Si樣品的透射率、吸收系數(shù)、折射率和介電常數(shù)沒有明顯的變化,表面粗糙度增大,SiO2/Si樣品的透射率沒有明顯的變化,表面粗糙度先減小后增加。(4)研究了不同劑量的γ射線對單晶Si和SiO2/Si的影響。研究發(fā)現(xiàn),隨著劑量的增加,Si樣品表面損傷越來越嚴重,吸收增強,發(fā)光強度增大,但并未出現(xiàn)新的發(fā)光峰,SiO2/Si樣品表面損傷越來越嚴重,折射率變化不大,但平均膜厚卻變小了。
[Abstract]:Single crystal Si is an important semiconductor device material, which has great potential in the research and development of semiconductor devices. In this paper, single crystal Si is doped with he and N ions by ion implantation. Single crystal Si was irradiated by Co60 緯 -ray radiation source, and Ag films of different thickness were deposited on Si surface by magnetron sputtering. The experimental results of this paper can provide data for the study of the optical properties and physical mechanism of the samples doped with Si with high Fluence. The main conclusions are as follows: 1). The effect of he doping on single crystal Si was investigated. In the whole temperature range of 145K to 520K, the absorption coefficient of the samples increases with the increase of He-doped concentration. The absorption coefficient and refractive index of all samples are consistent with the change of temperature. The refractive index increases with the increase of temperature in the whole testing band, but the absorption coefficient does not appear in different bands. Same trend. When the wave number is less than 12cm-1, the absorption coefficient decreases with the increase of temperature. When the wave number is more than 30 cm ~ (-1), the absorption coefficient increases with the increase of temperature. The Drude model is used to simulate the two sets of curves. The atomic force microscope analysis shows that the surface roughness of the sample increases with the increase of flux, and when the flux reaches 2.0 脳 1017cm-2, the simulated curve is in good agreement with the experimental curve. The optical microscope results show that the surface spalling occurs when the flux reaches 4.0 脳 1017cm-2. With the increase of the flux, the absorption of the sample increases and the luminescence intensity increases. The number of he bubbles increased obviously, and at the flux of 1 脳 1017 cm ~ (-2), a new luminescence peak was observed, which was located at 360 nm ~ (17) nm ~ (407) nm, respectively. The influence of Ag films with different thickness on single crystal Si was studied. It was found that the surface roughness and particle size increased with the increase of film thickness. The influence of N ion doping on Si and SiO2/Si was investigated. It was found that the transmittance and absorption coefficient of Si samples increased with the increase of the flux. There is no obvious change in refractive index and dielectric constant, and there is no obvious change in the transmittance of SiO2 / Si sample with increasing surface roughness. The effects of different doses of 緯-ray on single crystal Si and SiO2/Si were studied. It was found that the surface damage of Si samples was more and more serious with the increase of dose. The absorption increases and the luminescence intensity increases, but there is no new peak, the surface damage of Sio _ 2 / Si sample becomes more and more serious, the refractive index changes little, but the average film thickness becomes smaller.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN305.3

【參考文獻】

相關(guān)期刊論文 前1條

1 陳吳玉婷;韓鵬昱;Lin Shawn-Yu;張希成;;具有緩變折射率的太赫茲寬帶增透器件[J];物理學(xué)報;2012年08期

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本文編號：1439739